TO-126 HIGH SPEED SWITCHING TRANSISTOR Search Results

2SC2899

Contextual Info: SavantIC Semiconductor Product Specification 2SC2899 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·High voltage,high speed APPLICATIONS ·For high speed and high voltage switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector

kse13003

Contextual Info: KSE13003 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATIONS TO-126 • High Speed Switching • Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage Characteristic VCBO Symbol 700 V Collector-Emitter Voltage

transistor G11

Abstract: to-126 HIGH SPEED SWITCHING transistor g11 transistor NPN Transistor 10A 400V NPN Transistor 1A 400V to - 92 to-126 npn switching transistor 400v d 772 transistor
Contextual Info: TS13003 High Voltage NPN Transistor TO-92 TO-126 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCEO 400V BVCBO 700V IC 1.5A VCE SAT Features 1V @ IC =0.5A, IB =0.1A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type

NTE3312

Abstract: NTE331
Contextual Info: NTE3312 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified

NTE3311

Abstract: NTE331
Contextual Info: NTE3311 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified

transistor T K 2056

Abstract: K 2056 transistor transistor K 2056
Contextual Info: SANYO SEMICONDUCTOR 12E CORP D | 7 T ci 7 D 7 t 1 0 0 0 S S 0 0 g 32S C 4256 SS2SC4271 Silicon Transistor Silicon Transistor ' High Voltage Switching Applications Very High-Oefinrtion CR T Display Applications JEDEC: T 022 0 package JEDEC: T0126 package High breakdown voltage

Contextual Info: sanyo s e m ic o n d u c t o r corp ~ 1 2 E D | 7 cH 7 Q 7 L i OOOSOb'J r ' 3 3 - I S NPN Triple Diffused Planar Silicon Transistor 2022 Color TV Horizontal Deflection Output Applications with Damper Diode 1222C Features: • High Breakdown Voltage and High Reliability.

2SD1401

Abstract: 2042A 5033K
Contextual Info: SANYO SEMI CONDUCTOR CORP ÍSE D I 7 cH 7 a 7 b UDOSQflL, T' 33' 3 2SD1401 NPN Triple Diffused Planar Silicon Transistor 2022 Color TV Horizontal Deflection Output Applications 1268B Features: • High breakdown voltage and high reliability • High switching speed

ic 30359

Abstract: K 2056 transistor NTC K19
Contextual Info: SANYO SLMICONDUCTOR CORP 12E » g 7TÌ7Q7L. ODOSOfl? T ' 3 3 - 1 3 2SD1402NPN Triple Diffused Planar S ilicon Transistor 2022 Color TV Horizontal Deflection Output Applications 12698 Features: • High breakdown voltage and high reliability • High switching speed

d2c03

Abstract: AN569 MMDF2C03HD MMDF2C03HDR2 SMD310 mosfet transistor 400 volts.100 amperes
Contextual Info: MOTOROLA Order this document by MMDF2C03HD/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MMDF2C03HD Medium Power Surface Mount Products Complementary TMOS Field Effect Transistors Motorola Preferred Device MiniMOS devices are an advanced series of power MOSFETs

zero speed

Abstract: AEC-Q100-002 ATS625 ATS625LSG hall sensor 4-pin SIP ISO 11452-4
Contextual Info: ATS625LSG True Zero-Speed Low-Jitter High Accuracy Gear Tooth Sensor Features and Benefits Description ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ The ATS625 true zero-speed gear tooth sensor is an optimized Hall IC and magnet configuration packaged in a molded module

transistor motorola 236

Abstract: MGY25N120
Contextual Info: MOTOROLA Order this document by MGY25N120/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGY25N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced

transistor MJ 122

Abstract: MGY40N60D
Contextual Info: MOTOROLA Order this document by MGY40N60D/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY40N60D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264

2SA1224

Abstract: NEC JAPAN 3167 1S955 NE74014 NE90100 NE90115
Contextual Info: NEC/ 5bE D CALIFORNIA NEC bM27M14 0005515 bMT MNECC T - 3 U 'L 3 PNP MEDIUM POWER MICROWAVE TRANSISTOR NE90100 NE90115 FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDW IDTH PRODUCT: fr = 2.5 GHz The NE901 Series o f PNP silicon epitaxial transistors is de­

Contextual Info: lEE DI 7cïT?G?k OODSma 5 SANYOSEMICONDUCTORCORP r-sv-i/ 2SD1655 NPN Triple Diffused Planar Silicon Transistor 2039 Color TV Horizontal Deflection Output Applications 1753B Applications . High-voltage, power switching Features . Fast speed tfinaxsO.Hus .

IRFH350

Abstract: 412a L243 g602
Contextual Info: HE D § 4 A5545E GQCHtiEE 1 | Data Sheet No. PD-9.412A INTERNATIONAL R E C T I F I E R T - i T ‘ / 3 INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRFH35Q N-CHANNEL POWER MOSFETs 400 Volt, 0.3 Ohm HEXFET Features: The HEXFET® technology is the key to International

LG direct drive motor

Abstract: 600v 20 amp mosfet transistor tl 11C mosfet
Contextual Info: m jg m J T f 50 AMP, 600 VOLT IGBT PLUS DIODE HALF BRIDGE POWER HYBRID 4f\* a 4 1 U 1 M.S. K EN N ED Y CORP. 315 699-9201 0170 Thompson Road •Cicero, N.Y. 13039 FEATURES: 600V, 50 Amp Capability Ultra Low Thermal Resistance - Junction to Case - 0.21 °C/W

hso16

Abstract: TE55 2sk790
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9 0 9 7 2 5 0 T O S H IB A T O S H IB A TT D I S C R E T E /OPTO J d F § T D T 7 2 5 G ODlbTSS T0SHIBA FIELD e f f e c t TRANSISTOR SEMICONDUCTOR 99D 2 S IC 7 9 0 16755 SILICON N C H A N N E L MOS TYPE C7T-MOSI T-3'?-13 TECHNICAL DATA

2SC3173

Contextual Info: SANYO SEMICONDUCTOR CORP 12E » I 7 CH 7 0 7 L , 0004311 7 T ' 53-11 2SC3173 NPN Epitaxial Planar Silicon Transistor 201OA C R T Display Horizontal Deflection Output Applications 1309B Features: ’ High switching speed • Especially suited for use in high-definition CRT display Vcc=6 to 12V

HMC314

Contextual Info: HMC314 MICROWAVE CORPORATION HBT DRIVER AMPLIFIER 0.7 - 4.0 GHz V00.1100 FEBRUARY 2001 General Description P1dB Output Power: + 18 dBm The HMC314 is a GaAs InGaP Heterojunction Bipolar Transistor HBT MMIC amplifier that operates from a single positive supply. This

A1280A SDO

Abstract: actel a1240 A1225 new a1225a
Contextual Info: Revision 8 ACT 2 Family FPGAs Features • Up to 8,000 Gate Array Gates 20,000 PLD equivalent gates • Replaces up to 200 TTL Packages • Replaces up to eighty 20-Pin PAL Packages • Design Library with over 500 Macro Functions • Single-Module Sequence Functions

te 2443 to220

Abstract: L23C
Contextual Info: UNITRODE CORP 9347963 te U N ITRO D E c F | ci3 4 7 cit33 a a ia a a ? 92D CORP 10887 UFNZ20 UFNZ22 T - 3?- U POWER MOSFET TRANSISTORS 50 Volt, 0.1 Ohm N-Channel FEATURES • Compact Plastic Package • fast Switching • Low Drive Current • Ease of Paralleling

CY8C3665

Abstract: 8051 8bit microcontroller cy8c3665lti-006
Contextual Info: PSoC 3: CY8C36 Family Data Sheet ® Programmable System-on-Chip PSoC General Description With its unique array of configurable blocks, PSoC® 3 is a true system level solution providing microcontroller unit (MCU), memory, analog, and digital peripheral functions in a single chip. The CY8C36 family offers a modern method of signal acquisition, signal

silicon sculptor

Abstract: 40B5 Silicon Sculptor II 42B2 RT54SX-S TQ100 180-pin actel EX128 TQ100 EX256-TQ100
Contextual Info: v4.2 eX Family FPGAs FuseLock Leading Edge Performance • • • • • 240 MHz System Performance 350 MHz Internal Performance 3.9 ns Clock-to-Out Pad-to-Pad • • • Specifications • • • • • 3,000 to 12,000 Available System Gates Maximum 512 Flip-Flops (Using CC Macros)