TL 555 C Search Results

MSD 7818

Abstract: MN9106 information applikation 7490 N TDA 5700 information applikation mikroelektronik udssr hefte 143KT1 Mikroelektronik Information Applikation K 176 LE, K 561 LN
Contextual Info: In n in ik ü r Q fâ lI Information Applikation RGW Typen­ übersicht + Vergleich TeiM UdSSR JitfÆÊL JUUUUUUL&JJJUL i m i n i ^ r ^ c z l c i c b p o n Information Applikation , 9 H E F T 4 9 * R G W T y p e n ü b e r s i c h t + V e r g l e i c h Teil 1

Contextual Info: DATA DISPLAY PRODUCTS LIE 2b44520 D 000D5Ö7 1^5 Data Display Products • DDF T-l LEDs W ater Clear • Red, Amber, Amber/Yellow, Yellow, Green, Blue • Water Clear Encapsulation • Luminous Intensities from 3 to 160 mcd Electro-Optical Characteristics @ TK — 25°C

Contextual Info: LM C 555 LMC555 CMOS Timer T ex a s In s t r u m e n t s Literature Number: SNAS558H LMC555 Sem iconductor CMOS Timer General Description Features The LMC555 is a CMOS version of the industry standard 555 series general purpose timers. In addition to the standard

TL1100 F F260 Q

Abstract: tl 555 c F260 TL1100 tl 555
Contextual Info: PP 080-089 Tact.qxd 5/7/02 10:47 AM Page 80 SERIES TL SWITCHES TACT SWITCHES SPECIFICATIONS Rating: Electrical Life: Contact Resistance: 50mA@50 VDC 100,000 cycles 100mΩ max., typical @ 2-4 VDC 100mA for both silver and gold plated contacts 1,000MΩ min.

Contextual Info: LM 96570 LM96570 Ultrasound Configurable Transmit Beamformer Texas In s t r u m e n t s Literature Number: SNAS505D t a l Semiconductor LM96570 Ultrasound Configurable Transmit Beamformer General Description Features T he LM 9 6 5 7 0 is an e ig h t-ch a n n e l m o n o lith ic b e a m fo rm e r fo r

Contextual Info: DATA D I S P L A Y P R O D U C T S blE D • 2 b 4 4 5 2 0 G G Q O b D T bflb ■ D D P T - l 3/ 4 D ata D isp lay P ro d u cts w id e ^ LED s iu u m in a tor, N on -D iffu sed • Red, Amber, Amber/Yellow, Yellow, Green • Non-Diffused Tinted Encapsulation

r133a

Abstract: TLR134A TLR133A D133A 134A TLS133A
Contextual Info: TOSHIBA T LD 133A ,T LD 134A T O SH IB A LED L A M P T L G 133A , T L G 134A , T L 0 1 3 3 A , T L 0 1 3 4 A , TLP G 133A T L P G 134A , TL R 133A , T L R 134A . T L S1 3 3 A , T L S134A TL U R 133A , TL U R 134A , T L Y 133A , T L Y 134A PA NEL C IRCUIT IN D IC A T O R

MH 74141

Abstract: Tesla katalog MH74S04 MH74188 information applikation MH74S287 mikroelektronik RFT CDB404E ucy 74132 MZH 115
Contextual Info: m o N r ^ e le l- c fe n a n il- c Information Applikation ._ B|B Information Applikation Heft 26: IMPORT-IS Teil 2 i ' . • fbkj veb Halbleiterwerk frankfurt/oder Ü B d batriab im vab ko m binat mfcr m M ftrnnllt DER TECHNIK I Bezirksvorstand Frankfurt/O.

Contextual Info: PRELIMINARY — Am29LV200T/Am29LV200B A M D tl 2 Megabit 262,144 x 8-Bit/131,072 x 16-Bit CMOS 3.0 Volt-only Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ ■ — Extended voltage range: 2.7 to 3.6 volt read and

elektor mag

Abstract: Lesen Sie mehr!
Contextual Info: MIKROPROZESSOREN Programmieren mit der BASIC-Stamp 2 Teil 8: Ende : Der photophobische Roboter Von Dennis Clark Phase 3: Der photophobische Roboter und die subsumtive Programmierung Wir wollen nun überlegen, ob es für den Roboter eine anspruchsvollere Tätigkeit gibt als nur planund ziellos im Raum umherzufahren. Ein Schritt in

Contextual Info: *SYNERGY PRELIMINARY SY10EL51 SY100EL51 DIFFERENTIAL CLOCK D FLIP-FLOP SEMICONDUCTOR DESCRIPTION FEATURES • 475ps propagation delay The SY10EL/100EL51 are differential clock D flip-flops with reset. These devices are functionally similar to the E151 devices, with higher performance capabilities. With

jxb series

Contextual Info: JXB VINIATURL ALUMINUM ELECTROLYTIC CAPACITORS SERIES 1 0 5 ° C / M ^ t i £ ' l ' > t ° - ? ' > X p nn 105°C Miniaturized. Low impedance. & FEATURES ♦ ft Miniaturized Low impedance a t lOOKHz with selected m aterials. SPECIFICATIONS æ H g s ¡M Items

Contextual Info: 1ÖE D MARKTECH IN TE RNA TI ON AL 157m5S QGDQSe14 1 STANDARD T-l% LED LAMPS T 4 I-Z I FEATURES • • • • All plastic mold type. Low drive current, high Intensity. Excellent on/off contrast ratio. Fast response time, capable of pulse operation. MAXIMlfM RATIMFGS Ta = 25°C

2N6898

Abstract: 2N6897 36485 2N6798 TRANSISTOR C 557 B 2n6800 2N6901 IDM30 2N6904 qpl-19500
Contextual Info: Standard Power M O SFETs File Number 1875 2N6897 Power M O S Field-Effect Transistors P-Channei Enhancement-Mode Power M O S Field-Effect Transistors 12 A, 100 V ros on : 0.3 0 TERMINAL DIAGRAM 3 o Features: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds

2N6792 JANTX

Abstract: 2N6792 2n6800 C055 LH0063 QPL-19500 2N6904
Contextual Info: Standard Power MOSFETs File N u m be r 1901 2N6792 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistors 2 A, 400V T oS lon = 1 80 N-CHANNEL ENHANCEMENT MODE D Features: • SOA is power-dissipation limited m Nanosecond switching speeds

Contextual Info: <;w ^ IP Back to FETs NESM240 NESM240Z NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R DS on • LOW DRIVE REQUIREM ENT • DYNAMIC d v / d t RATING ABSOLUTE MAXIMUM RATINGS (Tc - 25°C unless otherwise noted) PARAMETERS / TEST CONDITIONS

2N6788

Abstract: 2n6790
Contextual Info: 2N6788 and 2N6790 Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/555 DESCRIPTION These 2N6788 and 2N6790 devices are military qualified up to a JANTXV level for highreliability applications. Microsemi also offers numerous other products to meet higher and

Contextual Info: •■.a ■A’■ MF CRH A’ AMD3 Am29LL800B 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 2.2 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS ■ Single power supply operation — 2.2 to 2.7 volt read and write operations for battery-powered applications

Contextual Info: 2N6790U Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/555 DESCRIPTION This 2N6790U device is military qualified up to a JANTXV level for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage

Telefunken diode color code

Abstract: TDSG5160 telefunken led display
Contextual Info: T em ic TELEFUNKEN Semiconductors Explanation of Technical Data TEMIC light emitting diodes and displays are generally designated in accordance with the TEMIC designation system: TL. = Light emitting diode TD. = Display The following figures show how the components can be identified.

2N6784

Abstract: 2n6800 LH0063 QPL-19500 2sC 1906 transistor 2N6784 JANTX
Contextual Info: Standard Power MOSFETs File N um ber 2N6784 1906 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor N-CHANNEL ENHANCEMENT MODE 2.25A, 200V fD S o n = 1.50 Features: • SOA is power-dissipatiort limited m Nanosecond switching speeds

2n6798 jantx

Abstract: 2N6798 IH0063 2N6756 QPL-19500
Contextual Info: Standard Power MOSFETs 2N6798 File Number 1903 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor 5.5A, 200V TDSIonl = 0 .4 0 N-CHANNEL ENHANCEMENT MODE Features: • m m ■ ■ SOA is power-dissipation limited

TLUG163

Abstract: TLUR163 TLS163 tluy163 TLY163 TLUR164 TLG164 TLUG164 TL0163 TLPG163
Contextual Info: TOSHIBA LED LAMP SEMICONDUCTOR TO SHIBA TECHNICAL TLG163/164, TL0163/164, TLPG163/164 TLPY164, TLS163/164, TLUG163/164 TLUR163/164, TLUY163/164, TLY163/164 DATA HIGH PAN EL CIRCU IT IN D ICATO R • • All Plastic Mold Type TLD 163 : Colored Transparent Lens

Contextual Info: T O SH IB A TL S,G,PG 1005A(T03) TOSHIBA LED LAMP TLS1005A (T03), TLG1005A (T03)f TLPG1005A(T03) PANEL CIRCUIT INDICATOR Surface Mount Device 3.2 (L) X 2.4 (W) X 2.4 (H) mm Size <j>2 mm Thrust Out Domed Lens Small Package - High Density M ounting is Available