TL-97 DIODE Search Results

ML40150

Abstract: HTRB ML4409 ML40019 ML4626 ml4558 ML4661P ML456 ml4627 ML4405
Contextual Info: Space Qualified Diodes ML4000 Series V2.00 GaAs Gunn Diodes Operating Frequency 5 to 8GHz 8 to 12.4GHz 12.4 to 18.0GHz 18.0 to 22.0GHz 22.0 to 27.0GHz 27.0 to 32.0GHz 32.0 to 40.0GHz 40.0 to 50.0GHz 50.0 to 60.0GHz 90.0 to 100.0GHz Minimum Output Power Po mW

LMC7660

Abstract: lm35 temperature sensor C1995 J08A LCM7660 LM35 LMC7660IN LMC7660MJ LP2951 lm35 application note
Contextual Info: LMC7660 Switched Capacitor Voltage Converter General Description Features The LMC7660 is a CMOS voltage converter capable of converting a positive voltage in the range of a 1 5V to a 10V to the corresponding negative voltage of b1 5V to b10V The LMC7660 is a pin-for-pin replacement for the industry-standard 7660 The converter features operation over full temperature and voltage range without need for an external diode low quiescent current and high power efficiency

IRKTF 41

Abstract: UL1385 IRKHF CS 112 thyristor
Contextual Info: I I Bulletin 127091 rev.A 09/97 International IG R Rectifier i r k . f h 2 . s e r i e s FAST THYRISTOR/ DIODE and THYRISTOR/THYRISTOR INT-A-pak Power Modules Features 112 A • Fast turn-off thyristor ■ Fast recovery diode ■ High surge capability

ODS-119

Abstract: ML40150
Contextual Info: M MOM m an A M P com pany Space Qualified Diodes ML4000 Series GaAs Gunn Diodes Operating Frequency 5 to 8GHz 8 to 12.4GHz 12.4 18.0 22.0 27.0 32.0 40.0 50.0 90.0 to to to to to to to to Maximum Operating Current Minimum Output Power Po mW 18.0GHz 22.0GHz

Contextual Info: B ulletin 10125J 07/97 International l R Rectifier 80L m .c s 05C b ir i s e r ie s FAST RECOVERY DIODES Junction Size: S q u a re 180 m ils W afer Size: 4" VRRM Class: 1 000 and 1 2 0 0 V Passivation Process: G la s s iv a te d M O A T Reference IR Packaged Part: 2 0 E T F S e rie s

Contextual Info: B ulletin 10124J 07/97 International I Q R Rectifier iri 80L m .c s 02Cb se r ie s FAST RECOVERY DIODES Junction Size: S q u a re 180 m ils W afer Size: 4" VRRM Class: 2 0 0 to 6 0 0 V Passivation Process: G la s s iv a te d M O A T Reference IR Packaged Part:

schottky barrier diode b22

Abstract: FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08
Contextual Info: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 2nd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode

Contextual Info: ZGL41-100 thru ZGL41-200A Vishay General Semiconductor Surface Mount Glass Passivated Power Voltage-Regulating Diodes FEATURES • Plastic MELF package • Ideal for automated placement • Glass passivated chip junction • Low Zener impedance • Low regulation factor

Contextual Info: Bulletin 12134 rev. B 11/97 International SAFElR Series 20ETS.FP lö R Rectifier INPUT REC TIFIER DIODE TO-220 FULLPAK VF FSM Des c r ipt io n/Feat u res < 1V@ 10A = 300A VRRM 800 to 1600V T he 20E T S .FP rectifie r SAFElR series has been o p tim ized fo r ve ry low fo rw a rd voltage drop, with

J-STD-002

Abstract: ZGL41-100 ZGL41-110 ZGL41-200A DO-213AB VISHAY DO213AB VISHAY ZGL41
Contextual Info: ZGL41-100 thru ZGL41-200A Vishay General Semiconductor Surface Mount Glass Passivated Power Voltage-Regulating Diodes FEATURES • Plastic MELF package • Ideal for automated placement • Glass passivated chip junction • Low Zener impedance • Low regulation factor

ZGL41-110

Abstract: ZGL41-200A DO-213AB JESD22-B102 J-STD-002 ZGL41-100
Contextual Info: ZGL41-100 thru ZGL41-200A Vishay General Semiconductor Surface Mount Glass Passivated Power Voltage-Regulating Diodes FEATURES • Plastic MELF package • Ideal for automated placement • Glass passivated chip junction • Low Zener impedance • Low regulation factor

Contextual Info: TIL197, TIL198, TIL199, TIL197A, TILI98A, TILI199A TIL197B, TIL198B, TIL199B SINGLE/DUAL/QUAD CHANNEL OPTOCOUPLERS/OPTOISOLATORS 8003023 03437. MAY 199C * Gallium-Arsenide Diode Infrared Source

diode 500A

Contextual Info: K1 K2 DU500FD100 1000V 500A A1 A2 ULTRAFAST SOFT RECOVERY DIODE MODULE PRODUCT DESCRIPTION PRODUCT FEATURES PRODUCT APPLICATIONS These 500A ultrafast diode Application Specific Power Modules are designed for high frequency switching where trr and the softness of the

DU500FD40

Abstract: pearson ct 411 152405
Contextual Info: K1 K2 DU500FD40 A1 400V 500A A2 ULTRAFAST SOFT RECOVERY DIODE MODULE PRODUCT DESCRIPTION PRODUCT FEATURES PRODUCT APPLICATIONS These 500A ultrafast diode Application Specific Power Modules are designed for high frequency switching where trr and the softness of the

Contextual Info: Bulletin 127095 rev. A 08/97 International IS R Rectifier IRK.L132. SERIES INT-A-pak Power Modules FAST RECOVERY DIODES Features • Fast recovery tim e characteristics ■ E lectrically Isolated base plate ■ Industrial standard package ■ Sim plified m echanical designs, rapid assem bly

Contextual Info: Bulletin 12108 rev. C 11/97 Inte rn ation al I ö R Rectifier SAFElR Series 8EWS.S SURFACE MOUNTABLE INPUT RECTIFIER DIODE vF < 1V@ 5A D escription/Features 'fsm = 200A T he 8EW S .S rectifier SAFElR series has been V RRM8 0 0 to 1 2 0 0 V o p tim ized fo r ve ry low forw ard voltage drop, with

P71C

Abstract: JESD22-A104 TEST CONDITION K TIA-968-A GR-1089 P61C SLIC PROTECTION p17c
Contextual Info: SIDACtor Protection Thyristors SLIC Protection Fixed Voltage Q2L Series 3.3x3.3 QFN Description The series provides single line protection using a fixed voltage switching device for negative surges. All positive surges are routed through an internal diode to a ground reference.

ZGL41-110

Abstract: DO-213AB J-STD-002 ZGL41-100 ZGL41-200A
Contextual Info: ZGL41-100 thru ZGL41-200A Vishay General Semiconductor Surface Mount Glass Passivated Power Voltage-Regulating Diodes FEATURES • Plastic MELF package • Ideal for automated placement • Glass passivated chip junction • Low Zener impedance • Low regulation factor

BZX85

Abstract: diode zener bzx c9v1 BZX85 C27 DIODE BZX 24 BZX85-C15 C82 diode diode zener BZX85 C 5.1 BZX85C c4v3 zener diode C110
Contextual Info: ELECTRONICS INDUSTRY USA CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com BZX85C Series SILICON ZENER DIODES

BZX85

Abstract: zener diode marking c24 DIODE BZX 62 BZX85 C27 diode zener BZX85 C 5.1 C82 diode BZX85C C100 C110 C120
Contextual Info: BZX85C Series SILICON ZENER DIODES DO - 41 VZ : 2.4 - 200 Volts PD : 1.3 Watts FEATURES : * Complete Voltage Range 2.7 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0) 0.205 (5.2)

Contextual Info: Transient Voltage Suppression Diodes Axial Leaded – 20000W RoHS 20KPA Series Description The 20KPA Series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events.

Contextual Info: MBR150, MBR160 MBR160 is a Preferred Device Axial Lead Rectifiers The MBR150/160 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal

Contextual Info: Zener Diodes Surface Mount 1W SMAZ5V1 - SMAZ39 RoHS VZ: 5.1-39 V PD: 1 W Features ϥ ϥ ϥ ϥ ϥ ϥ ϥ Glass/Oxide passivated chip Low leakage Built-in strain relief Low inductance High peak reverse power dissipation Lead Pb -free component For use in stabilizing and clipping

thyristor BT 161

Contextual Info: I . I Bulletin 127104 rev. A 09/97 International i q r Rectifier i r k . f 7 2 „ s e r ie s FAST THYRISTOR/ DIODE and THYRISTOR/THYRISTOR INT-A-pak Power Modules Features • 71 A Fast turn-off thyristor ■ Fast recovery diode ■ High surge capability