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    TK10V60W Search Results

    TK10V60W Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    TK10V60W,LVQ
    Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 9.7A 5DFN Original PDF 10
    SF Impression Pixel

    TK10V60W Price and Stock

    Toshiba America Electronic Components

    Toshiba America Electronic Components TK10V60W,LVQ

    MOSFET N-CH 600V 9.7A 4DFN
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    DigiKey TK10V60W,LVQ Reel 2,500
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    Avnet Americas TK10V60W,LVQ Reel 16 Weeks 2,500
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    Mouser Electronics TK10V60W,LVQ
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    Toshiba America Electronic Components TK10V60W,LVQ(S

    Mosfet, N-Ch, 600V, 9.7A, Dfn; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:9.7A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3.7V Rohs Compliant: Yes |Toshiba TK10V60W, LVQ(S
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    Newark TK10V60W,LVQ(S Cut Tape 4,795 1
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    EBV Elektronik TK10V60W,LVQ(S 23 Weeks 2,500
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    TK10V60W Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: TK10V60W MOSFETs Silicon N-Channel MOS DTMOS TK10V60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching


    Original
    TK10V60W PDF

    Contextual Info: TK10V60W MOSFETs Silicon N-Channel MOS DTMOS TK10V60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching


    Original
    TK10V60W PDF