TIM7179 Search Results

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-4 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 7.1 GHz to 7.9 GHz • High gain - G 1dB = 6.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally m atched • H erm etically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-7L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -43 d B c at Po = 28.5 dBm, - Single carrier level • High power - P1dB = 38.5 dBm at 7.1 GHz to 7.9 GHz

TIM7179-4UL

Contextual Info: MICROWAVE POWER GaAs FET TIM7179-4SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 25.5dBm Single Carrier Level „ HIGH POWER P1dB=36.5dBm at 7.1GHz to 7.9GHz „ HIGH GAIN G1dB=7.5dB at 7.1GHz to 7.9GHz

TIM7179-16

Contextual Info: TOSHIBA TIM7179-16 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 7.1 GHz to 7.9 GHz • High gain - G1dB = 5.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally matched • Hermetically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-16 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 42.5 dBm at 7.1 GHz to 7.9 GHz • High gain - G 1dB = 5.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally m atched • H erm etically sealed package

TIM7179-8

Contextual Info: TOSHIBA TIM7179-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 39 dBm at 7.1 GHz to 7.9 GHz • High gain - G1dB = 6.0 dB at 7.1 GHz to 7.9 GHz • Broad band internally matched • Hermetically sealed package

TIM7179-12UL

Contextual Info: MICROWAVE POWER GaAs FET TIM7179-12UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=41.5dBm at 7.1GHz to 7.9GHz HIGH GAIN G1dB=9.0dB at 7.1GHz to 7.9GHz BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°°C

TIM7179-16UL

Contextual Info: MICROWAVE POWER GaAs FET TIM7179-16UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=42.5dBm at 7.1GHz to 7.9GHz „ HIGH GAIN G1dB= 8.5dB at 7.1GHz to 7.9GHz „ BROAD BAND INTERNALLY MATCHED „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°°C

TIM7179-14L

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET M ICROW AVE SEM ICO NDUCTO R TIM7179-14L TECHNICAL DATA FEATURES : • L O W IN T E R M O D U L A T IO N D IS T O R T IO N IM 3 = ■ - 4 3 d B c a t P o = 3 1 .5 d B m , G 1dB = 6.5 d B a t 7.1 G H z to 7 .9 G H z S in g le C a rrie r L evel

Contextual Info: T O S H IB A MICROWAVE POWER GaAs FET M ICROW AVE SEM ICO NDUCTO R TIM7179-14L TECHNICAL DATA FEATURES : • LOW INTERMODULATION DISTORTION HIGH GAIN IM 3 = - 4 3 dBc at Po = 31.5 dBm, G1dB = 6.5 dB at 7.1 GHz to 7.9 GHz BROAD BAND INTERNALLY MATCHED Single Carrier Level

LDB 107

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM7179-4 TECHNICAL DATA m FEATURES: • HIGH POWER PldB = 36.0 dBm at 7.1 GHz to 7.9 GHz ■ BROAD BAND INTERNALLY MATCHED ■ HIGH GAIN GidB = 6*5 dB at 7.1 GHz to 7.9 GHz ■ HERMETICALLY SEALED PACKAGE

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM7179-16SL TECHNICAL DATA FEATURES : • LOW INTERMODULATION DISTORTION HIGH EFFICIENCY IM3 = - 45 dBc at Po = 31.5 dBm, qadd = 31 % at 7.1 GHz to 7. 9 GHz Single Carrier Level ■ HIGH GAIN HIGH POWER

TIM7179-4SL

Contextual Info: MICROWAVE POWER GaAs FET TIM7179-4SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 25.5dBm Single Carrier Level „ HIGH POWER P1dB=36.5dBm at 7.1GHz to 7.9GHz „ HIGH GAIN G1dB=7.5dB at 7.1GHz to 7.9GHz

TIM7179-8UL

Contextual Info: MICROWAVE POWER GaAs FET TIM7179-8UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=39.5dBm at 7.1GHz to 7.9GHz „ HIGH GAIN G1dB= 9.0dB at 7.1GHz to 7.9GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS

TI 365

Abstract: TIM7179-4SL
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-4SL Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 25.5 dBm, - Single carrier level • High power - P idB = 36.5 dBm at 7.1 GHz to 7.9 GHz • High efficiency - iladd = 33% at 7.1 GHz to 7.9 GHz

TIM7179-16L

Contextual Info: TOSHIBA TIM7179-16L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -42 dBc at Po = 31.5 dBm, - Single carrier level • High power - P1dB = 42 dBm at 7.1 GHz to 7.9 GHz

Contextual Info: MICROWAVE POWER GaAs FET TIM7179-6UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=38.5dBm at 7.1GHz to 7.9GHz n HIGH GAIN G1dB=9.0dB at 7.1GHz to 7.9GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C

Contextual Info: MICROWAVE POWER GaAs FET TIM7179-16UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=42.5dBm at 7.1GHz to 7.9GHz n HIGH GAIN G1dB= 8.5dB at 7.1GHz to 7.9GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET M ICROW AVE SEM ICO NDUCTO R TIM7179-7L TECHNICAL DATA FEATURES : • H IG H G A IN LO W IN T E R M O D U L A T IO N D IS T O R T IO N IM 3 = - 4 3 d B c at Po = 28.5 dBm , G-idB = 7.0 dB at 7.1 G H z to 7.9 G Hz B R O A D B A ND IN T E R N A LLY M A T C H E D

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-8SL Features • Low intermodulation distortion - I M 3 = -4 5 dB c a t Po = 2 8 .5 dBm , - Single carrier level • High pow er - P 1dB = 3 9 .5 dBm at 7.1 G H z to 7 .9 G H z • High efficiency - Tiacjd = 3 2 % at 7.1 G H z to 7 .9 G H z

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-8L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -44 dBc at Po = 28 dBm, - Single carrier level • High power - P1dB = 39 dBm at 7.1 GHz to 7.9 GHz • High gain

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-16SL Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 31.5 dBm, - Single carrier level • High power - P-idB = 42.5 dBm at 7.1 GHz to 7.9 GHz • High efficiency - Tladd = 3_l% at 7-1 GHz to 7.9 GHz

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-16L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -42 dBc at Po = 31.5 dBm, - Single carrier level • High power * P-idB = 42 dBm at 7.1 GHz to 7.9 GHz

TIM7179-6UL

Contextual Info: MICROWAVE POWER GaAs FET TIM7179-6UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=38.5dBm at 7.1GHz to 7.9GHz „ HIGH GAIN G1dB=9.0dB at 7.1GHz to 7.9GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS