TIME200NÂ Search Results
TIME200NÂ Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: GSI550 Transistors N-Channel IGBT with Current Sensing V BR CES (V)500 V(BR)GES (V)25 I(C) Max. (A)80 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case700m td(on) Max (s) On time delay100n t(r) Max. (s) Rise time200n |
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GSI550 Junc-Case700m delay100nà time200nà time900nà StyleTO-218 Code5-71 NumberTR00500071 | |
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Contextual Info: IXGH30N60U1 Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V)20 I(C) Max. (A)50 Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case620m Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.8 |
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IXGH30N60U1 Junc-Case620m delay100nà time200nà time500nà | |
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Contextual Info: IXGH30N60AU1 Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V)20 I(C) Max. (A)50 Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case620m Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.8 |
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IXGH30N60AU1 Junc-Case620m delay100nà time200nà time500nà | |
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Contextual Info: SML60G60AN Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V) I(C) Max. (A)60.0 Absolute Max. Power Diss. (W)185 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case.67 Thermal Resistance Junc-Amb.30.0 g(fe) Min. (S) Trans. admitt. |
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SML60G60AN delay75nà time200nà time600nà | |
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Contextual Info: IXGH30N30 Transistors N-Channel IGBT V BR CES (V)250 V(BR)GES (V)20 I(C) Max. (A)60 Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case620m Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt. |
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IXGH30N30 Junc-Case620m delay100nà time200nà time700nà | |
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Contextual Info: IRGAC30U Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V) I(C) Max. (A)17 Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case1.67 Thermal Resistance Junc-Amb.30 g(fe) Min. (S) Trans. admitt.3.1 |
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IRGAC30U delay48nà time30nà time200nà | |
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Contextual Info: IRGP430UD2 Transistors N-Channel IGBT V BR CES (V)500 V(BR)GES (V)20 I(C) Max. (A)25# Absolute Max. Power Diss. (W)100# Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150 Thermal Resistance Junc-Case1.2 Thermal Resistance Junc-Amb.40 g(fe) Min. (S) Trans. admitt.2.3 |
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IRGP430UD2 delay77nà time75nà time200nà |