TKF CURVE Search Results

Contextual Info: TEPRO TYPE "TKW" / "TKF" ELECTRO TECHNIK SURFACE MOUNT RESISTORS FEATURES: Temperature coefficient to ± 2 ppm / °C Wirewound or Metal Film available Non Inductive windings available GENERAL SPECIFICATIONS: ENVIRONMENTAL PERFORMANCE: Standard temperature coefficients:

Contextual Info: TYPE "TKW" / "TKF ELECTRO TECHNIK SURFACE MOUNT RESISTORS FEATURES: Temperature coefficient to ± 2 PPM / °C Wirewound or Metal Film available Non Inductive windings available GENERAL SPECIFICATIONS: Standard temperature coefficients: ±90 PPM / °C Below 1.0 Ohm

tepro type s

Contextual Info: Sx TEPRO TYPE M TKWH/ "TKF" E L E C T R O T E C H N IK SURFACE MOUNT RESISTORS GENERAL SPECIFICATIONS Standard tem perature coefficients: ±90 PPM / °C Below 1.0 Ohm +50 PPM / °C 1.0 Ohm - 9.9 Ohm ±20 PPM / °C 10 Ohm and beyond Electrical: Power . 1 2 5 - 3 watts

Contextual Info: TEPRO TYPE “TKW’ / ‘TKF” ELECTRO TECHNIK SURFACE MOUNT RESISTORS FEATURES: Temperature coefficient to ±2 PPM / 00 Wirewound or Metal Film available Non Inductive windings available GENERAL SPECIFICATIONS: Standard temperature coefficients: ±90PPM /00 Below 1.0 Ohm

TKW 4

Contextual Info: TEPRO TYPE “TKW” / “TKF” ELECTRO TECHNIK SURFACE MOUNT RESISTORS GENERAL SPECIFICATIONS: Standard temperature coefficients: ±90ppm / °C Below 1.0Ω ±50ppm / °C 1.0Ω - 9.9Ω ±20ppm / °C 10Ω and beyond Electrical: Power .125 - 3 watts Resistance: 0.01 - 300 KΩ

Contextual Info: SSRAM AS5SS256K36 256K x 36 SSRAM PIN ASSIGNMENT Top View Flow-Through, Synchronous Burst SRAM FEATURES z z z z z z z z z z z OPTIONS z z MARKING -8.5* -10 DQ 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 80 79 78 77 76

Contextual Info: SSRAM AS5SS256K36 256K x 36 SSRAM PIN ASSIGNMENT Top View Flow-Through, Synchronous Burst SRAM FEATURES z z z z z z z z z z z OPTIONS z z MARKING -8.5* -10 DQ 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 80 79 78 77 76

Contextual Info: SSRAM AS5SS256K18 256K x 18 SSRAM PIN ASSIGNMENT Top View Synchronous Burst SRAM, Flow-Through 100-pin TQFP SA SA CE\ CE2 NC NC bwB\ BWa\ CE2\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ SA SA FEATURES • Timing 7.5ns/8ns/113 MHz 8.5ns/10ns/100 MHz 10ns/15ns/66 MHz

Contextual Info: SSRAM AS5SS256K18 256K x 18 SSRAM PIN ASSIGNMENT Top View Synchronous Burst SRAM, Flow-Through 100-pin TQFP SA SA CE\ CE2 NC NC bwB\ BWa\ CE2\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ SA SA FEATURES • Timing 7.5ns/8ns/113 MHz 8.5ns/10ns/100 MHz 10ns/15ns/66 MHz

fx040

Abstract: CSI03 UDP703102 TKF curve uPD703100GJ-8EU uPD703101GJ-8EU uPD70F3102GJ-8EU TI13
Contextual Info: Electrical Specifications Target V850E/MS1 SUD-T-3276-2 March 21,1997 Microcomputer Engineering Dep. Semiconductor Solutions Engineering Div. NEC Corporation V850E/MS1 Electrical Specifications (Target) The information in this document is subject to change without notice.

AS5SS256K18

Contextual Info: SSRAM AS5SS256K18 Austin Semiconductor, Inc. 256K x 18 SSRAM PIN ASSIGNMENT Top View Synchronous Burst SRAM, Flow-Through 100-pin TQFP SA SA CE\ CE2 NC NC bwB\ BWa\ CE2\ V DD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ SA SA FEATURES • Timing 7.5ns/8ns/113 MHz

Contextual Info: SSRAM AS5SS256K36 & AS5SS256K36A Austin Semiconductor, Inc. 256K x 36 SSRAM PIN ASSIGNMENT Top View Synchronous Burst SRAM FEATURES l l l l l l l l l l l OPTIONS MARKING l -8.5 -10 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56

Contextual Info: SSRAM Austin Semiconductor, Inc. 256K x 36 SSRAM PIN ASSIGNMENT Top View Flow-Through, Synchronous Burst SRAM 100-pin TQFP (DQ) (2-chip enable version, “A” indicator) FEATURES z z z z z z z z z z z OPTIONS MARKING DQ No. 1001 100-pin TQFP (DQ) (3-chip enable version, no indicator)

AS5SS256K36

Abstract: AS5SS256K36A 876-3210
Contextual Info: SSRAM AS5SS256K36 & AS5SS256K36A Austin Semiconductor, Inc. 256K x 36 SSRAM PIN ASSIGNMENT Top View Flow-Through, Synchronous Burst SRAM 100-pin TQFP (DQ) (2-chip enable version, “A” indicator) FEATURES ! ! ! ! ! ! ! ! ! ! ! OPTIONS MARKING DQ No. 1001

AS5SS256K18

Contextual Info: SSRAM Austin Semiconductor, Inc. 256K x 18 SSRAM PIN ASSIGNMENT Top View Synchronous Burst SRAM, Flow-Through SA SA CE\ CE2 NC MARKING -8* -9 -10 SA NC NC VDDQ V SS NC DQPa DQa DQa V SS VDDQ DQa DQa V SS NC VDD ZZ DQa DQa VDDQ V SS DQa DQa NC NC V SS VDDQ

AS5SS256K36

Abstract: AS5SS256K36A 876-3210
Contextual Info: SSRAM Austin Semiconductor, Inc. 256K x 36 SSRAM PIN ASSIGNMENT Top View Flow-Through, Synchronous Burst SRAM 100-pin TQFP (DQ) (2-chip enable version, “A” indicator) FEATURES z z z z z z z z z z z OPTIONS MARKING DQ No. 1001 100-pin TQFP (DQ) (3-chip enable version, no indicator)

AS5SS256K36

Abstract: AS5SS256K36A 198765-4 876-3210
Contextual Info: SSRAM AS5SS256K36 & AS5SS256K36A Austin Semiconductor, Inc. 256K x 36 SSRAM PIN ASSIGNMENT Top View Flow-Through, Synchronous Burst SRAM 100-pin TQFP (DQ) (2-chip enable version, “A” indicator) l l l l l l l l l l l l Organized 256K x 36 Fast Clock and OE\ access times

AS5SS256K36

Abstract: 43251 876-3210
Contextual Info: SSRAM Austin Semiconductor, Inc. 256K x 36 SSRAM PIN ASSIGNMENT Top View Flow-Through, Synchronous Burst SRAM FEATURES z z z z z z z z z z z OPTIONS MARKING Timing 8.5ns/10ns/100MHz 10ns/15ns/66MHz z Packages 100-pin TQFP (2-chip enable) z Pinout 3-chip Enable

philips ET-E 60

Abstract: C561 EC56
Contextual Info: DISC-SEAL TRIODE for' use as general purpose low level amplifier, especially designed for use as broad-hand microwave amplifier in grounded grid circuits TBIODE A DISQUES pour utilisation^ comme amplificatrice à faible niveau pour emplois généraux, spécialement

123D

Abstract: AS5SS128K36
Contextual Info: SRAM Austin Semiconductor, Inc. GENERAL DESCRIPTION 128K x 36 SSRAM The Austin Semiconductor, Inc. Zero Bus Latency SRAM family employs high-speed, low-power CMOS designs using an advanced CMOS process. ASI’s 4Mb ZBL SRAMs integrate a 128K x 36 SRAM core

Contextual Info: SRAM Austin Semiconductor, Inc. GENERAL DESCRIPTION 128K x 36 SSRAM The Austin Semiconductor, Inc. Zero Bus Latency SRAM family employs high-speed, low-power CMOS designs using an advanced CMOS process. ASI’s 4Mb ZBL SRAMs integrate a 128K x 36 SRAM core

123D

Abstract: AS5SS128K36
Contextual Info: SSRAM Austin Semiconductor, Inc. GENERAL DESCRIPTION 128K x 36 SSRAM The Austin Semiconductor, Inc. Zero Bus Latency SRAM family employs high-speed, low-power CMOS designs using an advanced CMOS process. ASI’s 4Mb ZBL SRAMs integrate a 128K x 36 SRAM core

T-989

Abstract: 32NC2A B500 stub tuner waveguide L-6S43A
Contextual Info: T-989 From- 14:25 08-28-01 Electron Devices REVISION S SPEOIFICATION SHEESPECPECIFICATION THE PROVISIONS - TYPE NO: L-6S43A EFFECTIVE 7-z_-'9/ APPLY TO THIS OF THE LATEST ISSUE OF MIL-E-I F-534 P.02 OF SHEET SPECIFICATION B500 MHz to 9600 MHz, forced ,r DESCRIPTION: Magnetron, pulsed, 65 kWpeak power, mechanically tunable

TDA1519Q

Abstract: TDA1519BQ TDA1519 equivalent TDA1519AQ TDA1516 equivalent TDA1516AQ TDA1517 equivalent TDA1517B A1516 TDA1517BQ
Contextual Info: Laboratory Report Philips Semiconductors Audio/Radio Products Audio power ICs for car-radio NBA9001 Authors: J.J. Sips, C. v.d. Wolf, C. Joosse 1. INTRODUCTION A new range of audio power ICs for car-radio has been released which offers customers a lot of advantages.