TL 27A Search Results

M39029/1-101

Abstract: M22885 ms27722-22 MS24523-23 MS27785-30 ms24515 MS27719-23-1 MIL-S-83781 MS24524-23 MS27723-23
Contextual Info: TL Series FEATURES ɀ Qualified to MIL-S-3950 ɀ Environment-proof sealing ɀ 1, 2, and 4 pole circuitry ɀ Standard and pull to unlock levers ɀ 2 and 3 position, maintained, and momentary toggle action ɀ Temperature range: – 85°F to +160°F – 65°C to +71°C

Saba tv Circuit Diagram schematics

Abstract: 13003 TO 92 PACKAGE 13005 2 ANI 1015 JE 13003 oasis si 13003 J310 54S85 SRIFM
Contextual Info: MIL-M-38510/82B 30 OCTOBER 1987 SUPERSEDING MIL-M-38510/82A 30 November 1 9 8 3 M I LI TA R Y SPECI FI CATI ON MI CROCI RCUI TS, DIGITAL, BI POLAR, SCHOTTKY T TL , MAGNITUDE COMPARATORS, MONOLI THI C SI LI CON This s p e c ific a tio n is me n t s and Agencies

Contextual Info: IN T E R F A C E SP E C IF IC A T IO N A D PC M L IN E FO R M A T T E R B t8 2 0 0 .c .1 .0 INTRODUCTION This specification describes an ADPCM Line Formatter circuit that implements signaling and line formatting for 32 kbit/s ADPCM voiceband signals according to ANSI standard Tl.302-1989, "Digital Processing of

76419S

Abstract: AN7254 AN9321 AN9322 HUF76419P3 HUF76419S3S HUF76419S3ST TB334
Contextual Info: HUF76419P3, HUF76419S3S Data Sheet August 1999 File Number 4669.1 27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUF76419P3 HUF76419S3S

76419s

Contextual Info: HUFA76419P3, HUFA76419S3S TM Data Sheet November 2000 File Number 4978 27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUFA76419P3 HUFA76419S3S

76419S

Abstract: HUFA76419P3 HUFA76419S3S HUFA76419S3ST TB334 76419P
Contextual Info: HUFA76419P3, HUFA76419S3S Data Sheet December 2001 27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUFA76419S3S HUFA76419P3 Features • Ultra Low On-Resistance

76419s

Abstract: 7641 HUF76419P3 HUF76419S3S HUF76419S3ST TB334 HUF76419
Contextual Info: HUF76419P3, HUF76419S3S Data Sheet August 1999 File Number 4669.1 27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title UF7 19P Packaging JEDEC TO-220AB JEDEC TO-263AB UF76 9S3 bjec utho eyw s tersi DRAIN FLANGE SOURCE DRAIN GATE GATE

76419S

Abstract: HUFA76419P3 HUFA76419S3S HUFA76419S3ST TB334 76419P 76419
Contextual Info: HUFA76419P3, HUFA76419S3S Data Sheet November 2000 File Number 4978 27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUFA76419P3 HUFA76419S3S

76419S

Abstract: 76419P AN9321 HUF76419P3 HUF76419S3S HUF76419S3ST TB334 49e8
Contextual Info: HUF76419P3, HUF76419S3S Data Sheet December 2001 27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) HUF76419P3 HUF76419S3S Features • Ultra Low On-Resistance

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC DIST AF 50 ALL RIGHTS RESERVED. REVISIONS LTR D DESCRIPTION REV PER 0G 3A— 0 3 0 8 — 0 4 DATE DWN APVD 27APR04 JR KR D D SLOT ACCEPTS 0 . 5 1 - 0 . 6 4 m m

IGBT 1500v 50A

Abstract: IC tl 072 ixgf IXGF25N300 IGBT 1500V .50A pf98 338B2
Contextual Info: High Voltage IGBT IXGF25N300 VCES = 3000V = 27A IC25 VCE sat ≤ 3.0V For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V VGES

IGBT 1500v 50A

Abstract: IC tl 072 igbt 1500V
Contextual Info: High Voltage IGBT IXGF25N300 VCES = 3000V = 27A IC25 VCE sat ≤ 3.0V For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V VGES

Contextual Info: High Voltage IGBT VCES = 3000V IC25 = 27A VCE sat ≤ 3.0V IXGF25N300 For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V VGES

IGBT 1500v 50A

Abstract: IGBT 1500v 25A
Contextual Info: Advance Technical Information IXGF25N300 High Voltage IGBT VCES = 3000V = 27A IC25 VCE sat ≤ 3.0V For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 3000 V

BFC11

Contextual Info: lili i t t i lili SEME BFC11 LAB 4TH GENERATION MOSFET SOT-227 Package Outline. Dimensions in mm inches 11 8 (0 4 6 3 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS } I D(cont) 800V 27A ^DS(on) 0.30Q 'DSS Terminal 1 Terminal 3 Source 2* Gate

APT8030LVFR

Contextual Info: A d v a n ced APT8030LVFR po w er Te c h n o l o g y ' 800V POWER MOS V 27A 0.30011 FREDFET Power MOS V is a new generation of high voltage N-Channei enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

Contextual Info: 7 T H IS DRAW ING IS U N P U B L IS H E D . RE LEA S E D ALL COPYRIGHT - FOR 5 6 4 3 2 PU B LIC ATIO N RIG HTS R E S ER V ED . BY TYCO ELECTRONICS CORPORATION. REVISIONS LOC D IS T AD 00 LTR D E S C R IP T IO N J1 DATE DWN KK AEG 27AUG09 REVISED PER ECQ-09-020774

MOS 4016

Abstract: T4016B T40-16B
Contextual Info: A dvanced P ow er Te c h n o l o g y A P 400 ' 4016 T B V R 27A 0 160 2 V . Í POWER MOS V Power MOS V is a new generation of high voltage N-Channei enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

diode c248

Abstract: sef542 C246 SGSP381 SEF541 C-247 SEF543 C247 sgs*P381 C245
Contextual Info: S G S-THOMSON 0 7 E 1 | 7 ^ 3 1 2 3 ? 0 0 1 6 0 2 5 3 ' 73C 17522 D /T SEF541 SEFS42 SEFS43 N-CHANNEL POWER MÛS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS V D SS R D S ON) 60V 0.085 Q 27A 100 V/60V 0.11 24A SEF541 SEF542 These products are diffused multi-cell silicon gate

APT5018BLL

Abstract: APT5018SLL
Contextual Info: APT5018BLL APT5018SLL 500V 27A 0.180W POWER MOS 7TM BLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON

Contextual Info: APT5018BLL APT5018SLL 500V 27A 0.180W POWER MOS 7TM BLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON

Contextual Info: A d v a n ced P o w er Te c h n o l o g y APT8030JNFR ISOTOP* 800V 27A 0.30Q S U "UL Recognized" File No. E145592 S POWER MOS IVe N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V DSS All Ratings: T c = 25°C unless otherwise specified.

APT5018BFLL

Abstract: APT5018SFLL
Contextual Info: APT5018BFLL APT5018SFLL 500V 27A 0.180W POWER MOS 7TM FREDFET BLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON

Contextual Info: A dvanced P ow er Te c h n o lo g y • APT5020BNFR APT5022BNFR POWER MOS IV< 500V 500V 28A 0.20Q 27A 0.220 AVALANCHE RATED FREDFET N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol VDSS All Ratings: Tc = 25°C unless otherwise specified.