TL 431 G Search Results

Contextual Info: Small DIP Type Clock Oscillator DOC-431 Series SPECIFICATIONS • O j& n F-equangy C M O S or TTL C M O S or TTL TTL T TL 6 2 5 K H z ~ 2 5 .0 M H z 25 0 -7 0 0M H z 5 .0 -2 3 9M H z 2 4 .0 -5 0 0M H z FfSquenoyTelerw ce tIO O p p m in c lu d in g O p e r a tin g T e m p e m tu r e R a n c e

431L

Abstract: pl431 TOP-SIDE MARKING H1 SOT89 431 sot-23 zener h a 431 transistor you ad electronics APL431L STD-020C l431 marking w1 sot-23-5
Contextual Info: APL431L Low Voltage Adjustable Precision Shunt Regulator Features General Description • • The APL431L is a 3-terminal low voltage adjustable precision reference with specified thermal stability over applicable commercial temperature ranges. Output voltage may be set to any value between Vref 1.

TL431

Abstract: sot-23 MARKING CODE 431 431 sot-23 tl431 sot-23 sot 23 marking code 431 TL431 application note TL431 sot package sot-23 TL431C TL 431 regulator 431 sot 23
Contextual Info: PROGRAMMABLE PRECISION SHUNT REGULATOR FEATURES TL431/A/C TO-92 PKG z Programmable Output Voltage to 40V z Guaranteed 0.5% Reference Voltage Tolerance z Low 0.2Ω Typ. Dynamic Output Impedance 3 T O P z Cathode Current Range(Continuous) – 100 ~ 150 mA

IRF830

Abstract: IRFP430 rectifier 832 IRF833 IRF831 IRF832 IRFP431 IRF830.831 irfp4303 diode on 832
Contextual Info: SAMSUNG ELECTRONICS INC b7E ]> • IRF830/831Z832/833 IRFP430/431Z432/433 T T b M m e DD17317 37T ■ SP16K N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Low er R d s ON Im proved in ductive ru g g ed n es s F ast sw itch ing tim es R ug ged po lysilicon g a te cell stru ctu re

LM 471 APPLICATION

Abstract: 500MHz7 4532 ct 3225 TAIYO NT TS-601
Contextual Info: 7 i 7 " f h51y 7°tf — X T7 7~A— ! Ferrite chip beads lineup list £ BK vU-X'ts -f< T )-h ^ -v 7 ° t :-X 'T £ (FBM) v'J-X 2 0 < 7 ) v 'J - X T \ iliS -§ -7 -r > ^ G H The combination of the BK Series multilayer high-loss inductors and the FBM series wire wound chip ferrite beads allow you to cover a wide (broad) range of

RT100KP43A

Abstract: RT100KP45A RT100KP40A RT100KP RT100KP300 rt100kp400a
Contextual Info: TH97/2478 RT100KP40A-400CA TH09/2479 IATF 0060636 SGS TH07/1033 TRANSIENT VOLTAGE SUPPRESSORS DO-204AR VWM : 40 - 400 Volts PPK : 100,000 Watts FEATURES : 1.00 25.4 MIN. 0.251 (6.40) 0.244 (6.20) * Glass passivated junction chip * Excellent Clamping Capability

LL331

Abstract: BK1608 BK2125 TS601 LL12T w431 HW431 1005LL lL33 BK1608HS601
Contextual Info: MULTILAYER FERRITE CHIP BEAD S BK SERIES -55~+125°C O P E R A TIN G TEM P. * :-3 'itilo • A g r t a B Â t t S f ê f f l O f c i Ë Â v - J i 'K W f ë K J : ^ è I' ■GN D ^ g CD/c * . / \° 2 - > l x l + ± CDg È I f * L' • y -f x x m n t z t o i f c * * a |j i - > 3 > i ; ' f > f - ^ > x i 7 < > t 7 ^

marking code C4 Sot 23-5

Abstract: marking h2 sot-23-5 marking H2A sot-23 h2 sot-23-5 marking w1 sot-23-5 SOT89 voltage regulator marking code 93 SOT 89 marking CODE c4 sot-23 MARKING CODE 431 APL431 sot-89, H1, H2, H3, H4
Contextual Info: APL431 Adjustable Precision Shunt Regulator Features General Description • • Precise Reference Voltage to 2.500V The APL431 is a 3-terminal adjustable voltage reference Guaranteed 0.5%, 1% or 2% Reference with specified thermal stability over applicable

400ca

Abstract: RT100KP43A RT100KP40A RT100KP45A L275
Contextual Info: TH97/2478 RT100KP40A-400CA TH09/2479 IATF 0060636 SGS TH07/1033 TRANSIENT VOLTAGE SUPPRESSORS DO-204AR VWM : 40 - 400 Volts PPK : 100,000 Watts FEATURES : 1.00 25.4 MIN. 0.251 (6.40) 0.244 (6.20) * Glass passivated junction chip * Excellent Clamping Capability

335 35K

Abstract: IC 4069 Kyocera 38 kHz 455bk 500Khz resonator 4069 HEX INVERTER 338 35K tl 4069 655kHz KBR bk 06
Contextual Info: KBR -B, -BK, -F Series Ceramic Resonators kHz Band Ceramic Resonators ƒO: 190 to 1050 kHz FEATURES HOW TO ORDER 1 Optimum selection of oscillation parameters possible according to application 2) Highly reliable design with excellent environmental resistance

stm cl-50

Abstract: 74LCX38Mx 74LCX38 74LCX38M 74LCX38MTC 74LCX38MTCX 74LCX38SJ 74LCX38SJX
Contextual Info: 74LCX38 National Semiconductor PRELIMINARY 74LCX38 Low Voltage Quad 2-Input NAND Gate Open Drain with 5V Tolerant Inputs General Description The LCX38 contains four 2-input open drain NAND gates. The inputs tolerate voltages up to 7V allowing the interface

Contextual Info: S4A THRU S4M 4.0 AMPS. Surface Mount Rectifiers Voltage Range 50 to 1000 Volts Current 4.0 Amperes SMC/DO-214AB Features .129 3.27 .118(3.0) For surface mounted application Glass passivated junction chip. Low forward voltage drop High current capability Easy pick and place

J113 equivalent

Abstract: j111 SJ-112 J113 J112 equivalent J112 TO92 2N4391 equivalent
Contextual Info: J111 SERIES N-Channel JFETs f T S iE c o n ix JmM in c o r p o ra te d The J111 Series are low-cost, all-purpose analog switches designed to support a wide range of applica­ tions. They features low on-resistance, capacitance and good off-isolation. Additionally, our TO-92 pack­

Contextual Info: MARKTECH INTERNATIONAL MTSS8520 IflE D • S 7 = n b S 5 G O Q G 4 S ,ì T ■ SLOTTED SWITCH T - 4 1 - 7 3 INFRARED LED+PHOTO DARLINGTON ■K—i — c — •— F I I APPLICATIONS W Al B • OPTICAL SWITCH • SHAFT POSITION AND VELOCITY SENSOR FEATURES

BUZ41A

Contextual Info: SILICONIX INC 1ÖE » • Ô2S473S O G m b Q T Ö BUZ41A fsr Siliconix in c o r p o r a t e d N-Channel Enhancement Mode Transistor TO-220AB TOP VIEW ~Ô~ PRODUCT SUMMARY V BR|DSS 'W 500 1.5 •d (A 4.5 1 GATE 2 DRAIN (Connected to TAB) 3 SOURCE ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

IRL610

Abstract: IRL611
Contextual Info: N-CHANNEL LOGIC LEVEL MOSFETS IRL610/611 FEATURES • • • • • • • • Lower Rds ON Excellent voltage stability Fast switching speeds Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

Contextual Info: /<•?/■ Danders 0.5-26.5 GHz OCTAVE BAND 2 and 4-WAY SMA POWER DIVIDERS • • • • Operation to 26.5 GHz Excellent Phase and Amplitude Tracking High Isolation Between Output Ports Small Size • Operational Temperature Range: -55°to +85°C SPECIFICATIONS

SN74LVCH16240A

Abstract: ML1723
Contextual Info: SN74LVCH16240A 16-BIT BUFFER/DRIVER WITH 3-STATE OUTPUTS S C A S566C - M ARCH 1996 - R E V IS E D JANUARY 1997 Member of the Texas Instruments Widebus Family EPIC™ Enhanced-Performance Implanted CMOS Submicron Process Typical V qlp (Output Ground Bounce)

S 170 MOSFET TRANSISTOR

Abstract: transistor w 431 PDF Datasheets CMT20N50 CMT20N50N3P td 6950
Contextual Info: CMT20N50 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination ! Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability ! Avalanche Energy Specified without degrading performance over time. In addition, this

Contextual Info: TOSHIBA LOGIC/MEMORY IME D | Ei G T ? a 4 ä 0 0 1 ä 2 ? l b l T-4k-cr?~is TC74HC279P/F QUAD S-R The TC74HC279 is a high speed CMOS QUAD S-R LATCH fabricated with silicon gate C2M0S technology.

TC74HC279P

Contextual Info: TC74HC279P/F T C 7 4 H C 2 7 9 P / F Q U A D S -R LATCH_ The TC74HC279 is a high speed CMOS QUAD S-R LATCH fabricated with silicon gate C 2M0S technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation.

M74HC164

Contextual Info: SGS-THOMSON «¡R 3miOT iO gS M54HC164 M74HC164 8 BIT SIPO SHIFT REGISTER • HIGH SPEED tPD = 15 ns (TYP. AT Vcc = 5 V ■ LOW POWER DISSIPATION Icc = 4 (iA (MAX.) AT Ta = 25 °C ■ OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS ■ BALANCED PROPAGATION DELAYS

LA 7805 CV

Abstract: SHUNT REGULATOR i 7805 CV lm 7805 n 7805 SOT89 431l 431L TO-92 LM 7805 CV 7805 CV NJM431L
Contextual Info: NJM431 « o n t* ADJUSTABLE PRECISION SHUNT REGULATOR • PACKAGE OUTLINE ■ GENERAL DESCRIPTION The NJM 431 is a 3 terminal adjustable shunt regulator. The output voltage may be set to any value betw een VREF about 2 .5V and 36V by tw o resistors. Output circuitry show s a sharp turn-on characteristics.

1N523

Contextual Info: 19 B9963 CENTRAL SEMICONDUCTOR h i g BEÊPai g^a&ESQBBSSOISÊ !? @ ® F g D e J iV ö ^T]] QDOOETT 3 |~~ 1135518, A, B, C, D §@waie©iitäiyG£oF w Csntral m m THRU m central semiconductor Corp. 3> 1N55U6, A, B, C, D g©&sii£@siefüeter C©rp. «»¿•fry