TIP125 G Search Results

tip125

Abstract: TIP127 circuit TIP126 TIP127 TIP127 equivalent transistor 127 TIP126 circuit
Contextual Info: TIP125/126/127 TIP125/126/127 ◎ SEMIHOW REV.A0,Oct 2007 TIP125/126/127 TIP125/126/127 Monolithic Construction With Built In Base-Emitter Shunt Resistors PNP Epitaxial Silicon Darlington Transistor - High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A Min.

TIP125

Abstract: TIP127 TIP126
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Darlington Power Transistors TIP125/126/127 DESCRIPTION •With TO-220C package ·DARLNGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type TIP120/121/122 APPLICATIONS ·Designed for general–purpose amplifier

TIP120-D

Abstract: TIP127 TRANSISTOR tip122 1N5825 MSD6100 TIP120 TIP121 TIP122 TIP125 TIP126
Contextual Info: ON Semiconductort Plastic Medium-Power Complementary Silicon Transistors • High DC Current Gain — • • • TIP120 * TIP121* TIP122 * PNP TIP125 * . . . designed for general–purpose amplifier and low–speed switching applications. • NPN hFE = 2500 Typ @ IC

tip122

Abstract: TIP127 K120T TIP120
Contextual Info: ON Semiconductor NPN TIP120 * TIP121* Plastic Medium−Power Complementary Silicon Transistors TIP122 * PNP TIP125 * . . . designed for general−purpose amplifier and low−speed switching applications. • High DC Current Gain — • • • • hFE = 2500 Typ) @ IC

TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT

Contextual Info: TIP125 TIP126 TIP127 _ / V SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial-base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. T O -220 plastic envelope. N-P-N complements are TIP120, TIP121

equivalent of TIP122

Abstract: TIP122
Contextual Info: TIP120/121/122 TIP120/121/122 Medium Power Linear Switching Applications • Complementary to TIP125/126/127 1 TO-220 1.Base 2.Collector 3.Emitter NPN Epitaxial Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter

TIP127 application

Abstract: TIP127
Contextual Info: TIP125/TIP126/TIP127 PNP Epitaxial Darlington Transistor • Medium Power Linear Switching Applications • Complementary to TIP120/121/122 Equivalent Circuit C B TO-220 1 1.Base R1 2.Collector Absolute Maximum Ratings* Symbol VCBO 3.Emitter R1 @ 8kW R2 @ 0.12k W

TIR127

Abstract: TIP127 TIP127 HARRIS
Contextual Info: File Number TIP125, TIP126, TIP127 997 HARRIS SEMICOND SECTOR 43G2271 D D M D W SbE D SII H H A S 8-Ampere P-N-P Darlington Power Transistors —60, —80, and —100 Volts, 65 Watts Gain of 1000 at —3 A Gain of 500 at —0.75 A TERMINAL DESIGNATIONS Features:

TIP126

Abstract: TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT
Contextual Info: _ PHILIPS INTERNATIONAL TIP125 TIP126 TIP127 J{ SbE ]> • 711DÖEL 0D435bfl M b 4 M P H I N T-33-ZI SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxiai-base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. T 0-22 0 plastic envelope. N-P-N complements are TIP120, TIP121

T1P121

Abstract: texas instruments tip122 texas instruments tip127 TIP121 TIP121 TEXAS T1P122
Contextual Info: TYPES TIP120, TIP121. TIP122 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS D ESIGN ED FOR COM PLEM EN TARY USE WITH TIP125, TIP126, TIP127 65 W at 25°C Case Temperature • Min hpE ° f 1000 at 3 V , 3 A • 5 A Rated Collector Current • 50 mJ Reverse Energy Rating

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TIP125 Features • • • • Low collector-emitter saturation voltage Amplifier applications -emitter shunt resistors.

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TIP125 Features • • • Low collector-emitter saturation voltage Amplifier applications -emitter shunt resistors.

Contextual Info: MCC TM Micro Commercial Components TIP125/126/127
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • Mounting Torgue: 5 in-lbs Maximum The complementary NPN types are the TIP121/2/3 respectively

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

TIP120

Abstract: TIP121 TIP122 TIP125 TIP127
Contextual Info: PANAS ONI C INDL/E LE K bi32flS2 0010445 3 12E D -CIO Darlington Silicon PNP Power Transistors TO-220 Package T -3 3 -3 Ï Absolute M axim um Ratings T a = 2 5 °C Item Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

BU180

Abstract: bu180a TIP162A tip147 T1P130 texas instruments tip35 Texas Instruments TIP36C tip142 T066 TIP110
Contextual Info: T exas In s t r u m e n t s Com plem entary Darlingtons > Device Type O O cj V 60 80 100 60 80 100 60 80 100 60 80 100 60 80 100 60 80 100 60 80 100 60 80 100 200 V 60 80 100 60 80 100 60 80 100 60 80 100 60 80 100 60 80 100 60 80 100 60 80 100 200 ouu o w

BD320C

Abstract: 2N3725 tip122 tip127 BD321A TlPl22 2N3261 2N3512 2N3724 BD320A BD320B
Contextual Info: CORE DRIVERS TABLE 9 - N P N SILICON PLANAR HIGH SPEED CORE DRIVER TRANSISTORS The devices shown in this table are designed fo r use in fast, medium and high voltage, high current core driving applications where the high speed at high current capability is o f prime importance.

MJD122T4G

Abstract: 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125 TIP127
Contextual Info: MJD122 NPN MJD127 (PNP) Preferred Device Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves

Contextual Info: Ì 989963 CENTRAL SEMICONDUCTOR b i d e I oocm ns a _ 61C 00195'^ ^ « T POWER DARLINGTON TRANSISTORS EPOXY 6.0A 1C = TYPE NO . Ic VCEO Pd (Max) Tc=25°C Volts Watts VCE(S) @IC fT Min Amps Volts Amps Mh z hFE @IC Min - Max PNP Amps BDW23 BDW24 : 6.0 45 50

MJD122

Abstract: TIP125-TIP127 mjd122g
Contextual Info: MJD122, NJVMJD122T4G NPN , MJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features http://onsemi.com SILICON POWER TRANSISTOR 8 AMPERES

fjaf6812

Abstract: tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920
Contextual Info: Discrete Bipolar Power Transistor – General Purpose Part Number IC A VCEO (V) VCBO (V) VEBO (V) PC (W) hFE VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

T1P42C

Abstract: bd534j T1P102
Contextual Info: TO-220 PIN CO N FIG U R ATIO N 1. B A S E 2. C O L L E C T O R 3. EM ITTER 4. C O L L E C T O R c ,01 0 -I MIN MAX 14,42 9,63 3,56 16.51 10,67 4,83 0,90 1,40 3,88 2,79 3,43 0,56 14,73 6,35 2,92 DIM E A B C D E F G H J K L M N 3 G - 1,15 3,75 2,29 2,54 12,70

T1P42C

Contextual Info: TO-220 PIN CONFIGURATION 1. BASE 2 . COLLECTOR 3. EMITTER 4. COLLECTOR c DIM E ,01 0 -I A B C D E F G H J K L M N 3 G MIN MAX 14,42 9,63 3,56 16.51 10,67 4,83 0,90 1,40 3,88 2,79 3,43 0,56 14,73 6,35 2,92 - 1,15 3,75 2,29 2,54 12,70 - 2,03 - 7 31,24 DEG TO-220 Power Package Transistors NPN