Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TO-126 HIGH SPEED SWITCHING TRANSISTOR Search Results

    TO-126 HIGH SPEED SWITCHING TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    ICL7662MTV/B
    Rochester Electronics LLC ICL7662 - Switched Capacitor Converter, 10kHz Switching Freq-Max, CMOS PDF Buy
    ICL7660SMTV
    Rochester Electronics LLC ICL7660 - Switched Capacitor Converter, 0.02A, 17.5kHz Switching Freq-Max, CMOS, MBCY8 PDF Buy
    LM1578AH/883
    Rochester Electronics LLC LM1578 - Switching Regulator, Current-mode, 0.75A, 100kHz Switching Freq-Max, MBCY8 - Dual marked (5962-8958602GA) PDF Buy
    LM110/BGA
    Rochester Electronics LLC LM110 - VOLT. FOLLOWER, HIGH-SPEED - Dual marked (M38510/10602BGA) PDF Buy

    TO-126 HIGH SPEED SWITCHING TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SC2899

    Contextual Info: SavantIC Semiconductor Product Specification 2SC2899 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·High voltage,high speed APPLICATIONS ·For high speed and high voltage switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector


    Original
    2SC2899 O-126 250mA 500mA 2SC2899 PDF

    kse13003

    Contextual Info: KSE13003 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATIONS TO-126 • High Speed Switching • Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage Characteristic VCBO Symbol 700 V Collector-Emitter Voltage


    Original
    KSE13003 O-126 kse13003 PDF

    transistor G11

    Abstract: to-126 HIGH SPEED SWITCHING transistor g11 transistor NPN Transistor 10A 400V NPN Transistor 1A 400V to - 92 to-126 npn switching transistor 400v d 772 transistor
    Contextual Info: TS13003 High Voltage NPN Transistor TO-92 TO-126 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCEO 400V BVCBO 700V IC 1.5A VCE SAT Features 1V @ IC =0.5A, IB =0.1A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type


    Original
    TS13003 O-126 TS13003CT TS13003CK transistor G11 to-126 HIGH SPEED SWITCHING transistor g11 transistor NPN Transistor 10A 400V NPN Transistor 1A 400V to - 92 to-126 npn switching transistor 400v d 772 transistor PDF

    NTE3312

    Abstract: NTE331
    Contextual Info: NTE3312 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified


    Original
    NTE3312 NTE3312 NTE331 PDF

    NTE3311

    Abstract: NTE331
    Contextual Info: NTE3311 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified


    Original
    NTE3311 NTE3311 NTE331 PDF

    transistor T K 2056

    Abstract: K 2056 transistor transistor K 2056
    Contextual Info: SANYO SEMICONDUCTOR 12E CORP D | 7 T ci 7 D 7 t 1 0 0 0 S S 0 0 g 32S C 4256 SS2SC4271 Silicon Transistor Silicon Transistor ' High Voltage Switching Applications Very High-Oefinrtion CR T Display Applications JEDEC: T 022 0 package JEDEC: T0126 package High breakdown voltage


    OCR Scan
    SS2SC4271 T0126 300mA, 100mA) SS2SC4272 1S-126A IS-20MA transistor T K 2056 K 2056 transistor transistor K 2056 PDF

    Contextual Info: sanyo s e m ic o n d u c t o r corp ~ 1 2 E D | 7 cH 7 Q 7 L i OOOSOb'J r ' 3 3 - I S NPN Triple Diffused Planar Silicon Transistor 2022 Color TV Horizontal Deflection Output Applications with Damper Diode 1222C Features: • High Breakdown Voltage and High Reliability.


    OCR Scan
    1222C 1S-126A IS-20MA IS-313 IS-313A PDF

    2SD1401

    Abstract: 2042A 5033K
    Contextual Info: SANYO SEMI CONDUCTOR CORP ÍSE D I 7 cH 7 a 7 b UDOSQflL, T' 33' 3 2SD1401 NPN Triple Diffused Planar Silicon Transistor 2022 Color TV Horizontal Deflection Output Applications 1268B Features: • High breakdown voltage and high reliability • High switching speed


    OCR Scan
    2SD1401 1268B 1S-126A IS-20MA IS-313 IS-313A 2SD1401 2042A 5033K PDF

    ic 30359

    Abstract: K 2056 transistor NTC K19
    Contextual Info: SANYO SLMICONDUCTOR CORP 12E » g 7TÌ7Q7L. ODOSOfl? T ' 3 3 - 1 3 2SD1402NPN Triple Diffused Planar S ilicon Transistor 2022 Color TV Horizontal Deflection Output Applications 12698 Features: • High breakdown voltage and high reliability • High switching speed


    OCR Scan
    2SD14022022 IS-20MA IS-313 IS-313A ic 30359 K 2056 transistor NTC K19 PDF

    d2c03

    Abstract: AN569 MMDF2C03HD MMDF2C03HDR2 SMD310 mosfet transistor 400 volts.100 amperes
    Contextual Info: MOTOROLA Order this document by MMDF2C03HD/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MMDF2C03HD Medium Power Surface Mount Products Complementary TMOS Field Effect Transistors Motorola Preferred Device MiniMOS devices are an advanced series of power MOSFETs


    Original
    MMDF2C03HD/D MMDF2C03HD MMDF2C03HD/D* d2c03 AN569 MMDF2C03HD MMDF2C03HDR2 SMD310 mosfet transistor 400 volts.100 amperes PDF

    zero speed

    Abstract: AEC-Q100-002 ATS625 ATS625LSG hall sensor 4-pin SIP ISO 11452-4
    Contextual Info: ATS625LSG True Zero-Speed Low-Jitter High Accuracy Gear Tooth Sensor Features and Benefits Description ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ The ATS625 true zero-speed gear tooth sensor is an optimized Hall IC and magnet configuration packaged in a molded module


    Original
    ATS625LSG ATS625 zero speed AEC-Q100-002 ATS625LSG hall sensor 4-pin SIP ISO 11452-4 PDF

    transistor motorola 236

    Abstract: MGY25N120
    Contextual Info: MOTOROLA Order this document by MGY25N120/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGY25N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced


    Original
    MGY25N120/D MGY25N120 MGY25N120/D* transistor motorola 236 MGY25N120 PDF

    transistor MJ 122

    Abstract: MGY40N60D
    Contextual Info: MOTOROLA Order this document by MGY40N60D/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY40N60D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264


    Original
    MGY40N60D/D MGY40N60D MGY40N60D/D* TransistorMGY40N60D/D transistor MJ 122 MGY40N60D PDF

    2SA1224

    Abstract: NEC JAPAN 3167 1S955 NE74014 NE90100 NE90115
    Contextual Info: NEC/ 5bE D CALIFORNIA NEC bM27M14 0005515 bMT MNECC T - 3 U 'L 3 PNP MEDIUM POWER MICROWAVE TRANSISTOR NE90100 NE90115 FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDW IDTH PRODUCT: fr = 2.5 GHz The NE901 Series o f PNP silicon epitaxial transistors is de­


    OCR Scan
    00GS512 NE90100 NE90115 NE74014 NE901 NE90115 2SA1224 NEC JAPAN 3167 1S955 NE74014 PDF

    Contextual Info: lEE DI 7cïT?G?k OODSma 5 SANYOSEMICONDUCTORCORP r-sv-i/ 2SD1655 NPN Triple Diffused Planar Silicon Transistor 2039 Color TV Horizontal Deflection Output Applications 1753B Applications . High-voltage, power switching Features . Fast speed tfinaxsO.Hus .


    OCR Scan
    2SD1655 1753B 1S-126A IS-20MA PDF

    IRFH350

    Abstract: 412a L243 g602
    Contextual Info: HE D § 4 A5545E GQCHtiEE 1 | Data Sheet No. PD-9.412A INTERNATIONAL R E C T I F I E R T - i T ‘ / 3 INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRFH35Q N-CHANNEL POWER MOSFETs 400 Volt, 0.3 Ohm HEXFET Features: The HEXFET® technology is the key to International


    OCR Scan
    G-603 IRFH350 5S452 T-39-13 G-604 412a L243 g602 PDF

    LG direct drive motor

    Abstract: 600v 20 amp mosfet transistor tl 11C mosfet
    Contextual Info: m jg m J T f 50 AMP, 600 VOLT IGBT PLUS DIODE HALF BRIDGE POWER HYBRID 4f\* a 4 1 U 1 M.S. K EN N ED Y CORP. 315 699-9201 0170 Thompson Road •Cicero, N.Y. 13039 FEATURES: 600V, 50 Amp Capability Ultra Low Thermal Resistance - Junction to Case - 0.21 °C/W


    OCR Scan
    4101B MII-H-38534 LG direct drive motor 600v 20 amp mosfet transistor tl 11C mosfet PDF

    hso16

    Abstract: TE55 2sk790
    Contextual Info: TOSHIBA {DISCRETE/OPTO} 9 0 9 7 2 5 0 T O S H IB A T O S H IB A TT D I S C R E T E /OPTO J d F § T D T 7 2 5 G ODlbTSS T0SHIBA FIELD e f f e c t TRANSISTOR SEMICONDUCTOR 99D 2 S IC 7 9 0 16755 SILICON N C H A N N E L MOS TYPE C7T-MOSI T-3'?-13 TECHNICAL DATA


    OCR Scan
    TDT725G 300uA EGA-2SK790-A hso16 TE55 2sk790 PDF

    2SC3173

    Contextual Info: SANYO SEMICONDUCTOR CORP 12E » I 7 CH 7 0 7 L , 0004311 7 T ' 53-11 2SC3173 NPN Epitaxial Planar Silicon Transistor 201OA C R T Display Horizontal Deflection Output Applications 1309B Features: ’ High switching speed • Especially suited for use in high-definition CRT display Vcc=6 to 12V


    OCR Scan
    H707L, 2SC3173 201OA 1309B IS-20MA IS-313 IS-313A 2SC3173 PDF

    HMC314

    Contextual Info: HMC314 MICROWAVE CORPORATION HBT DRIVER AMPLIFIER 0.7 - 4.0 GHz V00.1100 FEBRUARY 2001 General Description P1dB Output Power: + 18 dBm The HMC314 is a GaAs InGaP Heterojunction Bipolar Transistor HBT MMIC amplifier that operates from a single positive supply. This


    Original
    HMC314 HMC314 PDF

    A1280A SDO

    Abstract: actel a1240 A1225 new a1225a
    Contextual Info: Revision 8 ACT 2 Family FPGAs Features • Up to 8,000 Gate Array Gates 20,000 PLD equivalent gates • Replaces up to 200 TTL Packages • Replaces up to eighty 20-Pin PAL Packages • Design Library with over 500 Macro Functions • Single-Module Sequence Functions


    Original
    20-Pin 16-Bitaerospace, A1280A SDO actel a1240 A1225 new a1225a PDF

    te 2443 to220

    Abstract: L23C
    Contextual Info: UNITRODE CORP 9347963 te U N ITRO D E c F | ci3 4 7 cit33 a a ia a a ? 92D CORP 10887 UFNZ20 UFNZ22 T - 3?- U POWER MOSFET TRANSISTORS 50 Volt, 0.1 Ohm N-Channel FEATURES • Compact Plastic Package • fast Switching • Low Drive Current • Ease of Paralleling


    OCR Scan
    cit33 UFNZ20 UFNZ22 te 2443 to220 L23C PDF

    CY8C3665

    Abstract: 8051 8bit microcontroller cy8c3665lti-006
    Contextual Info: PSoC 3: CY8C36 Family Data Sheet ® Programmable System-on-Chip PSoC General Description With its unique array of configurable blocks, PSoC® 3 is a true system level solution providing microcontroller unit (MCU), memory, analog, and digital peripheral functions in a single chip. The CY8C36 family offers a modern method of signal acquisition, signal


    Original
    CY8C36 CY8C3665 8051 8bit microcontroller cy8c3665lti-006 PDF

    silicon sculptor

    Abstract: 40B5 Silicon Sculptor II 42B2 RT54SX-S TQ100 180-pin actel EX128 TQ100 EX256-TQ100
    Contextual Info: v4.2 eX Family FPGAs FuseLock Leading Edge Performance • • • • • 240 MHz System Performance 350 MHz Internal Performance 3.9 ns Clock-to-Out Pad-to-Pad • • • Specifications • • • • • 3,000 to 12,000 Available System Gates Maximum 512 Flip-Flops (Using CC Macros)


    Original
    PDF