TNP 50 U Search Results

c2555

Abstract: TNP117 TNP156 TNP50 TNP176
Contextual Info: ° NE W Type TNP Wet Tantalum Capacitors Non-Polar Operation { Tantalum Case Technology { Hermetically Sealed { Rugged Construction { Miniature Size { Low DCL { Low ESR { Long Active Life { Long Shelf Life GENERAL SPECIFICATIONS APPLICATIONS: Operating Temperature:

Megger cbt3

Abstract: Megger RCD testers cbt3 avo AVO International CBT3 IEC 1010-1 General Safety Requirements
Contextual Info: - MEGGER RCD TESTER ^3 INTERNATIONAL RCD TESTER AVO A robust instrument for testing most modern types of residual current devices MEGGER CBT3 Fully tests circuit breakers with standard ratings between 6 mA and 500 mA. Intelligent testing of ‘S’ and ‘G’ type selective

TNP117

Contextual Info: Type TNP ^ Wet Tantalum Capacitors • MallorY ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ a ■ ■ Non-Polar Operation ■ Tantalum Case Technology ■ Hermetically Sealed ■ Rugged Construction ■ Miniature Size ■ Low DCL ■ Low ESR ■

Contextual Info: \ T f7 C M C-421000B9 1 ,0 4 8 ,5 7 6 x 9-BIT c m o s d y n a m ic r a m m o d u le * w N E C Electronics Inc. PRELIM IN A RY INFORMATION Description Pin Configurations The MC-421000B9 is a nibble-mode 1,048,576-word by 9-bit CMOS dynamic RAM module designed to operate

Contextual Info: MLS9108-00766 M/A-COM Surface Mount Frequency Synthesizer CDMA 754 - 779 MHz Features 12 Lead Package Integrated VCO/PLL M iniature SMT Package Low Phase Noise +5V Operation 12 11 10 9 a ! 7 DETAIL A nnnnnin M/ A- COM LTD <2.0 . • • • • PART NO. DATE CODE

VcO 869

Contextual Info: MLS9109-00881 M/A-COM Surface Mount Frequency Synthesizer CDMA 869 -894 MHz Features • Integrated VCO/PLL • Miniature SMT Package • Low Phase Noise • +5V Operation 12 Lead Package 12 11 10 9 8 annnn M/ A- COM LTD PART NO. DATE CODE Description The M LS9109-00881 synthesizer design integrates a high perfor­

HD74LV1GU04AVSE

Abstract: HD74LVU04A HD74LV1GU04A HD74LV1GU04ACME
Contextual Info: HD74LV1GU04A Unbuffered Inverter REJ03D0065–0600Z Previous ADE-205-318D (Z Rev.6.00 Aug.29.2003 Description The HD74LV1GU04A has an unbuffered inverter in a 5 pin package. Low voltage and high-speed operation is suitable for the battery powered products (e.g., notebook computers), and the low power

BNP002-02

Abstract: DC Power Supplies circuit BNX003-01 BNP002-03
Contextual Info: EMI SUPPRESSION PRODUCTS/ EMI FILTERS EMIFIL EMIFIL®/EMIGUARD® ON-BOARD TYPE: (FOR DC CIRCUITS; iBIock Type EMIFIL® For Signal Lines Part Number »Mounting Hole Dimensions ^ - ¿ 1.2-7 BNP002-02 BNP002-03 Number of Circuits 2 Circuit Configu­ ration

rlr20c

Contextual Info: DISK # E7 DASH NO DWG SIZE B DATA CONTAINED IN THIS DOCUMENT IS PROPRIETARY TO TROMPETER ELECTRONICS INC. -AND SHALL NOT BE DISCLOSED. COPIED OR USED FOR PROCUREMENT OR MANUFACTURE WITHOUT EXPRESS WRITTEN PERMISSION. D DESCRIPTION TYPE -1 TNP1-1 -2 TNPl-2-/§\ TERM WITH 2.5 BRASS CHAIN

HD74LV04A

Abstract: HD74LV1G04A HD74LV1G04ACME HD74LV1G04AVSE
Contextual Info: HD74LV1G04A Inverter REJ03D0064–0700Z Previous ADE-205-317E (Z Rev.7.00 Aug.28.2003 Description The HD74LV1G04A has an inverter in a 5 pin package. Low voltage and high-speed operation is suitable for the battery powered products (e.g., notebook computers), and the low power consumption extends the

HD74LV1G32A

Abstract: HD74LV1G32ACME HD74LV1G32AVSE HD74LV32A
Contextual Info: HD74LV1G32A 2–input OR Gate REJ03D0068–0600Z Previous ADE-205-321D (Z Rev.6.00 Aug.29.2003 Description The HD74LV1G32A has two–input OR gate in a 5 pin package. Low voltage and high-speed operation is suitable for the battery powered products (e.g., notebook computers), and the low power consumption

2953

Abstract: IDN2934W DN2953B
Contextual Info: *2953 AND 2 9 5 4 FULL-BRÌDGE P\VM MOTOR DRIVERS U D N 2953B FU N C T IO N A L KI.OCK DIAGRAM Tf MPERATUftC IW C üira U* 004 1 U D N 2 954W L ^ H * «I CO* ID N 2 9 5 4 W T E M P fn A T U H E IN *C t<m%m»*t+ t r it ìi ta ble Output Enable Phase low Low

Contextual Info: 4»k i f v«a’ SM59256A 256KByte 256K x 9 CMOS DRAM Module General Description Features The SM59256A is a high performance, 256Kbyte dynamic RAM memory module organized as 256K words by 9 bits, in a 30-pin, SIMM package. The module utilizes two CMOS 256K x 4 and one 256K

HD74LV1G86A

Abstract: HD74LV1G86ACME HD74LV1G86AVSE HD74LV86A
Contextual Info: HD74LV1G86A 2–input Exclusive–OR Gate REJ03D0070–0600Z Previous ADE-205-322D (Z Rev.6.00 Sep.01.2003 Description The HD74LV1G86A performs the Boolean functions Y = A ⊕ B or Y = AB + AB in positive logic. A common application is as a true / complement element. If one of the inputs is low, the other input will be

diodes ir

Abstract: 1N3595 marking D03S
Contextual Info: Micro/semi Corp. ? Tnp diocie experts -, MV SANTA A NA, CA F o r m o r e i n f o r m a ti o n call: 714 9 7 9 - 8 2 2 0 FEATURES G EN ERAL PURPOSE DIO DES • HIGH CONDUCTANCE • EXTREMELY LOW REVERSE CURRENT • ULTRA-STABLE OPERATION UP TO +150°C • VO IDLESS HERMETICALLY SEALED GLASS PACKAGE

HD74LV02A

Abstract: HD74LV1G02A HD74LV1G02ACME HD74LV1G02AVSE HD74LV1G02AVS
Contextual Info: HD74LV1G02A 2–input NOR Gate REJ03D0063–0600Z Previous ADE-205-316D (Z Rev.6.00 Aug.28.2003 Description The HD74LV1G02A has two–input NOR gate in a 5 pin package. Low voltage and high-speed operation is suitable for the battery powered products (e.g., notebook computers), and the low power consumption

rg3j 005

Abstract: 4948 1N5626 HP214A HP-214A
Contextual Info: G P R 3A GLASS AMP II 3A Toper ~ 65" + 175 C T.t r K,! 300 C Type Types Typen G 3A G 3B G 3D G 3G G 3J G 3K G 3M lo V rrm (V) (1N 5624) (1N 5625) (1N5626) (1N 5627) 50 100 200 400 600 800 1000 FAST RECOVERY-GPR Topor = - 6 5 ° + 175 C — RG 1A RG 1B RG 1D

HD74LV1G08AVSE

Abstract: HD74LV08A HD74LV1G08A HD74LV1G08ACME
Contextual Info: HD74LV1G08A 2–input AND Gate REJ03D0066–0700Z Previous ADE-205-319E (Z Rev.7.00 Aug.29.2003 Description The HD74LV1G08A has two–input AND gate in a 5 pin package. Low voltage and high-speed operation is suitable for the battery powered products (e.g., notebook computers), and the low power consumption

Contextual Info: Supertex inc. HV430 High-Voltage Ring Generator Features ► ► ► ► ► ► ► The RESET input functions as a power-on reset when connected to an external capacitor. The FAULT output indicates an overcurrent condition and is cleared after 4 consecutive cycles with no overcurrent condition. A logic low

transistor equivalent table 557

Abstract: 21045F
Contextual Info: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication

Contextual Info: MFC M C-421000B8 1 ,0 4 8 ,5 7 6 X 8-BIT c m o s d y n a m ic r a m m o d u le NEC Electronics Inc. PRELIM IN A RY INFORMATION Description Pin Configurations The MC-421000B8 isa nibble-mode 1,048,576-word by 8-bit dynamic R A M module designed to operate from a

Contextual Info: I it[7 □ □ ran P A R T NAME LD o o No. CD ro OO 00 •NT LD o U RECEPTACLE FINISH UL94V-0 \ O V " j O HOUSING RECEPTACLE O mm. MATERIAL LIQUID CRYSTAL POLYMER, GLASS FILLED 1J PHOSPHOR TE RM IN AL NATURAL WHITE) , UL94V-0 A BRONZE O0 CD s Q 22.45 (PIN/ROW- l)xPITCH =(B)

HV430

Abstract: PWM 220v ac 75E1 HV430WG HV430WG-G MS-013 high power pulse generator with mosfet
Contextual Info: Supertex inc. HV430 High-Voltage Ring Generator Features ► ► ► ► ► ► ► 105Vrms ring signal Output over current protection 5.0V CMOS logic control Logic enable/disable to save power Adjustable deadband in single-control mode Power-on reset Fault output for problem detection

Contextual Info: / . j 1N3595 Micro/semi Corp. / [☆JANS* $ Tnp diode experts SANTA ANA, CA F o r m o r e in f o r m a ti o n call: 714 9 7 9 - 8 2 2 0 FEATURES G EN ERAL PURPOSE DIO DES • HIGH CONDUCTANCE • EXTREMELY LOW REVERSE CURRENT • ULTRA-STABLE OPERATION UP TO +150°C