TO-218AA PACKAGE Search Results

GS 358

Abstract: BUZ357 BUZ54A BUZ54 BUZ 54 BUZ 140 L
Contextual Info: SIEMENS SIPMOS Power MOS Transistors BUZ 54 BUZ 54 A BUZ 357 BUZ 358 = 1000 V = 4.5 . 5.1 A ^DS on = 2.0 . . . 2.6 Q VDS l0 • N channel • Enhancement mode • Packages TO-204 AA (TO-3) TO-218AA (TOP-3)1) TO-204AA 54/54 A) G TO-218AA Type Ordering code

Contextual Info: SIEMENS BUZ 330 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 330 Vbs 500 V hi 9.5 A % S on Package Ordering Code 0.6 n TO-218AA C67078-S3105-A2 Maximum Ratings Parameter Symbol Continuous drain current Values

transistor D 2499

Abstract: transistor K D 2499 BUZ 82 BUZ345 transistor 2499
Contextual Info: SIEMENS BUZ 345 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 345 Vbs 100 V b 41 A flfasion 0.045 n Package Ordering Code TO-218AA C67078-S3121-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values

Contextual Info: BUZ 344 I nf ineon technologie» SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type ^DS to flDS on Package Ordering Code BUZ 344 100 V 50 A 0.035 n TO-218AA C67078-S3132-A2 Maximum Ratings Parameter Symbol Continuous drain current

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ332A CASE OUTLINE: TO-218AA HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ358 CASE OUTLINE: TO-218AA HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ334 CASE OUTLINE: TO-218AA HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:

t 326 Transistor

Abstract: transistor TE 901 BUZ 14
Contextual Info: SIEMENS BUZ 326 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 326 Yds 400 V Id 10.5 A RoSlon 0.5 a Package Ordering Code TO-218AA C67078-S3112-A2 Maximum Ratings Parameter Symbol Values Continuous drain current

Contextual Info: SIEMENS BUZ 347 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs BUZ 347 50 V h 45 A ^bs on Package Ordering Code 0.03 n TO-218AA C67078-S31 15-A2 Maximum Ratings Parameter Symbol Continuous drain current

D 346 transistor

Contextual Info: SIEMENS BUZ 346 S2 Not far new design SJPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 346 S2 Vbs 60 V b 58 A flbaon 0.018 n Package Ordering Code TO-218AA C67078-S3120-A4 Maximum Ratings Parameter Symbol Continuous drain current

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ357 CASE OUTLINE: TO-218AA HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:

BUZ312

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ312 CASE OUTLINE: TO-218AA HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:

ld 1088 bs

Abstract: k 1094 transistor 1/ld 1088 bs
Contextual Info: SIEMENS BUZ 380 SIPMOS Power Transistor • N channel • Enhancement mode • FREDFET Type BUZ 380 Vbs 1000 V 5.5 A ^bsfon 2w Package Ordering Code TO-218AA C67078-A3205-A2 Maximum Ratings Parameter Symbol Drain source voltage Vbs V DGR Drain-gate voltage

23 LM CT05

Abstract: buz341 MS3456W32-17PW L/Q2N5550
Contextual Info: SIEMENS BUZ 341 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vos BUZ 341 200 V 33 A fbsion 0.07 n Package Ordering Code TO-218AA C67078-S3128-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values Unit

Contextual Info: SIEMENS BUZ 355 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 355 Vbs 800 V Id ^DS on Package Ordering Code 6A 1.5 w TO-218AA C67078-S3107-A2 Maximum Ratings Parameter Symbol Continuous drain current Values Id

Contextual Info: SIEMENS BUZ 356 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 356 Vbs 800 V h ^DS on Package Ordering Code 5.3 A 2w TO-218AA C67078-S3108-A2 Maximum Ratings Parameter Symbol Continuous drain current Values Unit

STT 3 SIEMENS

Abstract: TRANSISTOR 2FE ScansUX7 C67078-A3209-A2
Contextual Info: SIEMENS BUZ 384 SIPMOS Power Transistor • N channel • Enhancement mode • FREDFET Type BUZ 384 Vds 500 V DS on 10.5 A 0.6 w Package Ordering Code TO-218AA C67078-A3209-A2 Maximum Ratings Parameter Symbol Drain source voltage ^DS V DGR Drain-gate voltage

Contextual Info: SIEMENS BUZ 384 SIPMOS Power Transistor • N channel • Enhancement mode • FR ED FET Type Vos BUZ 384 500 V 4> 10.5 A *bs on 0.6 w Package Ordering Code TO-218AA C67078-A3209-A2 Maximum Ratings Parameter Symbol Drain source voltage Vos Drain-gate voltage

BUZ 835

Contextual Info: SIEMENS BUZ 307 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated BUZ 307 CO Type 800 V b 3A ^bs on 3 Í1 Package Ordering Code TO-218AA C67078-S3100-A2 Maximum Ratings Parameter Symbol Continuous drain current Values b 7C = 35 °C

Contextual Info: SIEMENS TEMPFET BTS 240A Features • • • • N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Type VD, BTS 240A 50 V h 58 A ®D* on 0.018 a Package Ordering Code TO-218AA C67078-A5100-A3

BUZ 382

Contextual Info: SIEMENS BUZ 382 SIPMOS Power Transistor • N channel • Enhancement mode • FREDFET Type Vos b BUZ 382 400 V 12.5 A %S on 0.4 w Package Ordering Code TO-218AA C67078-A3207-A2 Maximum Ratings Parameter Symbol Drain source voltage Vds Drain-gate voltage

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ356 CASE OUTLINE: TO-218AA HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:

BUZ310

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ310 CASE OUTLINE: TO-218AA HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:

Contextual Info: SIEMENS TEMPFET BTS 240A Features • • • • N channei Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Type v DS h ^OS on Package Ordering Code BTS 240A 50 V 58 A 0.018 n TO-218AA C67078-A5100-A3