TO-5 MICROSEMI Search Results

1N2828B

Abstract: ta 358
Contextual Info: Micmsemi Zener Regulator Diodes Microsemi Division Package Outline Type | Mil Data Power •Spec : Sheet ID j W I 4 DO-5 DO-5 TO-3 DO-5 TO-3 DO-5 TO-3 DO-5 TO-3 TO-3 DO-5 DO-5 TO-3 DO-5 TO-3 DO-5 TO-3 DO-5 TO-3 TO-3 DO-5 DO-5 TO-3 DO-5 TO-3 DO-5 TO-3 DO-5

IN939

Abstract: 1n4771 1N4770 1N4770A 1N4771A 1N4772 1N4772A 1N4773 1N4773A 1N943
Contextual Info: a> ro OUICK REFERENCE GUIDE MICROSEMI VOLTAGE REFERENCE TC DIODES Test Current l7T mA 62 62 75 ?5 DO-7/DO-35 DO-7/DO-35 6 3 75 DO-7 Operating Temperature Range, °C - 55 to * 100 - 5 5 to - 100 0.002%/°C 0.005% °C 0.01%/ C Case Type Type Number A VZ MV

CH5226

Abstract: ch5279 1N5221 1N5281 CH5221 CH5222 CH5223 CH5224 CH5225 CH5227
Contextual Info: Electrical characteristics at 2 5 °C unless otherwise specified. VOLTAGE REGULATOR PLANAR DIODE CHIPS GENERAL PURPOSE 2.4-200 VOLTS Electrically similar to the JEDEC 1 N 5 2 2 1 - 1N5281 MICROSEMI TYPE NO. Note 1 & 5 NOMINAL ZENER VOLTAGE V2 @ Izr (Note 2)

2EZ24D5

Abstract: 2EZ11D5 2EZ12D5 2EZ14D5 2EZ15D5 2EZ17D5 2EZ18D5 2EZ19D5 2EZ200D5 2EZ20D5
Contextual Info: I tt1 2 E Z 3 .6 D 5 THRU 2E Z 200D 5 *3K -3 Microsemi Corp. FEATURES SILICON 2 WATT ZEN ER DIODE <> ZENER VOLTAGE 3.6 to 200V •i HIGH SURGE CURRENT RATING . 2 WATTS DISSIPATION IN A NORMALLY 1 WATT PACKAGE M AXIM UM R A T IN G S Ju n ctio n and S to ra g e T e m p e ra tu re : -6 5 ° C to +150°C

04M0

Abstract: 1N4148 1n4148 die chip MSC1023
Contextual Info: 04M0 A Microsemi Company 580 Pleasant St. Watertown, MA 02472 Phone: 617-924-9280 Fax: 617-924-1235 DIE SPECIFICATION 100V 300mA MONOLITHIC DIODE ARRAY 5 FEATURES: • • • • INDIVIDUAL DIODES EQUIVALENT TO 1N4148 Vf MATCH TO 5 mV at 10 mA ULTRA-HIGH SPEED SWITCHING

u3g diode

Abstract: diode 227j UM-49 Unitrode Semiconductor diode u3g
Contextual Info: MICROSEMI CORP/ WATERTOWN 5DE » • TBMTTbB 001E3T0 Tbfl ■ U N I T PIN DIODE U M 4000SERIES UM4900 S E R IE S O 7 - f 5~~ Features • • • • Power dissipation to 37.5W Voltage ratings to 1000V Series resistance rated at 0.5Q Carrier lifetim e greater than 5/us

ZENER 6B5

Abstract: zener DIODE A112 3EZ13005 3EZ1305 3 Watt Zener Diode 6B5 diode 33-/zener DIODE A112 3EZ11D5 3EZ15D5 3EZ17D5
Contextual Info: ink-MM 3EZ3.9D 5 thru 3E Z 200D 5 Microsemi Corp. FEATURES SILICON 3 WATT ZENER DIODE • ZENER VOLTAGE 3.9V to 200V • HIGH SURGE CURRENT RATING • 3 WATTS DISSIPATION IN A NORMALLY 1 WATT PACKAGE M AXIM UM R A T IN G S Junction and Storage T em perature: -<>.7C to +150°C

in5349b

Abstract: IN5339B IN5378B IN5343b in5364B in5378b ZENER DIODE IN5358B IN5378 IN5339B diode IN5357B
Contextual Info: ITTIMK-J 1N5333B Microsemi Corp. 1N5388B th ru SILICON 5 WATT ZENER DIODE FEATURES • ZENER VOLTAGE 3.3V to 200V • HIGH SURGE CURRENT C A P A B IL IT Y • AVAILABLE IN ± 5, ± 10 or ± 2 0 % TOLERANCES Note 1 MAXIMUM RATINGS O perating T em perature: —65°C to + 2 0 0 °C

CH4099

Abstract: CH4624 CH4620 CH4621 CH4622 CH4623 CH4111 CH4105 CH41
Contextual Info: Electrical characteristics at VOLTAGE REGULATOR PLANAR DIODE CHIPS MICROSEMI TYPE NO. N ote 1 & 5 2 5 °C NOMINAL ZENER VOLTAGE VZ @ IZT unless otherw ise specified. ZENER TEST CURRENT IZT (N ote 2) VOLTS LOW CURRENT 1.8-100 VOLTS Electrically sim ilar to

C0811

Abstract: 1N2828B DIODE YV 950 zener 245 245 zener in4562b 1N2804 1N4557B 1N4558B 1N4559B
Contextual Info: 1 N 2 8 0 4 th ru 1NI2846B a nd 1 N 4 5 5 7 B th ru 1N4564B Microsemi Corp. FEATURES SILICO N 50 WATT Z E N E R D IO D E S • ZENER VOLTAGE 3.9V to 200V • AVAILABLE IN TOLERANCES OF ± 5 % , ± 1 0 % and ± 2 0 % • DESIGNED FOR MILITARY ENVIRONMENTS See Below

4552b

Abstract: 1N33
Contextual Info: 1N3305 thru 1N3350B and Microsemi Corp. ,h' SANTA ANA, CA SCOTTSDALE, A Z / F o r m o r e i n f o r m a ti o n c a ll: / 1 N 4 5 4 9 B thru -N 4 5 5 6 B • 602 94I-6300 FEATURES SILICON 50 WATT ZENER DIODES • ZENER VOLTAGE 3.9 TO 200V . LOW ZENER IMPEDANCE

Contextual Info: 1 N 5 7 2 8 thru Microsemi Corp. 1 N f The diode expens 5 7 5 7 S C O r rS D A L E , A l F of m ore inform ation call: 602 94I-630Ö FEATURES • ZENER VOLTAGE 4.7 TO 75 V SILICON 400 mW ZENER DIODES • SMALL RUGGEO DOUBLE SLUG CONSTRUCTION DO-35 • CONSTRUCTED WITH AN OXIDE PASSIVATED ALL OIFFUSED DIE

lx12945cdd

Abstract: LX12945 lx129 LX12945-CDD LX8684-XX LX12945C LX1294 Pb95 LX8384-00CDD lx8117
Contextual Info: PROCESS/PRODUCT CHANGE NOTIFICATION Integrated Products Subject: Pb-free or RoHS Transition of devices assembled in the 3 and 5 ld TO-263 DD packages. P.C.N. NO.: DATE: 064 12-Jun-2005 TO: (CUSTOMER CONTACT INFORMATION) MICROSEMI INTENDS TO MAKE A CHANGE IN OUR PROCESS/PRODUCT AND SEEK YOUR

in4783

Abstract: 1N4775 1N4775A 1N4776 1N4776A 1N4777 1N4777A 1N4778 1N4778A 1N4779
Contextual Info: JnV-k-'ll 1N4 7 7 5 thru 1N4 7 8 4 A Microsemi Corp. 8.5 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES FEATURES . ZENER VOLTAGE 8.5V See Note 3 . TEMPERATURE COEFFICIENT RANGE: 0.01 % / ° C to 0 .0 0 0 5 % / ° C ‘‘M A X I M U M R A T I N G S

1N5913

Abstract: 1N5915 1N5917 1N5943 1N5913B 1N5914 1N5916 1N5918 1N5919 1N5920
Contextual Info: rfnl^TM 1N5913B thru 1N5956B Microsemi Corp. FEATURES SILICON 1.5 WATT ZENER DIODE • ZENER VOLTAGE 3.3V to 200V • WITHSTAND LARGE SURGE STRESSES M AXIM UM R A T IN G S Junction and Storage: - 5 5 ° C t o + 2 0 0 °C DC Pow er Dissipation: 1.5 W att 12 m W / °C above 75 °C

IN456

Abstract: 1n3321 1N3320B 1N3341B
Contextual Info: 1N 3 3 05 thru 1N 3350B and Microsemi Corp. SANTA ANA, CA j /ri,*,*,«« SCOTTSDALE, AZ / For more information call: / 1N4549B thru iM A C K ftB • 5 5 0 B 602 941-6300 FE A T U R E S SILICON 50 WATT ZENER DIODES • ZENER VOLTAGE 3.9 TO 200V • LOW ZENER IMPEDANCE

2EZ1205

Contextual Info: 2 E Z 3 .6 D 5 TH R U 2EZ200D 5 Microsemi Corp. t«,< * SANTA ANA, CA 1 SCOTTSDALE, A Z For m ore inform ation call: 602 941-6300 FEATURES • ZENER VOLTAGE 3.6 to 200V SILICON 2 WATT ZENERDIODE • HIGH SURGE CURRENT RATING . 2 WATTS DISSIPATION IN A NORM ALLY 1 W ATT PACKAGE

Contextual Info: SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS UPT5 - UPT48 UPTB5 - UPTB48 fS m a m H T Package 5 to 48V, 1000 Watts Peak DESCRIPTION Microsemi's new Powermite UFT series of transient voltage suppressors feature oxide passivated zener type chips with high-tempenature solder bonds to achieve high surge

f7555

Abstract: 4062A 4072A 4063a 1N408 zener 2w 1n 4074a 40B1A
Contextual Info: 1N4057 thru 1N4085A Microsemi Corp. ' The âtoôe experts SANTA ANA, CA SCOTTSDALE, AZ 1 For more information call: 602 941-6300 FEATURES HIQH VOLTAGE TEMPERATURE COMPENSATED ZENER DIODES • ZENER V01TAGE 12.4V to 200V . TEMPERATURE COEFFICIENT RANGE: 0 .0 0 5 % /°C to 0.002% / ° C

in5338b

Abstract: in5338b Zener diode in5369b IN5338 in5333B IN5341 in5349b in53418 Zener diode in5347b IN5359b
Contextual Info: 1N 5333B thru 1N 5388B I Microsemi Corp. $ The diode experts SCOTTSDALE , AZ For more information call: 602 941-6300 SILICON 5 WATT ZENER DIODES FEATUR ES • ZENER VOLTAGE 3.3V to 200V • HIGH SURGE CURRENT CAPABILITY • FOR AVAILABLE TO LERANCES - SEE NOTE 1

brush dc motor control 200v 20a

Abstract: transformerless power supply circuit AC DC transformerless power supply apex pa26 5V power supply transformerless spice model of power TRANSFORMER liteon transformer AN35U full wave rectifier ripples APEX pa21
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 . * $ 3 0 5 & $ ) / 0 - 0 ( : INTRODUCTION High power PWM amplifiers are now available in the 200V to 500V range with current ratings in the 10A to 20A range.

1023P

Contextual Info: J E R ttW 04M0 LHB5 A Microsemi Company 580 Pleasant St. Watertown, MA 02472 Phone: 617-924-9280 Fax: 617-924-1235 DIE SPECIFICATION 100V 300mA MONOLITHIC DIODE ARRAY FEATURES: • INDIVIDUAL DIODES EQUIVALENT TO 1N4148 • Vf MATCH TO 5 mV at 10 mA • •

U101 Diode Zener

Abstract: 3EZ1505 3EZ10D5 3EZ11D5 3EZ12D5 3EZ13D5 3EZ14D5 3EZ16D5 3EZ17D5 3EZ18D5
Contextual Info: 3 EZ 3 .9 D 5 thru 3EZ200D 5 / Microsemi Corp. ? r ^e cJiOflp exppris / SCOTTSDALE. A Z / F o r m o r e i n f o r m a ti o n call: / 602 941-6100 SILICON 3 WATT ZENER DIODE FEATURES • ZENER VOLTAGE 3.9V to 200V • HIGH SURGE CURRENT RATING • 3 WATTS DISSIPATION IN A NORMALLY 1 WATT PACKAGE

1N4770

Abstract: 1N4770A 1N4771 1N4771A 1N4772 1N4772A 1N4773 1N4773A 1N4774 equivalent
Contextual Info: 1N4765 thru 1N 4774A MicrosemiCorp. 9 The diDfle expens / SANTA ANA, CA SCOTTSDALE, AZ / F o r m o re in fo rm a tio n call: 602 941-6300 9.1 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES FEATURES • ZEN ER VOLTAGE 9.1V ± 5 % • TEM PERATU RE CO EFFICIEN T RANGE: 0 .0 t% / °C TO 0 .0 0 0 5 % /°C