| TIM1414-8 |
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Toshiba
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FET, Microwave Power GaAs FET Transistor, ID 10.4 A |
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255.97KB |
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| TIM1414-8 |
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Toshiba
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TIM1414 - TRANSISTOR KU BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, 2-11C1B, 3 PIN, FET RF Power |
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133.59KB |
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| TIM1414-8-252 |
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Toshiba
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X and Ku-Band Power GaAs IMFETS; Frequency Band (GHz): 13.75-14.5; P1dB (dBm): 39; G1dB (dB): 5; Ids (A) Typ.: 3.4; Package Type: 1.6; Rth (°C/W) Typ.: 2-11C1B |
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121.53KB |
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| TIM1414-8-252 |
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Toshiba
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Microwave Power GaAs FET |
Scan |
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98.83KB |
2 |
| TIM1414-8-252 |
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Toshiba
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FET, Microwave Power GaAs FET Transistor, ID 10.4 A |
Scan |
PDF
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98.83KB |
2 |
| TIM1414-8L |
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Toshiba
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FET, Microwave Power GaAs FET Transistor, ID 10.4 A |
Original |
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150.38KB |
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| TIM1414-8L |
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Toshiba
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TIM1414 - TRANSISTOR KU BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-11C1B, 2 PIN, FET RF Power |
Original |
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133.59KB |
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