TK 19 209 Search Results

VEB mikroelektronik

Abstract: mikroelektronik DDR Widerstandsnetzwerke aus dem Kombinat Keramische Werke Hermsdorf VEB Keramische Werke keramische Werke Hermsdorf hermsdorf keramische Werke Hermsdorf 3677 Deutschen Demokratischen Republik Kombinat VEB Keramische Werke DDR Schaltkreise
Contextual Info: Widerstandsnetzwerke ProduktUbersicht Resistor Networks Products catalog Die vorgestellte Typenauswahl stellt einen Querschnitt unseres umfangreichen Sorti­ ments dar. Die verbindlichen Angaben zu den aufgeführten und weiteren Typen kön­ nen unseren „Technischen Lieferbedingun­

SMD transistor M05

Abstract: smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR
Contextual Info: NEC XXXXXXXXXX RF & Wireless Semiconductors 2010 2 P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories serves designers, OEMs and contract manufacturers in the RF & Wireless, Mobilecomm, Multimedia, Broadband Communications, Industrial Control, and Automated Test Equipment ATE

SMD M05 sot23

Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
Contextual Info: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly

Contextual Info: TOSHIBA TC55YD1837YB-333,-250 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 524,288-WORD BY 36-BIT SYNCHRONOUS STATIC RAM SILICON GATE CMOS SigmaRAM, 21x1 Dp DESCRIPTION The TC55YD1837YB is a 18,874,368-bit synchronous I/O common Sigma SDR static random access memory

Contextual Info: TOSHIBA TC55YD1873YB-333,-250 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 262,144-WORD BY 72-BIT SYNCHRONOUS STATIC RAM SILICON GATE CMOS SigmaRAM, 21x1 Dp DESCRIPTION The TC55YD1873YB is a 18,874,368-bit synchronous I/O common Sigma SDR static random access memory

Contextual Info: An IXYS Company Provisional Data Data Sheet Issue:- 1  WESTCODE Date:- 2 Oct, 2003 Absolute Maximum Ratings VOLTAGE RATINGS Repetitive peak reverse voltage, note 1 VRSM Non-repetitive peak reverse voltage, (note 1)   VRRM   Extra Fast Recovery Diode

tk 19 209

Abstract: atmel 0635 IC MC 14017 B
Contextual Info: jflmëE W IR E L E S S * i/C Packaging and Packing Information Atmel Wireless & Microcontrollers Standard Bar-Code Labels The Atmel Wireless & Microcontrollers standard bar-code labels are printed at final packing areas. The labels are on each packing unit and contain Atmel Wireless & Microcontrollers’ specific data.

F1500NC

Abstract: calculation of diode snubber westcode fast recovery diode F1500NC250 50V 2000A diode
Contextual Info: An IXYS Company Provisional Data Data Sheet Issue:- 1  WESTCODE Date:- 2 Oct, 2003 Absolute Maximum Ratings VOLTAGE RATINGS   Extra Fast Recovery Diode Type F1500NC250 MAXIMUM LIMITS UNITS Repetitive peak reverse voltage, note 1 2500 V VRSM Non-repetitive peak reverse voltage, (note 1)

Diode KD 514

Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Contextual Info: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381

MCL 1 034

Abstract: TC55YD1873YB-333
Contextual Info: TOSHIBA TENTATIVE TC55YD1873YB-333,-250 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 2 6 2 ,1 4 4 - W O R D BY 72-B IT S Y N C H R O N O U S STATIC R A M SILICON GATE CMOS S ig m a R A M , 21 x1 D p DESCRIPTION The TC55YD1873YB is a 18,874,368-bit synchronous I/O common Sigma SDR static random access memory

CQ226

Abstract: tk 69 K7Z167285A
Contextual Info: K7Z167285A Preliminary 256Kx72 Double Late Write SigmaRAMTM Document Title 256Kx72 Double Late Write SigmaRAM TM Revision History Rev. No. 0.0 0.1 0.2 0.3 History Draft Date Remark 1. 1. 1. 1. November 2, 2000 March 30, 2001 May 16, 2001 July 18, 2001 Preliminary

CP12

Abstract: CP14 CP16 CP18 62944
Contextual Info: Order this data sheet by 62941D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Military 6294 16K x 4 “BitSynchronous Static RAM with Output Registers and Output Enable The 6294 is a 65,536 bit synchronous random access memory organized as 16,384 words of 4 bits, fabricated using Motorola’s second-generation high-petiormance siliconThe device integrates input registers, high speed

V50221

Abstract: CI 7912 Ru 94 VO
Contextual Info: .560 -14.a? EUEOTOMCS. Droits de reproduction BERG ELECTRONICS NC. .500 Propriete d« 8ERC t DF TERMINAL .«» .107 £.72 REF r o m NOTES> • ‘• ■ « t T LATCH SWINGS CLOSED AFTER TERMINATION MAINTAINING A MAX. OVER ALL HEIGHT OF .100/2.54. 2. MOLDING MAT'L,POLYPROPYLENE,FLAME RETARDANT PER UL 9 4 V - 0

Contextual Info: MOTOROLA Order this document by MCM67M618B/D SEMICONDUCTOR TECHNICAL DATA MCM67M618B 64K x 18 Bit BurstRAM Synchronous Fast Static RAM With Burst Counter and Self-Timed Write The MCM67M618B is a 1,179,648 bit synchronous static random access memory designed to provide a burstable, high-performance, secondary cache

Contextual Info: TOSHIBA TENTATIVE TC55YD1837YB-333,-250 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 524,288-WORD BY 36-BIT SYNCHRONOUS STATIC RAM SILICON GATE CMOS SigmaRAM, 21x1 Dp DESCRIPTION The TC55YD1837YB is a 18,874,368-bit synchronous I/O common Sigma SDR static random access memory

DG12

Contextual Info: A ¡a. «te. *-3 DEGSON ELECTRONICS CO., LTD. DEGSON UM C€ PC, UL94V-2 Wils], 1,2M UxIÎl ÍR, M4 M #: È1ÉÌ: * 300V/30A -40°C~+80°C AC2000V /1 Min 1000M Q /DC500V 18-10AWG 1.2N.m 10.6Lb.in iÆÆffeJÏ/ftSÎL: m m tK : DG12 11x P-1 +23 IT DG12 í Í C

MTL ICC 311

Abstract: HDSP-5621 HDSP-5623 LN526RGA SL-2199 SL-2225 hp 5082-7756
Contextual Info: - 84- 1 & tíü ! 2È J l 5IJ •it ¥ É’J & ti « >CTí=7? H D SP-5621 H D SP-5623 L N 526RG A - HP & T ft 14 Jft [Ta= 2 o O «ist;!: If Vjf i V i im A : 3 30 0.56 G aP S i! m m - fcJ£ W.i$ R liŒ A/. A X Ir Vjr Iy If Ir Ir nm '' !nm ' ;m A ; ¡m cd ' ! rn A 1 i. V j (m A : '.„A '

DG65H-B

Abstract: s110x
Contextual Info: A ¡a . « te . * - 3 DEGSON ELECTRONICS CO., LTD. DEGSON fflfh LJ U [U I PA66, UL94V-0 im-F: füîpi]« 1.0Ü tixtH È1ÉÌ: «9. M4 f t H iÆÆffeJÏ/ftSÎL: 300V/20A -40°C~+105°C AC2000V / 1 Min 500MQ/DC500V 22-12AWG U m m tK : DG65H-B 1.2N.m IT í ÍC

Contextual Info: A ¡a. «te. * -3 Sa Mi DEGSON ELECTRONICS CO., LTD. DEGSON ^ UM PA66+23%GF, UL94V-0 Wils] i 0.8jlpî tlxtH «9. M4 fSH fflfh W » C € im-F: È1ÉÌ: I 300V/20A -40°C~+105°C AC2000V /1 Min 500MQ/DC500V 22-12AWG 1,2N.m 10.6Lb.in m m tK : DG48R-A IT Poles

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Contextual Info: A ¡a. Sa Mi ^ «te . * - 3 DEGSON ELECTRONICS CO., LTD. DEGSON UM tWus C € PA66, UL94V-0 füîpi] « 1.0Ü tixtH «9. M4 f t H fflfh im-F: È1ÉÌ: * ' * p p 300V/20A -40°C~+105°C AC2000V /1 Min 500MQ/DC500V 22-12AWG 1.2N.m 10.6Lb.in m m tK: DG65R-B

Contextual Info: A ¡a . « te . * - 3 DEGSON ELECTRONICS CO., LTD. DEGSON Sa Mi ^ UM PA66, UL94V-0 Wils] i 0.8jipi tlxtH «9. M4 fS H f f lf h tW us C € im-F: È1ÉÌ: 300V/25A -40°C~+105°C AC2000V /1 Min 500MQ/DC500V 22-12AWG 1.2N.m 10.6Lb.in m m tK : DG45S-A "S"=9.5x P-1

DG13

Contextual Info: A ¡a . « te . * -3 DEGSON ELECTRONICS CO., LTD. DEGSON C€ UM PC, UL94V-2 Wils], 1,2 M UxIÎl ÍR, M4 M#: È1ÉÌ: I 300V/30A -40°C~+80°C AC2000V /1 Min 1000M Q / DC500V 18-10AWG 1.2N.m 10.6Lb.in iÆÆffeJÏ/fiLSÎL: m m tK : DG13 11x P-1 +23 IT I I í

Contextual Info: A # at * ¿ * 3 - * ^ DEGSON ELECTRONICS CO., LTD. DEGSON MM PA66, UL94V-0 üîîls] « 0.8 5 ÍIxílS «9. M4 & H fflfh im-F: í f ÉÍ: •m * ' * ' f 7* 300V/25A -40°C~+105°C AC2000V /1 Min 500MQ/DC500V 22-12AWG 1.2N.m 10.6Lb.in m m tK : DG45R-B "S"=9.5x P-1)