TIM44 Search Results

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM4450-16 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 4.4 GHz to 5.0 GHz • High gain - G 1dB = 9.0 dB at 4.4 GHz to 5.0 GHz • Broad band internally m atched • H erm etically sealed package

Contextual Info: MICROWAVE POWER GaAs FET TIM4450-8SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level „ HIGH POWER P1dB=39.5dBm at 4.4GHz to 5.0GHz „ HIGH GAIN G1dB=9.5dB at 4.4GHz to 5.0GHz

Contextual Info: MICROWAVE POWER GaAs FET TIM4450-8SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level „ HIGH POWER P1dB=39.5dBm at 4.4GHz to 5.0GHz „ HIGH GAIN G1dB=9.5dB at 4.4GHz to 5.0GHz

TIM4450-4

Abstract: TPM4450-4
Contextual Info: TOSHIBA TIM4450-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 4.4 GHz to 5.0 GHz • High gain - G1dB = 10.0 dB at 4.4 GHz to 5.0 GHz • Broad band internally matched • Hermetically sealed package

TIM4450-16UL

Contextual Info: MICROWAVE POWER GaAs FET TIM4450-16UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES nHIGH POWER P1dB=42.5dBm at 4.4GHz to 5.0GHz n HIGH GAIN G1dB=10.0dB at 4.4GHz to 5.0GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM4450-30L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 34.5 dBm, - Single carrier level • High power * P-idB = 45 dBm at 4.4 GHz to 5.0 GHz

Contextual Info: MICROWAVE POWER GaAs FET TIM4450-4UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=36.5dBm at 4.4GHz to 5.0GHz „ HIGH GAIN G1dB=11.0dB at 4.4GHz to 5.0GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM4450-8L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - I M 3 = -45 d B c at Po = 28 dBm, - Single carrier level • High power - P1dB = 39 dBm at 4.4 GHz to 5.0 GHz

TIM4450-60SL

Contextual Info: MICROWAVE POWER GaAs FET TIM4450-60SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level „ HIGH POWER P1dB=48.0dBm at 4.4GHz to 5.0GHz „ HIGH GAIN G1dB=9.5dB at 4.4GHz to 5.0GHz

Contextual Info: MICROWAVE POWER GaAs FET TIM4450-16SL PRELIMINARY MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWERT n BROAD BAND INTERNALLY MATCHED P1dB=42.5dBm at 4.4GHz to 5.0GHz n HERMETICALLY SEALED PACKAGE n HIGH GAIN G1dB=9.0dB at 4.4GHz to 5.0GHz RF PERFORMANCE SPECIFICATIONS Ta= 25° C

TIM4450-8UL

Contextual Info: MICROWAVE POWER GaAs FET TIM4450-8UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=39.5dBm at 4.4GHz to 5.0GHz n HIGH GAIN G1dB=10.5dB at 4.4GHz to 5.0GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C

TIM4450-8ul

Contextual Info: MICROWAVE POWER GaAs FET TIM4450-8UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=39.5dBm at 4.4GHz to 5.0GHz „ HIGH GAIN G1dB=10.5dB at 4.4GHz to 5.0GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS

TIM4450-16

Abstract: TPM4450-16
Contextual Info: TOSHIBA TIM4450-16 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 4.4 GHz to 5.0 GHz • High gain - G1dB = 9.0 dB at 4.4 GHz to 5.0 GHz • Broad band internally matched • Hermetically sealed package

TIM4450-8

Abstract: TPM4450-8
Contextual Info: TOSHIBA TIM4450-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 39 dBm at 4.4 GHz to 5.0 GHz • High gain - G1dB = 9.5 dB at 4.4 GHz to 5.0 GHz • Broad band internally matched • Hermetically sealed package

ip 4056

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM4450-4 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 4.4 GHz to 5.0 GHz • High gain - G 1dB = 10.0 dB at 4.4 GHz to 5.0 GHz • Broad band internally m atched • H erm etically sealed package

TIM4450-8ul

Contextual Info: MICROWAVE POWER GaAs FET TIM4450-8UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=39.5dBm at 4.4GHz to 5.0GHz „ HIGH GAIN G1dB=10.5dB at 4.4GHz to 5.0GHz „ BROAD BAND INTERNALLY MATCHED „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°°C

TIM4450-4UL

Contextual Info: MICROWAVE POWER GaAs FET TIM4450-4UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=36.5dBm at 4.4GHz to 5.0GHz „ HIGH GAIN G1dB=11.0dB at 4.4GHz to 5.0GHz „ BROAD BAND INTERNALLY MATCHED „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°°C

IC ADD 3501

Contextual Info: TOSHIBA MICROWAVE MICROWAVE POWER GaAs FET S E M IC O N D U C T O R TIM4450-16 TECHNICAL DATA FEATURES: • HIGH POWER PidB = 42.5 dBm at 4.4 GHz to 5.0 GHz BROAD BAND INTERNALLY MATCHED ■ HIGH GAIN GidB = 9-0 dB at 4.4 GHz to 5.0 GHz HERMETICALLY SEALED PACKAGE

TIM4450-35SL

Contextual Info: MICROWAVE POWER GaAs FET TIM4450-35SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 35.0dBm, Single Carrier Level „ HIGH POWER P1dB=45.5dBm at 4.4GHz to 5.0GHz „ HIGH GAIN G1dB=9.5dB at 4.4GHz to 5.0GHz

TIM4450-8SL

Contextual Info: MICROWAVE POWER GaAs FET TIM4450-8SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level „ HIGH POWER P1dB=39.5dBm at 4.4GHz to 5.0GHz „ HIGH GAIN G1dB=9.5dB at 4.4GHz to 5.0GHz

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM4450-4L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM 3 = -45 dBc at Po = 25 dBm, - Single carrier level • High power ' P-idB = 36 dBm at 4.4 G H z to 5.0 GHz

TIM4450-12UL

Contextual Info: MICROWAVE POWER GaAs FET TIM4450-12UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=41.5dBm at 4.4GHz to 5.0GHz HIGH GAIN G1dB=10.5dB at 4.4GHz to 5.0GHz BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°°C

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET M ICROW AVE SEM ICO NDU CTO R TIM4450-45SL TECHNICAL DATA FEATURES : • LOW INTERMODULATION DISTORTION HIGH GAIN IM3 = - 45 dB c at Po = 35. 5 dBm, G 1dB = 9.5 dB at 4.4 GHz to 5.0 GHz BROAD BAND INTERNALLY MATCHED Single Carrier Level

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM4450-30L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -45 d B c at Po = 34.5 dBm, - Single carrier level • High power • P-idB = 45 dBm at 4.4 GHz to 5.0 GHz