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TK7J90E Datasheets (1)

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Toshiba

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
TK7J90E,S1E		Toshiba	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 900V TO-3PN	Original	PDF		9

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Toshiba America Electronic Components


Toshiba America Electronic Components TK7J90E,S1E MOSFET N-CH 900V 7A TO3P
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DigiKey	TK7J90E,S1E	Tube	26		1	1 $3.34 10 $3.34 100 $1.50 1000 $1.22 10000 $1.22	Buy Now
Avnet Americas	TK7J90E,S1E	Tray		16 Weeks	25	1 - 10 - 100 $1.48 1000 $1.40 10000 $1.40	Buy Now
Mouser Electronics	TK7J90E,S1E		98			1 $3.54 10 $1.77 100 $1.62 1000 $1.62 10000 $1.62	Buy Now
Toshiba America Electronic Components TK7J90E,S1E(S Trans MOSFET N-CH Si 900V 7A 3-Pin(3+Tab) TO-3PN
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Verical	TK7J90E,S1E(S		2		2	1 - 10 $2.10 100 $1.80 1000 $1.57 10000 $1.32	Buy Now
Arrow Electronics	TK7J90E,S1E(S		2		1	1 $2.36 10 $2.10 100 $1.80 1000 $1.57 10000 $1.32	Search Findchips
Newark	TK7J90E,S1E(S	Bulk	615		1	1 $2.87 10 $2.51 100 $2.10 1000 $1.81 10000 $1.52	Buy Now
TME	TK7J90E,S1E(S				1	1 $2.37 10 $1.89 100 $1.58 1000 $1.42 10000 $1.42	Get Quote
EBV Elektronik	TK7J90E,S1E(S			19 Weeks	25	1 - 10 - 100 - 1000 - 10000 -	Get Quote

TK7J90E Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: TK7J90E MOSFETs Silicon N-Channel MOS π-MOS TK7J90E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.6 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.7 mA)	Original	TK7J90E	PDF
Contextual Info: TK7J90E MOSFETs Silicon N-Channel MOS π-MOS TK7J90E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.6 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.7 mA)	Original	TK7J90E	PDF