TIM50 Search Results

Contextual Info: MICROWAVE POWER GaAs FET TIM5053-8SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level „ HIGH POWER P1dB=39.5dBm at 5.0GHz to 5.3GHz „ HIGH GAIN G1dB=9.0dB at 5.0GHz to 5.3GHz

Contextual Info: TO SHIBA MICROWAVE POWER GaAs FE" MICROWAVE SEMICONDUCTOR TIM5053-35SL TECHNICAL DATA FEATURES : • LOW INTERMODULATION DISTORTION ■ HIGH EFFICIENCY IMS » -45dBo at Po » 35.tídBm rjadd a 38« a t S. 0 to 5. 3GHz ■ HIGH POWER ■ HIGH GAIN GldB s 9. OdB at 5.0 to 5.3GHz

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM5053-4 TECHNICAL DATA FEATURES: • HIGH POWER Pi dB = 36.0 dBm at 5.0 GHz to 5.3 GHz ■ BROAD BAND INTERNALLY MATCHED ■ HIGH GAIN GidB = 9-5 dB at 5.0 GHz to 5.3 GHz ■ HERMETICALLY SEALED PACKAGE

TIM5053-4SL

Contextual Info: MICROWAVE POWER GaAs FET TIM5053-4SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 25.5dBm Single Carrier Level „ HIGH POWER P1dB=36.5dBm at 5.0GHz to 5.3GHz „ HIGH GAIN G1dB=9.5dB at 5.0GHz to 5.3GHz

Contextual Info: MICROWAVE POWER GaAs FET TIM5053-16SL PRELIMINARY MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWERT n BROAD BAND INTERNALLY MATCHED P1dB=42.5dBm at 5.0GHz to 5.3GHz n HERMETICALLY SEALED PACKAGE n HIGH GAIN G1dB=8.5dB at 5.0GHz to 5.3GHz RF PERFORMANCE SPECIFICATIONS Ta= 25° C

Contextual Info: MICROWAVE POWER GaAs FET TIM5053-4SL P RELIMINARY MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWERT n BROAD BAND INTERNALLY MATCHED P1dB=36.5dBm at 5.0GHz to 5.3GHz n HERMETICALLY SEALED PACKAGE n HIGH GAIN G1dB=9.5dB at 5.0GHz to 5.3GHz RF PERFORMANCE SPECIFICATIONS Ta= 25° C

TIM5053-4SL

Contextual Info: MICROWAVE POWER GaAs FET TIM5053-4SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 25.5dBm Single Carrier Level n HIGH POWER P1dB=36.5dBm at 5.0GHz to 5.3GHz n HIGH GAIN G1dB=9.5dB at 5.0GHz to 5.3GHz

TIM5053-30L

Contextual Info: TOSHIBA TIM5053-30L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 34.5 dBm, - Single carrier level • High power - P1dB = 45 dBm at 5.0 GHz to 5.3 GHz

TIM5053-8SL

Abstract: 53GHZ/512K/533FSB
Contextual Info: MICROWAVE POWER GaAs FET TIM5053-8SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level „ HIGH POWER P1dB=39.5dBm at 5.0GHz to 5.3GHz „ HIGH GAIN G1dB=9.0dB at 5.0GHz to 5.3GHz

D 1163 A

Abstract: TIM5053-8L
Contextual Info: TIM5053-8L FEATURES: • LOW INTERMODULATION DISTORTION IM3 = -45 dBc at Po = 28 dBm, Single Carrier Level ■ HIGH POW ER P i dB = 39 dBm at 5.0 GHz to 5.3 GHz ■ HIGH GAIN G ld B = 9 dB at 5.0 GHz to 5.3 GHz ■ BROAD BAND INTERNALLY MATCHED ■ HERMETICALLY SEALED PACKAGE

TIM5053-35SL

Contextual Info: MICROWAVE POWER GaAs FET TIM5053-35SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 35dBm Single Carrier Level n HIGH POWER P1dB=45.5dBm at 5.0GHz to 5.3GHz n HIGH GAIN G1dB=9.0dB at 5.0GHz to 5.3GHz

TIM5053-8SL

Contextual Info: MICROWAVE POWER GaAs FET TIM5053-8SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level n HIGH POWER P1dB=39.5dBm at 5.0GHz to 5.3GHz n HIGH GAIN G1dB=9.0dB at 5.0GHz to 5.3GHz

Contextual Info: TIM5053-8L FEATURES: • LOW INTERMODULATION DISTORTION IM3 = -45 dBc at Po = 28 dBm, Single Carrier Level ■ HIGH POWER Pi dB = 39 dBm at 5.0 GHz to 5.3 GHz ■ HIGH GAIN GldB = 9 dB at 5.0 GHz to 5.3 GHz ■ BROAD BAND INTERNALLY MATCHED ■ HERMETICALLY SEALED PACKAGE

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5053-16 Internally Matched Power GaAs FETs C-Band Features • H i g h power - P idB = 42.5 dBm at 5.0 GHz to 5.3 GHz • High gain - G-|dB = 8 dB at 5.0 GHz to 5.3 GHz • Broad band internally matched • Hermetically sealed package

TIM5053-35SL

Abstract: TIM5053-3SSL
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FE" MICROWAVE SEM ICO NDUCTO R TIM5053- 35SL TECHNICAL DATA FEATURES : • LOW INTERM O DULATIO N DISTO RTIO N ■ HIGH EFFIC IEN C Y IMS » -4 5 d B o at Po » 35.ddB m ■qadd a 38« a t S. 0 to 5. 3GHz ■ HIGH G AIN ■ H IG H P O W E R

Contextual Info: TOSHIBA MICROWAVE POWER G aAs FET M ICROWAVE S E M IC O N D U C T O R TIM5053-35SL TECHNICAL DATA FEATURES : • HIGH EFFICIENCY ■ LOW INTERMODULATION DISTORTION TJadd = 38% at 5. 0 to 5. 3GHz IM3 = -4 5 d B c at Po = 35.0dBm ■ HIGH GAIN ■ HIGH POWER

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM5053-16L TECHNICAL DATA FEATURES: HIGH GAIN G1dB = 8.0 dB at 5.0 GHz to 5.3 GHz BROAD BAND INTERNALLY MATCHED • LOW INTERMODULATION DISTORTION IM3 = -45 dBc at Po = 31.5 dBm Single Carrier Level

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM5053-8 TECHNICAL DATA FEATURES: • HIGH POWER PldB = 39 dBm at 5.0 GHz to 5.3 GHz ■ BROAD BAND INTERNALLY MATCHED ■ HIGH GAIN GidB = 9 0 dB at 5.0 GHz to 5.3 GHz ■ HERMETICALLY SEALED PACKAGE

OC44

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5053-8 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 39 dBm at 5.0 GHz to 5.3 GHz • High gain - G idB = 9.0 dB at 5.0 GHz to 5.3 GHz • Broad band internally m atched • H erm etically sealed package

TIM5053-4

Contextual Info: TIM5053-4 FEATURES: • HIGH POWER PldB = 36.0 dBm at 5.0 GHz to 5.3 GHz ■ BROAD BAND INTERNALLY MATCHED ■ HIGH GAIN G-|dB = 9.5 dB at 5.0 GHz to 5.3 GHz ■ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta = 25°C CHARACTERISTICS O u tp u t Power

TIM5053-16SL

Contextual Info: MICROWAVE POWER GaAs FET TIM5053-16SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 31.5dBm Single Carrier Level n HIGH POWER P1dB=42.5dBm at 5.0GHz to 5.3GHz n HIGH GAIN G1dB=8.5dB at 5.0GHz to 5.3GHz

TIM5053-8

Contextual Info: TOSHIBA TIM5053-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 39 dBm at 5.0 GHz to 5.3 GHz • High gain - G1dB = 9.0 dB at 5.0 GHz to 5.3 GHz • Broad band internally matched • Hermetically sealed package

Contextual Info: MICROWAVE POWER GaAs FET TIM5053-16SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 31.5dBm Single Carrier Level „ HIGH POWER P1dB=42.5dBm at 5.0GHz to 5.3GHz „ HIGH GAIN G1dB=8.5dB at 5.0GHz to 5.3GHz

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5053-16L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low in te rm o d u la tio n d is to rtio n - IM 3 = -45 d B c a t Po = 3 1 .5 d B m , - S in g le c a rrie r level • H igh p o w e r - P idB = 4 2 .5 d B m at 5.0 G H z to 5 .3 G H z