TIM10 Search Results

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1011-5 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 37.5 dBm at 10.7 GHz to 11.7 GHz • High gain - G-|dB = 7.0 dB at 10.7 GHz to 11.7 GHz • Broadband internally matched • Hermetically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1011-15L RF Performance Specifications Ta = 25°C Characteristic Symbol Output Power at 1 dB Compression Point P 1dB Power Gain at 1dB Compression Point G 1dB Condition Unit Min. Typ. Max. dBm 41.0 42.0 - dB 6.0 7.0 -

Contextual Info: MICROWAVE POWER GaAs FET TIM1011-8UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 27.0dBm Single Carrier Level „ HIGH POWER P1dB=39.5 dBm at 10.7 GHz to 11.7 GHz „ HIGH GAIN G1dB=9.0 dB at 10.7 GHz to 11.7 GHz

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1011-8L Low Distortion Internally Matched Power GaAs FETs X, Ku-Band Features • Low interm odulation distortion - IM3 = -45 d B c at Po = 28 dBm, - Single carrier level • High power - P1dB = 39.5 dBm at 10.7 GHz to 11.7 GHz

TIM1011-4L

Contextual Info: TOSHIBA TIM1011-4L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs X, Ku-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 25 dBm, - Single carrier level • High power - P1dB = 36.5 dBm at 10.7 GHz to 11.7 GHz

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1011-15 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 42.0 dBm at 10.7 GHz to 11.7 GHz • High gain - G-|dB = 7.0 dB at 10.7 GHz to 11.7 GHz • Broadband internally matched • Hermetically sealed package

TIM1011-5L

Contextual Info: MICROWAVE POWER GaAs FET TIM1011-5L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER „ BROAD BAND INTERNALLY MATCHED P1dB=37.5dBm at 10.7GHz to 11.7GHz „ HIGH GAIN „ HERMETICALLY SEALED PACKAGE G1dB=7.0dB at 10.7GHz to 11.7GHz RF PERFORMANCE SPECIFICATIONS

TIM1011-15L

Contextual Info: MICROWAVE POWER GaAs FET TIM1011-15L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=42.0dBm at 10.7GHz to 11.7GHz „ HIGH GAIN G1dB=7.0dB at 10.7GHz to 11.7GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS

TIM1011-15

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1011-15 TECHNICAL DATA FEATURES: • HIGH POWER ■ BROAD BAND INTERNALLY MATCHED ■ HERMETICALLY SEALED PACKAGE p ldB = 42.0 dBm at 10.7 GHz to 11.7 GHz ■ HIGH GAIN GidB = 7.0 dB at 10.7 GHz to 11.7 GHz

Contextual Info: MICROWAVE POWER GaAs FET TIM1011-2L PRELIMINARY MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWERT n BROAD BAND INTERNALLY MATCHED P1dB=33.5dBm at 10.7GHz to 11.7GHz n HERMETICALLY SEALED PACKAGE n HIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHz RF PERFORMANCE SPECIFICATIONS Ta= 25° C

TIM1011-4L

Contextual Info: MICROWAVE POWER GaAs FET TIM1011-4L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=36.5dBm at 10.7GHz to 11.7GHz n HIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C

TIM1011-10

Contextual Info: TOSHIBA TIM1011-10 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 40.5 dBm at 10.7 GHz to 11.7 GHz • High gain - G1dB = 6.0 dB at 10.7 GHz to 11.7 GHz • Broadband internally matched • Hermetically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1011-8 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 39.5 dBm at 10.7 GHz to 11.7 GHz • High gain - G-|dB = 6.0 dB at 10.7 GHz to 11.7 GHz • Broadband internally matched • Hermetically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1011-10L Low Distortion Internally Matched Power GaAs FETs X, Ku-Band Features • Low interm odulation distortion - I M 3 = -45 d B c at Po = 29 dBm, - Single carrier level • High power - P1dB = 40.5 dBm at 10.7 GHz to 11.7 GHz

LDB 107

Abstract: TIM1011
Contextual Info: TOSHIBA MICROW AVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1011-8L TECHNICAL DATA FE A T U R E S : • LOW INTERMODULATION DISTORTION IM 3 = —45 dBc at Po = 28 dBm, Single Carrier Level • HIGH POWER PldB =39.5 dBm at 10.7 GHz to 11.7 GHz R F P E R F O R M A N C E S P E C IF IC A T IO N S

TIM1011-15L

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET M ICROW AVE SEM ICO NDUCTO R TIM1011-15L TECHNICAL DATA FEATURES : • HIGH POWER HIGH GAIN IM 3 = - 45 dBc at Po = 30 dBm, G k jb BROAD BAND INTERNALLY MATCHED Single Carrier Level ■ = 7.0 dB at 10.7 GHz to 11.7 GHz HIGH POWER

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1011-10L TECHNICAL DATA FEATURES : • H IG H G AIN H IG H PO W ER IM 3 = - 4 5 d B c at Po = 29 dBm , GidB = 6.0 dB at 10.7 G H z to 11.7 G H z B R O A D B A N D IN T E R N A LL Y M A T C H E D S ingle C arrier Level

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1011-10L Low Distortion Internally Matched Power GaAs FETs X, Ku-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 29 dBm, - Single carrier level • High power - P1dB = 40.5 dBm at 10.7 GHz to 11.7 GHz

LDB 107

Contextual Info: TOSHIBA MICROW AVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1011-4L TECHNICAL DATA FEATURES : • LOW INTERMODULATION DISTORTION IM 3 = —45 dBc at Po = 2 5 dBm, Single Carrier Level ■ HIGH POWER PidB = 3 6 . 5 dBm at 10.7 GHz to 11.7 GHz ■ HIGH GAIN

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1011-4L Low Distortion Internally Matched Power GaAs FETs X, Ku-Band Features • Low interm odulation distortion - IM3 = -45 d B c at Po = 25 dBm, - Single carrier level • High power - P1dB = 36.5 dBm at 10.7 GHz to 11.7 GHz

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1011-4 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 10.7 GHz to 11.7 GHz • High gain - G-|dB = 7.5 dB at 10.7 GHz to 11.7 GHz • Broadband internally matched • Hermetically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1011-10 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 40.5 dBm at 10.7 GHz to 11.7 GHz • High gain - G-|dB = 6.0 dB at 10.7 GHz to 11.7 GHz • Broadband internally matched • Hermetically sealed package

TIM1011-8ULA

Contextual Info: MICROWAVE POWER GaAs FET TIM1011-8ULA MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 27.0dBm Single Carrier Level „ HIGH POWER P1dB=39.5 dBm at 10.7 GHz to 11.7 GHz „ HIGH GAIN G1dB=9.0 dB at 10.7 GHz to 11.7 GHz

Contextual Info: MICROWAVE POWER GaAs FET TIM1011-2UL MICROWAVE SEMICONDUCTOR Preliminary TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 21.0dBm Single Carrier Level „ HIGH POWER P1dB=33.5dBm at 10.7GHz to 11.7GH „ HIGH GAIN G1dB=9.5dB at 10.7GHz to 11.7GHz