TJ B C Search Results

409CNQ135

Abstract: TO-244AB 409c 409CNQ150 IRFP460
Contextual Info: Bulletin PD-20723 rev. B 07/01 409CNQ. SERIES SCHOTTKY RECTIFIER 400 Amp TO-244AB Description/Features Major Ratings and Characteristics Characteristics IF AV Rectangular waveform VRRM range IFSM @ tp = 5 µs sine VF TJ @ 200Apk, TJ=125°C 409CNQ. Units

403CMQ

Abstract: 403CMQ080 403CMQ100 IRFP460 PD-20726
Contextual Info: Bulletin PD-20726 rev. B 08/01 403CMQ. Series SCHOTTKY RECTIFIER 400 Amp TO-244AB Isolated Description/Features Major Ratings and Characteristics Characteristics IF AV Rectangular waveform VRRM Range IFSM @ tp = 5 µs sine VF @ 200Apk, TJ=125°C TJ range

401CMQ

Abstract: 401CMQ035 401CMQ040 401CMQ045 IRFP460
Contextual Info: Bulletin PD-20735 rev. B 08/01 401CMQ. SERIES SCHOTTKY RECTIFIER 400 Amp TO-244AB Isolated Major Ratings and Characteristics Characteristics IF AV Rectangular waveform VRRM range IFSM @ tp = 5 µs sine VF @ 200 Apk, TJ = 125°C TJ Description/Features 401CMQ. Units

180NQ

Abstract: 180NQ035 180NQ040 180NQ045 40HFL40S02 IRFP460
Contextual Info: PD-2.227 rev. B 12/97 180NQ. SERIES SCHOTTKY RECTIFIER 180 Amp Major Ratings and Characteristics Characteristics IF AV Rectangular waveform VRRM range IFSM @ tp = 5 µs sine VF @ 180Apk, TJ=125°C TJ range Description/Features 180NQ. Units 180 A 35 to 45

180NQ

Contextual Info: PD-2.227 rev. B 12/97 180NQ. SERIES SCHOTTKY RECTIFIER 180 Amp Major Ratings and Characteristics Characteristics IF AV Rectangular waveform VRRM range IFSM @ tp = 5 µs sine VF @ 180Apk, TJ=125°C TJ range Description/Features 180NQ. Units 180 A 35 to 45

marking codes ER diode SMB

Abstract: 10BQ030TR part marking ab 10BQ030 AN-994
Contextual Info: Bulletin PD-20708 rev. B 08/00 10BQ030 1 Amp SCHOTTKY RECTIFIER SMB Description/Features Major Ratings and Characteristics Characteristics 10BQ030 Units IF AV Rectangular waveform 1.0 A VRRM 30 V IFSM @ tp= 5 ms sine 430 A VF @ 1.0Apk, TJ= 125°C 0.30 V TJ

Contextual Info: Preliminary Technical Information TrenchMVTM Power MOSFET VDSS ID25 IXTN200N10T RDS on N-Channel Enhancement Mode Avalanche Rated miniBLOC, SOT-227 B E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ

Contextual Info: H b û b 2 2 b 0 0 0 1 Ö 0 3 ^21 I IX Y ID IXYS IG B T w ith D io d e ÌX S N 3 0 N 10 0 A U 1 CES High Short Circuit SOA Capability CE sat = 34 A = 1000 V =4V 2 é * 'T i Symbol Test Conditions V«s Tj = 25°C to 150°C 1000 V v«* Tj = 25°C to 150°C; RGE= 1 M£2

LC4128C-75TN128

Abstract: LC4064V-75TN10 LC4256V-10TN176 LC4064V-75TN 4064V LC4256B-75FT256AC 5T48 LC4256V-75FT256B LC4064V-25TN LC4256C-5F256B
Contextual Info: ispMACH 4000V/B/C/Z Family 3.3V/2.5V/1.8V In-System Programmable SuperFAST TM High Density PLDs May 2009 Data Sheet DS1020  Broad Device Offering Features • Multiple temperature range support – Commercial: 0 to 90°C junction Tj – Industrial: -40 to 105°C junction (Tj)

95SQ015

Abstract: IRFP460
Contextual Info: Bulletin PD-2.273 rev. B 02/01 95SQ015 9 Amp SCHOTTKY RECTIFIER Description/Features Major Ratings and Characteristics Characteristics 95SQ015 Units IF AV Rectangular 9 A VRRM 15 V IFSM @ tp = 5 µs sine 2900 A VF @ 9 Apk, TJ = 75°C 0.25 V TJ range - 55 to 100

Contextual Info: ispMACH 4000V/B/C/Z Family 3.3V/2.5V/1.8V In-System Programmable SuperFAST TM High Density PLDs November 2013 Data Sheet DS1020  Broad Device Offering Features • Multiple temperature range support – Commercial: 0 to 90°C junction Tj – Industrial: -40 to 105°C junction (Tj)

FTBGA 256

Abstract: Lattice ispmach LC4064V LC4032V-10TN48I LC4256V-75FTN256BC 4000B AEC-Q100 DS1020 TN1004 LC4064V-75TN44C LC4064V-75TN44I
Contextual Info: ispMACH 4000V/B/C/Z Family 3.3V/2.5V/1.8V In-System Programmable SuperFAST TM High Density PLDs May 2009 Data Sheet DS1020  Broad Device Offering Features • Multiple temperature range support – Commercial: 0 to 90°C junction Tj – Industrial: -40 to 105°C junction (Tj)

75n120

Contextual Info: □ IX Y S High Voltage IGBT IXDN 75N120 1200 V 150 A 2.2 V V CES v I C25 CE sat typ Short Circuit S O A Capability Square R B SO A miniBLOC, SOT-227 B TO Preliminary Data E153432 E Symbol Conditions VcES Tj = 25°C to 150°C 1200 V VcCR Tj = 25°C to 150°C; Rge = 20 kQ

1N5817

Abstract: DO-204AL
Contextual Info: Bulletin PD-20646 rev. B 05/02 1N5817 SCHOTTKY RECTIFIER 1.0 Amp Major Ratings and Characteristics Description/Features Characteristics 1N5817 Units IF AV Rectangular 1.0 A VRRM 20 V IFSM @ tp = 5 µs sine 240 A VF @ 1 Apk, TJ = 25°C 0.45 V TJ range - 65 to 150

7.5KW mitsubishi motor wiring

Abstract: PM50RLB120
Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM50RLB120 FLAT-BASE TYPE INSULATED PACKAGE PM50RLB120 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of

E80276

Abstract: PM50CLB060
Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM50CLB060 FLAT-BASE TYPE INSULATED PACKAGE PM50CLB060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of

PM50CLA060

Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM50CLA060 FLAT-BASE TYPE INSULATED PACKAGE PM50CLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of

PM50RLB060

Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM50RLB060 FLAT-BASE TYPE INSULATED PACKAGE PM50RLB060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of

5.5KW motor wiring diagram

Abstract: PM75CLA060 mitsubishi IGBT Modules
Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM75CLA060 FLAT-BASE TYPE INSULATED PACKAGE PM75CLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of

LC4064V75TN100C

Abstract: LC4128V-75TN100C LC4064V-75TN48C LC4064V-75TN44C LC4064V LC4032V-5TN44C LC4064V-5TN44C lc4064v-25tn100c 132csBGA LC4128V-27TN100C
Contextual Info: ispMACH 4000V/B/C/Z Family 3.3V/2.5V/1.8V In-System Programmable SuperFAST TM High Density PLDs Coolest Power C Features Data Sheet DS1020 TM • Broad Device Offering • Multiple temperature range support – Commercial: 0 to 90°C junction Tj – Industrial: -40 to 105°C junction (Tj)

PM75RLB060

Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM75RLB060 FLAT-BASE TYPE INSULATED PACKAGE PM75RLB060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of

11KW 3 phase electric motor

Abstract: 11kw 11KW motor DC servo resistores PM75RLA120 power inverter block diagram
Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM75RLA120 FLAT-BASE TYPE INSULATED PACKAGE PM75RLA120 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of

PM25CLB120

Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM25CLB120 FLAT-BASE TYPE INSULATED PACKAGE PM25CLB120 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of

PM75CLB060

Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM75CLB060 FLAT-BASE TYPE INSULATED PACKAGE PM75CLB060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of