TIC COL 02 Search Results

Contextual Info: 13 12 10 M AT E R IA F NUMBER « OF COLUMNS tt OF DIFF PAIR DIM "A" MAX DIM ' B “ P TH 0 76X60-*010 10 20 26 .6 0 17.10 0.46 76460-*016 16 32 38 .0 0 28 .5 0 ±0.05 76460 0 - * 76460*020 10 20 26 .6 0 17.10 0.39 76 460-*026 16 32 38 .0 0 28 .5 0 ±0.05 * *

W3100

Abstract: ERC90M-02
Contextual Info: ERC90M-02 5A L O W LOSS SUPER H IG H SPEED RECTIFIER I Features • wmimtf&rnzntzvjm-ji'ru -/ Insulated package by fu lly m o ld in g . • feVp mmm&m Low V F Connection Diagram S u p e r high speed s w itc h in g . • Z f l'—t— tfLfti t z i S S i f ¡B tt

Z3.3

Contextual Info: I R atin g s and c h a r a c t e r is t ic s of F u ji I G BT 2 M B I 5 0 J —* 0 6 0 1. M BT Module (TEN TAT IVE ) O u tlin e Drawing U n it : sa * Isolation Voltage : AC2500V 1minute Z- <¿5.4 •O o Q C : |ii lí ■C3 I ! -I o , t .xH 3 <ï io i l !>;

AM79C901A

Abstract: 79C901 TIC106
Contextual Info: PRELIMINARY Am79C901A HomePHY Single-Chip 1/10 Mbps Home Networking PHY DISTINCTIVE CHARACTERISTICS n Fully integrated 1 Mbps HomePNA Physical Layer PHY as defined by Home Phoneline Networking Alliance (HomePNA) specification 1.1 — Optimized for home networking applications

PAL 007 E

Abstract: PAL 007 B PAL 007 c PAL 007 a PAL 007 PAL 007 data sheet AM79C901JC AM79C940b remote control encoder decoder tic 136
Contextual Info: PRELIMINARY Am79C901 HomePHY Single-Chip 1/10 Mbps Home Networking PHY DISTINCTIVE CHARACTERISTICS n Fully integrated 1 Mbps HomePNA Physical Layer PHY as defined by Home Phoneline Networking Alliance (HomePNA) specification 1.0 — Optimized for home networking applications

TIC COL 02

Contextual Info: M T 4 C 1670/1 L 6 4 K X 16 D R A M I ^ K Z R O N 64K x 16 DRAM STATIC COLUMN MODE, LOW POWER, EXTENDED REFRESH FEATURES PIN ASSIGNMENT Top View • Industry standard xl6 pinouts, tim ing, functions and packages • High-performance, C M O S silicon-gate process

Contextual Info: SANKEN ELECTRIC CO LTD S5E D • 7^^0741 0QQ11BL Ô2L » S A K J Silicon PNP Epitaxial Planar Darlington ■Maximum Ratings Item Ta = 25°C Symbol Ratings Unit Collector-to-Base Voltage VCBO -1 2 0 V Collector-to-Emitter Voltage VCEO -1 2 0 V Emitter-to-Base Voltage

HPR25

Abstract: AM79C901 circuit diagram of new holland fx 58
Contextual Info: P R E L IM IN A R Y AMD£I Am79C901 HomePHY1" Single-Chip 1/10 Mbps Home Networking PHY DISTINCTIVE CHARACTERISTICS • Fully integrated 1 Mbps HomePNA Physical Layer PHY as defined by Home Phoneline Networking Alliance (HomePNA) specification 1.1 — Optimized for home networking applications

4218160LE-60

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD 42S18160, 4 2 1 8 1 6 0 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The ,uPD42S18160, 4218160 are 1,048, 576 words by 16 bits CMOS dynamic RAMs. The fast page mode and

UPD444

Abstract: UPD444-1 MPD444
Contextual Info: fiPD444 /¿PD444-1 /iPD444-2 /iPD444-3 ^ NEC NEC Electronics U.S.A. Inc. Microcomputer Division 1024 x 4-BIT STATIC CMOS RAM DESCRIPTION T h e /LfPD444 is a high-speed, lo w p o w e r s ilic o n gate C M OS 4 0 9 6 b it s ta tic R A M o rg a ­ n ize d 1 02 4 w o rd s b y 4 b its . I t uses DC stable s ta tic c ir c u itr y th ro u g h o u t and th e re ­

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT jUPD42S17800,4217800 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE ★ Description The ¿¡PD42S17800, 4217800 are 2,097,152 words by 8 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.

SC11290

Abstract: sc11290cn SC1129 SC112 VP05
Contextual Info: SC11290 DTMF Transceiver With Call Progress Detection V SIERRA SEMICONDUCTOR 22-PIN DIP PACKAGE □ □ □ D T M F g e n e ra to r and receiv er E xcellen t sp eech im m u nity T ri-S ta te o u tp u ts 4 -b it h ex a ­ d ecim al fro m receiv er □ A C -C o u p led , internally-b iased

3R5S

Contextual Info: FUJI ;± m « i Fuji New Semiconductor Products 1800V/800A/1 ± * § S IG B T iy n .- A ' 1 M B I 8 0 0 P N MB - 1 8 0 IGBT Low loss • high speed switching IGBT Modules H 4^ JH Features * ¡ ¡¡REEv High voltage, high current • 7 ^ High speed sw itching

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT / IP D 4 2 S 1 7 8 0 0 L , 4 2 1 7 8 0 0 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description The ¿¡PD42S17800L, 4217800L are 2,097,152 words by 8 bits CMOS dynamic RAMs. The fast page mode

Contextual Info: WMD4M4-XXX WHITE /MICROELECTRONICS 4Mx4 CMOS FPM Dynamic RAM advanced* FEATURES • Fast Access Tim e tRAc : 70, 8 0 ,1 00ns ■ TTL-Compatible Inputs and Outputs ■ Pow er Supply: 5V + 0.5V ■ RAS-Only Refresh ■ Packaging: ■ CAS Before RAS Refresh

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT jtfP D 4 2 6 4 8 0 0 , 4 2 6 5 8 0 0 64M-BIT DYNAMIC RAM 8 M-WORD BY 8-BIT, FAST PAGE MODE D e s c rip tio n Th e |iPD4264800, 4265800 are 8,388,608 w o rd s b y 8 b its d y n a m ic CMOS RAM s. The fa st page m o d e

Contextual Info: PRELIM INARY AMDH Am79C901 HomePHY Single-Chip 1/10 Mbps Home Networking PHY DISTINCTIVE CHARACTERISTICS Fully in tegrated 1 M bps H om ePNA Physical Layer PHY as defined by Hom e Phoneline N etw orking A llian ce (H om ePN A ) s p ecificatio n 1.1 — Optimized for home networking applications

Contextual Info: W “ *— Q-dtjgrl PO-gf- Q-W/. Abv- 5 ^3 ' A •Yftrn«.Q>McK Ì , ~TA of sh all be n e ith e r r e p r o d u c e d , c o n io d . way w h a t s o e v e r for the use o ■ n a y third p a rty .n o r used for the m a n u fa c turing p u rp o s e s w it h o u t

Contextual Info: NEC pPD4216100, 4217100 16,777,216 X 1-Bit Dynamic CMOS RAM NEC Electronics Inc. Prelim inary Information Description T he /JPD4216100 and the /JPD4217100 are fast-page dynam ic RAMs organized as 16,777,216 words by 1 bit and designed to o p e ra te from a single +5-volt power

Contextual Info: MT4LC2M8B1 S 2 MEG X 8 DRAM ¡v flic n n N DRAM 2 MEG x 8 DRAM 3.3V, FAST PAGE MODE, OPTIONAL SELF REFRESH PIN ASSIGNMENT (Top View) • JE D E C - a n d in d u stry -sta n d a rd x8 p in o u ts, tim in g , fu n ctio n s an d p ack ag es • H ig h -p e rfo rm a n ce C M O S silico n -g a te process

Contextual Info: Preliminary information •■ I l AS4C1M16E5 AS4LC1M16E5 A 5V/3V l M x l ó CMOS DRAM EDO Features • Organization: 1,048,576 words x 16 bits • High speed ■Read-modify-write >TTL-compatible, three-state DQ >JEDEC standard package and pinout - 4 5 /5 0 /6 0 ns RA S access tim e

42S1780

Contextual Info: DATA SHEET ¿iPD42S17800,4217800 MOS INTEGRATED CIRCUIT 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE ★ Description The ¿¿PD42S17800,4 2 1 7 8 0 0 are 2,097,152 w ords by 8 bits C M OS dynam ic RAMs. The fast page mode capability realize high speed access and low power consum ption.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD4 2 S 1 8 1 6 0 L , 4 2 1 8 1 6 0 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE The ,uPD42S18160L, 4218160L are 1,048, 576 words by 16 bits CMOS dynamic RAMs. The fast page mode and

FUJI IGBT

Contextual Info: FUJI J . - 7 Fuji New Semiconductor Products 12 0 0 V /5 A ± 14^ ^ JH • / J \ ^ K J ^ IG B T 1 M B 0 5 -1 2 0 , 1 M B 0 5 D -1 2 0 Features » i - - V K % < - J n v *r- V • •lil it t , RBSOA, SCSO A 4' iz) Small molded package • • Low power loss