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    TK7J90E Search Results

    TK7J90E Datasheets (1)

    Toshiba
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    TK7J90E,S1E
    		Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 900V TO-3PN Original PDF 9
    SF Impression Pixel

    TK7J90E Price and Stock

    Toshiba America Electronic Components

    Toshiba America Electronic Components TK7J90E,S1E

    MOSFETs PLN MOS 900V 2000m (VGS=10V) TO-3PN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics () TK7J90E,S1E 107
    • 1 $3.79
    • 10 $2.06
    • 100 $1.91
    • 1000 $1.35
    • 10000 $1.35
    		Buy Now
    TK7J90E,S1E 72
    • 1 $3.83
    • 10 $2.13
    • 100 $1.79
    • 1000 $1.35
    • 10000 $1.35
    		Buy Now

    Toshiba America Electronic Components TK7J90E,S1E(S

    Trans MOSFET NCH 900V 7A 3Pin TO3PN Tube (Alt: TK7J90E,S1E(S)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    EBV Elektronik TK7J90E,S1E(S 19 Weeks 25
    • 1 -
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    TK7J90E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: TK7J90E MOSFETs Silicon N-Channel MOS π-MOS TK7J90E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.6 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.7 mA)


    Original     		TK7J90E PDF

    Contextual Info: TK7J90E MOSFETs Silicon N-Channel MOS π-MOS TK7J90E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.6 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.7 mA)


    Original     		TK7J90E PDF