TK9J90E Search Results

TK9J90E Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
TK9J90E		Toshiba	Japanese - Transistors - Mosfets	Original	PDF	335.36KB	9
TK9J90E		Toshiba	Transistors - Mosfets	Original	PDF	236.45KB	9
TK9J90E,S1E		Toshiba	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 900V TO-3PN	Original	PDF		9

TK9J90E Price and Stock

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Toshiba America Electronic Components


Toshiba America Electronic Components TK9J90E,S1E MOSFET N-CH 900V 9A TO3P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TK9J90E,S1E	Tube			1	1 $3.86 10 $3.86 100 $1.84 1000 $1.40 10000 $1.40	Buy Now
Avnet Americas	TK9J90E,S1E	Tray		16 Weeks	25	1 - 10 - 100 $1.80 1000 $1.40 10000 $1.40	Buy Now
Mouser Electronics	TK9J90E,S1E		3,780			1 $3.78 10 $2.23 100 $1.84 1000 $1.40 10000 $1.40	Buy Now
Toshiba America Electronic Components TK9J90E,S1E(S Trans MOSFET N-CH Si 900V 9A 3-Pin(3+Tab) TO-3PN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	TK9J90E,S1E(S		25		5	1 - 10 $2.04 100 $1.83 1000 $1.71 10000 $1.71	Buy Now
Arrow Electronics	TK9J90E,S1E(S		25	52 Weeks	1	1 $2.29 10 $2.04 100 $1.83 1000 $1.71 10000 $1.71	Buy Now
TME	TK9J90E,S1E(S		121		1	1 $4.14 10 $3.72 100 $2.96 1000 $2.96 10000 $2.96	Buy Now

TK9J90E Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: TK9J90E MOSFETs Silicon N-Channel MOS π-MOS TK9J90E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.0 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.9 mA)	Original	TK9J90E	PDF
Contextual Info: TK9J90E MOSFET シリコンNチャネルMOS形 π-MOS TK9J90E 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 1.0 Ω (標準) (2) 漏れ電流が低い。: IDSS = 10 µA (最大) (VDS = 720 V) (3)	Original	TK9J90E	PDF
Contextual Info: TK9J90E MOSFETs Silicon N-Channel MOS π-MOS TK9J90E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.0 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.9 mA)	Original	TK9J90E	PDF