TJ 8050 Search Results

80508

Abstract: TO-3P weight IXTH280N055T IXTQ 280N055T N-channel MOSFET to-247 50a IXTQ280N055T 280N055T
Contextual Info: TrenchMVTM Power MOSFET IXTH280N055T IXTQ280N055T VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 55V = 280A Ω ≤ 3.2mΩ TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 55 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ

Contextual Info: TrenchMVTM Power MOSFET VDSS ID25 IXTH280N055T IXTQ280N055T RDS on N-Channel Enhancement Mode Avalanche Rated = 55V = 280A Ω ≤ 3.2mΩ TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 55 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ

aegis A1B

Abstract: aegis A1A aegis A2a aegis a2b aegis A1B 80 DO-205AA aegis A1A aegis 600/diode aegis a2b
Contextual Info: AEGIS SEMICONDUTORES LTDA. A1A:100.XX VOLTAGE RATINGS Part Number VRRM , VR V rep. peak reverse voltage This datasheet applies to: Max. VRSM , VR (V) Max. nonrep. peak reverse voltage O O Metric thread: A1A:100.XX, A1B:100.XX O TJ = 0 to 180 C TJ = -40 to 0 C

Contextual Info: GenX3TM 300V IGBT IXGA42N30C3 VCES IC110 VCE sat tfi typ IXGH42N30C3 IXGP42N30C3 High Speed PT IGBTs for 50-150kHz switching = = ≤ = 300V 42A 1.85V 65ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

IXGH42N30C3

Abstract: 80508 200V TO-247 42A70
Contextual Info: GenX3TM 300V IGBT IXGA42N30C3 VCES IC110 VCE sat tfi typ IXGH42N30C3 IXGP42N30C3 High Speed PT IGBTs for 50-150kHz switching = = ≤ = 300V 42A 1.85V 65ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

8050SS

Abstract: transistor 8050ss 8050SS Datasheet 8050ss TRANSISTOR equivalent 8050S 8050ss TRANSISTOR
Contextual Info: 8050SS 8050SS TRANSISTOR NPN TO-92 FEATURES Power dissipation PCM: 1 1. EMITTER W (Tamb=25 ) Collector current ICM: 2. COLLECTOR 1.5 A 3. BASE Collector-base voltage V(BR)CBO: 40 V 1 2 3 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

8050S Transistor

Abstract: 8050s ic 8050s 8050s equivalent 8050s* Transistor
Contextual Info: 8050S 8050S TRANSISTOR NPN TO-92 FEATURES Power dissipation PCM: 1. EMITTER 0.625 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 0.5 A Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range 3. BASE 1 2 3 TJ, Tstg: -55℃ to +150℃

PH150F280-5

Abstract: anemometer haa-146 heatsink PH150F PH50S HAA-083 air cooled heatsink PH75F PH75S
Contextual Info: PH-SERIES Thermal Design 1. THERMAL DESIGN • STEP 1 To ensure proper operation of power module, Determine the required output power Pout it is necessary to keep baseplate temperature and ambient temperature (TJ. within the allowable temperature limit. The

XC90

Contextual Info: in tj 82355 BUS MASTER INTERFACE CONTROLLER BMIC • Designed for use in 32-Bit EISA Bus Master Expansion Board Designs — Integrates Three Interfaces (EISA, Local CPU, and Transfer Buffer) ■ Supports 16- and 32-Bit Burst Transfers — 33 Mbytes/Sec Maximum Data

diodes siemens

Contextual Info: SIEMENS AK TIE NGESELLSCHAF SIE ]> • flBBSbOS ÜG42212 MIM M S I E G SIEMENS Schottky-Dioden Schottky Diodes Metallgehäuse Metal Package Typ Type '/ rrm V /fav A ^FM V /rm Tj max ma °c Bestellnummer Ordering code Gehäuse Package Bild Figure 5 SBR 3050

TOSHIBA TV SMPS

Abstract: RPER11 SI-8050HFE FMB-G16L G746 RK16 SC102 YG6260
Contextual Info: SI-8050HFE DC-to-DC Step-Down Converter Features and Benefits Description ▪ 5.5 A output current supplied in a small, through-hole mount power package ▪ High efficiency: 83% at VIN = 15 V, IO = 3.0 A,VO = 5 V ▪ Requires only five external components optional soft

Contextual Info: SI-8050HFE DC-to-DC Step-Down Converter Features and Benefits Description 5.5 A output current supplied in a small, through-hole mount power package High efficiency: 83% at VIN = 15 V, IO = 3.0 A,VO = 5 V Requires only five external components optional soft

TOSHIBA TV SMPS

Abstract: 08K1 TO-220F-5 YG6260 G746 RK16 SC102 SI-8050TFE shinetsu G746 rohs circuit diagram electronic choke components name
Contextual Info: SI-8050TFE DC-to-DC Step-Down Converter Features and Benefits Description ▪ 1.5 A output current supplied in a small, through-hole mount power package ▪ High efficiency: 81% at VIN = 15 V, IO = 0.5 A,VO = 5 V ▪ Requires only four external components optional soft

G746 rohs

Abstract: TO-220F-5 SI-8050TFE
Contextual Info: SI-8050TFE DC-to-DC Step-Down Converter Features and Benefits Description ▪ 1.5 A output current supplied in a small, through-hole mount power package ▪ High efficiency: 81% at VIN = 15 V, IO = 0.5 A,VO = 5 V ▪ Requires only four external components optional soft

G746

Abstract: SC102 SI-8000JF SI-8050JD SI-8050JF Choke Coil Winding buck
Contextual Info: SI-8050JF Data Sheet 27469.32* ih ng rs tc lato i Sw egu R Step-Down to 5.0 V, 1.5 A, DC/DC Converter Designed to meet high-current requirements at high efficiency in industrial and consumer applications; embedded core, memory, or logic supplies; TVs, VCRs, and office or telecommunications equipment, the

8050j

Abstract: SI-8050JD G746 SC102 SI-8000JF SI-8050JF SI8050J
Contextual Info: SI-8050JF Data Sheet 27469.32 ih ng rs tc lato i Sw egu R Step-Down to 5.0 V, 1.5 A, DC/DC Converter Designed to meet high-current requirements at high efficiency in industrial and consumer applications; embedded core, memory, or logic supplies; TVs, VCRs, and office or telecommunications equipment, the

8050jd

Abstract: SI-8050JD-TL SFPB-66 SI-8000JD SI-8050JD SI-8050JF SI8050
Contextual Info: SI-8050JD Data Sheet 27469.31* ih ng rs tc lato i Sw egu R Step-Down to 5.0 V, 1.5 A, DC/DC Converter Designed to meet high-current requirements at high efficiency in industrial and consumer applications; embedded core, memory, or logic supplies; TVs, VCRs, and office or telecommunications equipment, the

8050jd

Abstract: 8050j SANKEN power supply sanken ic regulator Step-Down Switching Regulator SFPB-66 SI-8000JD SI-8050JD SI-8050JD-TL SI-8050JF
Contextual Info: SI-8050JD Data Sheet 27469.31 ih ng rs tc lato i Sw egu R Step-Down to 5.0 V, 1.5 A, DC/DC Converter Designed to meet high-current requirements at high efficiency in industrial and consumer applications; embedded core, memory, or logic supplies; TVs, VCRs, and office or telecommunications equipment, the

Contextual Info: SI-8050JD Data Sheet 27469.31* ng rs i h o itc lat Sw egu R Step-Down to 5.0 V, 1.5 A, DC/DC Converter Designed to meet high-current requirements at high efficiency in industrial and consumer applications; embedded core, memory, or logic supplies; TVs, VCRs, and office or telecommunications equipment, the

8050j

Contextual Info: SI-8050JD Data Sheet 27469.31* ng rs i h o itc lat Sw egu R Step-Down to 5.0 V, 1.5 A, DC/DC Converter Designed to meet high-current requirements at high efficiency in industrial and consumer applications; embedded core, memory, or logic supplies; TVs, VCRs, and office or telecommunications equipment, the

Contextual Info: SI-8050JF Data Sheet 27469.32* ng rs i h o itc lat Sw egu R Step-Down to 5.0 V, 1.5 A, DC/DC Converter Designed to meet high-current requirements at high efficiency in industrial and consumer applications; embedded core, memory, or logic supplies; TVs, VCRs, and office or telecommunications equipment, the

8050j

Contextual Info: SI-8050JF Data Sheet 27469.32* ng rs i h o itc lat Sw egu R Step-Down to 5.0 V, 1.5 A, DC/DC Converter Designed to meet high-current requirements at high efficiency in industrial and consumer applications; embedded core, memory, or logic supplies; TVs, VCRs, and office or telecommunications equipment, the

8050 sot-23

Abstract: sot-23 1YC 8050qlt1
Contextual Info: WILLAS FM120-M+ 8050xLT1THRU FM1200-M+ General Purpose Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.

sot-23 Marking 1Hc

Abstract: 8050H marking 1Hc 8050HRLT1
Contextual Info: WILLAS FM120-M+ 8050HxLT1THRU FM1200-M+ General Purpose 1.0A SURFACE MOUNT SCHOTTKY Transistors BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.