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    TK7J90E Search Results

    TK7J90E Datasheets (1)

    Toshiba
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    TK7J90E,S1E
    		Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 900V TO-3PN Original PDF 9
    SF Impression Pixel

    TK7J90E Price and Stock

    Toshiba America Electronic Components

    Toshiba America Electronic Components TK7J90E-S1E

    MOSFET N-CH 900V 7A TO3P
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    Toshiba America Electronic Components TK7J90E,S1E(S

    Trans MOSFET N-CH Si 900V 7A 3-Pin(3+Tab) TO-3PN
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    TK7J90E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: TK7J90E MOSFETs Silicon N-Channel MOS π-MOS TK7J90E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.6 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.7 mA)


    Original     		TK7J90E PDF

    Contextual Info: TK7J90E MOSFETs Silicon N-Channel MOS π-MOS TK7J90E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.6 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.7 mA)


    Original     		TK7J90E PDF