TIM5359-16 Search Results
TIM5359-16 Datasheets (6)
Toshiba
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| TIM5359-16 |
|
TIM5359 - TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, 2-16G1B, 3 PIN, FET RF Power | Original | 103.94KB | 4 | ||
| TIM5359-16 |
|
Internally Matched Power GaAs FET (C-Band) | Original | 120.21KB | 5 | ||
| TIM5359-16EL |
|
TIM5359 - TRANSISTOR RF POWER, FET, FET RF Power | Original | 68.2KB | 2 | ||
| TIM5359-16L |
|
Transistor | Scan | 277.47KB | 5 | ||
| TIM5359-16SL |
|
TIM5359 - TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-16G1B, 2 PIN, FET RF Power | Original | 103.94KB | 4 | ||
| TIM5359-16UL |
|
C-Band Power GaAs IMFETs; Frequency Band (GHz): 5.3-5.9; P1dB (dBm): 42.5; G1dB (dB): 10; Ids (A) Typ.: 4.4; IM3 (dBc) Typ.: -47; Rth (°C/W) Typ.: 1.5; Package Type: 2-16G1B | Original | 333.98KB | 4 |
TIM5359-16 Price and Stock
Toshiba America Electronic Components
Toshiba America Electronic Components TIM535916SLMICROWAVE POWER GAAS FET RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TIM535916SL | 4 |
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