Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TK7J90E Search Results

    TK7J90E Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    TK7J90E,S1E
    		Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 900V TO-3PN Original PDF 9
    SF Impression Pixel

    TK7J90E Price and Stock

    Toshiba America Electronic Components

    Toshiba America Electronic Components TK7J90E,S1E

    MOSFET N-CH 900V 7A TO3P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TK7J90E,S1E Tube 23 1
    • 1 $3.69
    • 10 $3.69
    • 100 $1.92
    • 1000 $1.36
    • 10000 $1.35
    		Buy Now
    Avnet Americas TK7J90E,S1E Tray 16 Weeks 25
    • 1 -
    • 10 -
    • 100 $1.88
    • 1000 $1.35
    • 10000 $1.35
    		Buy Now
    Mouser Electronics TK7J90E,S1E 45
    • 1 $3.62
    • 10 $1.97
    • 100 $1.96
    • 1000 $1.35
    • 10000 $1.35
    		Buy Now

    Toshiba America Electronic Components TK7J90E,S1E(S

    Mosfet, N-Ch, 900V, 7A, To-3P; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:7A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; No. Of Pins:3Pinsrohs Compliant: Yes |Toshiba TK7J90E, S1E(S
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark TK7J90E,S1E(S Bulk 93 1
    • 1 $2.82
    • 10 $2.48
    • 100 $2.10
    • 1000 $1.83
    • 10000 $1.55
    		Buy Now
    TME TK7J90E,S1E(S 1
    • 1 $2.38
    • 10 $1.89
    • 100 $1.59
    • 1000 $1.42
    • 10000 $1.42
    		Get Quote
    EBV Elektronik TK7J90E,S1E(S 19 Weeks 25
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    TK7J90E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: TK7J90E MOSFETs Silicon N-Channel MOS π-MOS TK7J90E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.6 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.7 mA)


    Original     		TK7J90E PDF

    Contextual Info: TK7J90E MOSFETs Silicon N-Channel MOS π-MOS TK7J90E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.6 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.7 mA)


    Original     		TK7J90E PDF