TIC 2116 B Search Results

tp 2116

Abstract: SDA2116
Contextual Info: Nonvolatile Memory 1-Kbit EzPROM SDA2116 Preliminary data Type Ordering code Package SDA 2116 Q67100-A2128 DIP 8 Features • Word-organized programmable nonvolatile memory in n-channel floating-gate technology • 128 x 8 bit organization • Supply voltage 5 V, programming voltage 24 V

tic 2116 B

Abstract: tic 2116 M PHA1617
Contextual Info: w an A M P co m pa n y Wireless Power Module, 30W 1.6 -1.7 GHz PHA1617-30 Features • D esig n ed fo r Cellular B a s e Station A pplications • Input a n d O u tpu t M atched to 50£1 • Class AB: -3 0 d B c T vp 3rd IM D at 30 W atts PEP • T herm ally T rack in g Bias D iod e Includ ed

3004x

Abstract: SIEMENS B 58 451 GE 639 transistor 2114D transistor bfx 73 STATIC RAM 2114 Q2114 tic 2116 M
Contextual Info: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j/ 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS A K T IE NÖES EL LS CH AF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for

2SJ420

Contextual Info: Ordering num ber: EN5064A 2SJ420 P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications F e a tu re s • Low ON resistance. • U ltrahjgh-speed switching. • 2.5V drive. A b so lu te M axim um R a tin g s a tT a = 25°C Drain-to-Source Voltage

EN5077

Abstract: 2SJ421 3tf5 TA-51
Contextual Info: Ordering number :E N 5077 2SJ421 No.5077 P-C hannel Silicon MOSFET Very High-Speed Switching Applications F e a tu re s •Low ON resistance. • Very high-speed switching. • 4V drive. A b s o lu te M axim um R a tin g s a tT a = 25°C Drain-to-Source Voltage

2SJ419

Abstract: qa25 x1cv
Contextual Info: O rd e rin g n u m b e r :E N 5313A 2SJ419 No.5313A P-Channel MOS Silicon FET SANYO i Ultrahigh-Speed Switching Applications F e a tu r e s • Low ON-resistance. • U ltrahigh-speed switching. •2.5V drive. A b s o lu te M axim um R a tin g s a t Taa = 25°C

BR-2/PT156

Abstract: tic 2116 M tc 2216
Contextual Info: PRECISION SENSING ELEMENT TY PE FT _ . _ j _ Type PT156 1 Kilohm ±1% BALCO sensing elements are in-stock for immediate delivery. L-*H _ Custom resistance tolerances to ±0.05% with: • TCR char: +4300ppm/°C ±50ppm/°C between 25°C and 100°C.

intel 2116

Abstract: ICS1735 ACHI IR 6000 Intel AP-22 446905 604 LEM LS 74145 LV-EZ 745875 2116 ram
Contextual Info: APPLICATION NOTE AP-22 020100010201020101010001020100010201000100 . C * H>* • >/ r/ t IC'M» , „ l !^ 1 ' w 4 ^ r ^ n j ' . * ' >• jifv J»i? l-il :.U?' ?-• -~.?1 - ,4't '^ ’v • R’ fT "’* :;■« -^ ''^ ¿ ,* ’3 '' u * 3 V * r In te l C o r p o r a tio n assum es no re s p o n s ib ility fo r the use of any c irc u itry o r s o ftw a re o th e r th an c ir c u itr y o r s o ftw a re e m b o d ie d in an In te l p r o d u c t. N o o th e r c ir c u it p a te n t licenses are im p lie d .

Contextual Info: 4- 2U60CBook Page 1 Tuesday, July 7, 1998 4:25 PM M i c r o c h 24LC21A i p IK 2.5V Dual Mode I2C Serial EEPROM FEATURES PACKAGE TYPES • S in g le s u p p ly w ith o p e ra tio n d ow n to 2 .5 V • C o m p le te ly im p le m e n ts D D C 1 ™ /D D C 2 ™

921 125 1115 03

Abstract: 4123 RELAY asea, electromagnetic 110 v dc relay RK 92-1 E kk 0952 T 1621 MH RRIC asea relay asea over current relay rk 427 "rk 427"
Contextual Info: 1E Small over over-volta instantaneous electromagnetic measuring relays for d.c. or a.c. supply, 16, 50 and 60 Hz small dimensions resistant to mechanical shock and vibration fixed or adjustable operating value a variety of mounting arrange­ ments: fixed mounting with or

Contextual Info: 6A05/P600A THRU SEMICONDUCTOR 6A10/P600M TECHNICAL DATA FORWARD INTERNATIONAL ELECTRONICS LTD- TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 6.0 Amperes FEATU R ES * Low cost ‘ Low leakage * Low fo r w a r d v o lt a g e d rop

sRAM 2116

Abstract: DPS256P8-100C DPS256P8-120C DPS256P8-150C STATIC RAM 2114
Contextual Info: DENSE-PAC M I C ROS YS TE MS 07E D | S T S ^ I S Dense~Pac Microsystems, ine. DDDDlbM 2 |~~ DPS256P8 CMOS SRAM 25 6K X -PRELIMINARY- D E S C R IP T IO N : The DPS256P8 is a fully static asynchronous Random Access Memory SRAM and is organized as 128Kx 8.

westinghouse transistors

Abstract: tic 2116 B WESTINGHOUSE transistor 2N3442 transistor 2n3442
Contextual Info: “□ o s: m m x T D 64-673 Page 3 > Silicon Power Transistors J E D E C Type 2N3442 Westinghouse cn -*J N sO For Switching, Amplifier and Regulator Applications 10 Amperes, 117 Watts O' ISJ Application The Westinghouse 2N3442 is an N PN dif­ fused transistor. This general-purpose tran­

balco resistor

Abstract: balco BR-2/PT156
Contextual Info: PRECISION SENSING ELEMENT TYPE PT "Profit from PRECISION” BALCO sensing element: • Type PT156 1000 ohm sensor is the ultimate in Balco technology with resistance tolerances to ±0.05% . • TCR char: +4300ppm/°C ±50ppm/°C between 25°C and 100°C.

Westinghouse

Abstract: westinghouse transistors westinghouse semiconductor 2N3432 WESTINGHOUSE ELECTRIC 2N3429 WESTINGHOUSE ELECTRIC fuse 2N3430 2n3429-33 2N3431
Contextual Info: Westinghouse Typical Applications Amplifiers Inverters Switching Circuits Ignition Systems Industrial Controls Modulators Regulators Servo Systems Power Supplies Sweep Circuits Pulse Generators Logic Circuits Oscillators Active Filters T D 54-661 Page 3

HPB-R2

Abstract: FBR111 "network interface cards"
Contextual Info: Wm H E W L E T T 1 "KM P A C K A R D Fiber Optic Transmitter and Receiver Data Links for 155 MBd Technical Data HFBR-1116T Transmitter HFBR-2116T Receiver Features Description • Full Compliance w ith the Optical Performance Requirements o f the ATM Forum UNI SONET OC-3

Contextual Info: Panasonic CCD Linear Image Sensor MN3610H 2048-Bit High-Responsivity CCD Linear Image Sensor • O v e rv ie w ■ P i n Assignm ents T he M N 3 61 0 H is a 2048-p ixel high sensitivity C C D linear image sensor combining photo-sites using low dark output

resolver natel

Abstract: natel
Contextual Info: ATEL HDR2116 ^¿]bâ\s 2 VA Output, 32-pin Hybrid. 16-bit Digital-to-Resolver Converter. Microprocessor Compatible. Features • Fully protected 2 VA output current limiting (short circuit proof) (voltage feedback transients) 0$ O r ,3 006387 Ì3 S 9 - A/T?—

Contextual Info: ATEL HDR2116 2 VA Output, 32-pin Hybrid. 16-bit Digital-to-Resolver Converter Microprocessor Compatible. F e a tu re s • Fully protected 2 VA output current lim iting (short circuit proof) (voltage feedback transients) • 1 arc-minute accuracy • 0.03% max scale factor variation

2N6793

Contextual Info: POWER MOSFET TRANSISTORS 2N6793 500 Volt, 3.0 Ohm N-Channel FEATURES DESCRIPTION • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roscom and a high transconductance.

2045C

Contextual Info: LofB'Power 199 MBs Gaittrvf-2 Stable Operational Amplifier F e a tu r e s G e n e ra l D escrip tio n • 100 M H z gain-bandwidth product • Gain-of-2 stable • Low supply current = 5.2 mA at V s = ± 1 5 V • W ide supply range = ± 2V to ± 18V dual-supply

11791

Abstract: si117
Contextual Info: urm TECHNOLOGY LT1178/LT1179 17j«,A Max, Dual and Quad, Single Supply, Precision Op Amps F€ I1TU R € S D C S C R IP T IO n • 17^tA Max Supply Current per Amplifier » 70/iV Max Offset Voltage ■ 250pA Max Offset Current ■ 5nA Max Input Bias Current

EE-25 200

Contextual Info: M MOTOROLA -Micropower Programmable Operational Am plifier T h is e x tre m e ly v e rs a tile o p e ra tio n a l a m p lifie r fe a tu re s lo w p o w e r c o n s u m p tio n a n d high inp u t im p e d a n ce . In a d d itio n , th e q u ie s c e n t c u rre n ts

Intel 8243

Abstract: Intel 8749 h 8243 pin diagram of intel p4 processor 8048 intel Intel 8048 processor 8049 82c43 8048 fujitsu intel 8049 prog
Contextual Info: NMOS INPUT/OUTPUT EXPANDER F U JIT S U MBL 8243 April 1986 Edition 2.1 NMOS INPUT/OUTPUT EXPANDER The Fu jitsu M B L 8 2 4 3 is an in p u t/o u tp u t e x p a n d e r d e sig n e d s p e c ific a lly to p ro v id e a lo w co s t m eans o f I/O e xp a n sio n fo r th e M B L 8 0 4 8 se rie s o f