TIME15U Search Results
TIME15U Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
Contextual Info: MP282 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)80ã V(BR)CBO (V) I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)100õ I(CBO) Max. (A)5.0mØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
Original |
MP282 time15u | |
Contextual Info: 2N1358+JAN Transistors Ge PNP Power BJT Military/High-RelY V BR CEO (V) V(BR)CBO (V)80 I(C) Max. (A)15 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)95õ I(CBO) Max. (A)8.0mx @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V).70 @I(C) (A) (Test Condition)12 |
Original |
2N1358 Freq100k time15uà StyleTO-36 | |
Contextual Info: 2N5324 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)250 I(C) Max. (A)10 Absolute Max. Power Diss. (W)56 Maximum Operating Temp (øC)125õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
Original |
2N5324 time15u | |
2N1358Contextual Info: 2N1358 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)80 I(C) Max. (A)15 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)95õ I(CBO) Max. (A)8.0mx @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V).70 @I(C) (A) (Test Condition)12 |
Original |
2N1358 Freq100k time15uà StyleTO-36 | |
Contextual Info: 2N5325 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)200 V(BR)CBO (V)325 I(C) Max. (A)10 Absolute Max. Power Diss. (W)56 Maximum Operating Temp (øC)125õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
Original |
2N5325 time15u | |
Contextual Info: 2N2266 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)12 Maximum Operating Temp (øC)125# I(CBO) Max. (A)2.0m @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V).75 @I(C) (A) (Test Condition)5.0 |
Original |
2N2266 time15u | |
Contextual Info: 2N442 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)50 I(C) Max. (A)15 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)95õ I(CBO) Max. (A)8.0m @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V)0.3Â @I(C) (A) (Test Condition)12 |
Original |
2N442 Freq10kà time15uà StyleTO-36 | |
Contextual Info: MP281 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)70ã V(BR)CBO (V) I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)100õ I(CBO) Max. (A)5.0mØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
Original |
MP281 time15u |