TIC 160 M Search Results

74163 four bit binary counter

Abstract: LS162A 74163 pin configuration counter diagram 74161 162 bcd 74160 function table pin diagram of 74163 pin diagram of 74160 74LS163A equivalent LS160A
Contextual Info: 74160, 74161, 74163, LS160A, LS161A, LS162A, LS163A S ig n e tic s Counters '160, '162 BCD Decade Counter '161, '163 4-Bit Binary Counter Logic Products Product Specification FEATURES • Synchronous counting and loading • Two Count Enable Inputs for nbit cascading

Contextual Info: LARGE ALUMINUM ELECTROLYTIC CAPACITORS NEW U I 1 IW Snap-in Terminal Type, Miniaturized Series • Smaller case sizes than HC series • High CV series • Load life fo 3000 hours at 85°C • Voltage range of 160 ~ 450V H C c^ Smaller Item C h a ra c te ris tic s

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. SSA — LXB05HW-GF 1.70 [0.067] 2.54 [0.100] ELEC TRO -O P TIC AL CHARACTERISTICS Ta = 2 5 T PARAMETER MIN PEAK WAVELENGTH I 12,70 [0,500] I— I 0 0 ,5 0 5 1.30 P L S. 10.16 2.0 1 2 a 7 3 + Vr mcd VIEWING ANGLE 160

V54C128

Contextual Info: gr VITELIC f V54C128 FAMILY HIGH PERFORMANCE, 128K x 8 BIT, PSEUDOSTA TIC, CMOS RAM ADVANCED 80/80L 10/10L 12/12L CE Access Time, tCEA 80 ns 100 ns 120 ns OE Access Time, (tQEA) 35 ns 40 ns 50 ns Min. Read-Write Cycle Time, (tRC) 130 ns 160 ns 190 ns HIGH PERFORMANCE V54C128

Contextual Info: Power Transistore File Number 528 HARRIS S E M I C O N D 2N3442, 2N4347, 2N6262 S E CT OR 27E D • 4 3 0 5 5 7 1 Oül^flüT 7 H I H A S ‘T - 3 3 - 1 3 ' High-Voltage Silicon N-P-N Transistors TERMINAL DESIGNATIONS High-Power Devices for Applications in

TIC 160 D

Abstract: TIC 160 600v 100a tic 260 SII100N12
Contextual Info: SII100N12 NPT IGBT Modules Dimensions in mm 1mm = 0.0394" TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol VCES IC ICRM VGES Ptot TVj,(Tstg) Visol Conditions o TC= 25(80) C TC= 25(80)oC, tP =1ms _ Tstg TOPERATION < AC, 1min Values Units

13FLP

Abstract: sj22 serie 2sk
Contextual Info: • LD Series -TC = 25CC, A b s o lu te M a x im u m R a tin g s T yp e No Package D im en s io n s PCP 2 S J3 1 6 2 S J2 5 4 T a = 25aC V GS ÍV ) Id (A i (W i 12 ±15 1 3 5* 2 S J2 5 7 SM P 2 S J2 5 9 NMP •2SJ225 30 2 S J 37 ± 15 PC P 2 S J2 S 7 2 S J2 2 6

ELJPA100K

Abstract: IC ti 072 330KF panasonic Choke Coils CTV 3225 Panasonic Choke Coil
Contextual Info: Panasonic Chip Inductors Chip Inductors Mg & S e r ie s : C h ip Type: RF, RE, ND, NC, NA, FC, FA, SA, FB, PC, PA, RF RE ND me QA FB Size 1005 (Size 1608) (Size 2012) (Size 2520) (Size 3225) (Size 4532) Non w in d in g (RF, RE) and w ire w o u n d ty p e c h ip in ­

epm9320

Contextual Info: æqoi^ Introduction " Data Sheet This selection guide lists the available system -level features and devices from Altera: • ■ ■ ■ ■ ■ System -level features FL E X 10K devices FL E X 8000 devices Configuration EPROM devices M A X 9000 devices M A X 7000 devices

TIC 160 D

Abstract: tic 260 TIC 160 TIC 220 SII150N12 igbt 1500A
Contextual Info: SII150N12 NPT IGBT Modules Dimensions in mm 1mm = 0.0394" TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol VCES IC ICRM VGES Ptot TVj,(Tstg) Visol Conditions o TC= 25(80) C TC= 25(80)oC, tP =1ms _ Tstg TOPERATION < AC, 1min Values Units

1000V P-channel MOSFET

Abstract: MOSFET 1000v 30a OM6219SP1 OM6220SP1 OM6221SP1 OM6222SP1 1MI100 p-channel 250V 30A power mosfet
Contextual Info: OM6219SP1 OM6221SP1 OM622QSP1 OM6222SP1 DUAL UNCOMMITTED POWER MOSFETS IN LOW PROFILE PLASTIC POWER PACKAGE 100V Thru 1000V, Up To 30 Amp, N-Channel MOSFETs With Low R ds oii Characteristics FEATURES Isolated High Density Package High Current Dual MOSFETs

2N3234

Abstract: westinghouse transistors 2N3232 2N3235 westinghouse semiconductor data westinghouse semiconductor 2N3233 2N3232-2N3234 WESTINGHOUSE powerex cd
Contextual Info: Westinghouse M a x im u m R a tin g s Voltage •Cotlector-Emitter, VCE0, Volts. •Collector-Base, Vcbo * Volts. •Emitter-Base, V ebo» Volts. Current *Collector, I q, Amps.

PC78L05J

Contextual Info: SEC NEC Electronics Inc. D es crip tio n //P C 78 L 0 0J SERIES THREE-TERMINAL 0.1 A POSITIVE VOLTAGE REGULATORS P in C o n fig u ra tio n T h e /uPC78L00J series of th re e term inal regulators are m o n o lith ic po sitive vo ltag e reg u lato rs w h ich featu re

SII50N12

Contextual Info: SII50N12 NPT IGBT Modules Dimensions in mm 1mm = 0.0394" TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol VCES IC ICRM VGES Ptot TVj,(Tstg) Visol Conditions o TC= 25(80) C TC= 25(80)oC, tP =1ms _ Tstg TOPERATION < AC, 1min Values Units

Contextual Info: SMT LED LAMP PLCC-2 PACKAGE OPTOELECTRONICS H IG H E F F IC IE N C Y RED YELLO W Q T L P 6 7 0 C -2 Q T L P 6 7 0 C -3 GREEN AIG aA s RED PACKAGE D IM E N S IO N S Q T L P 6 7 0 C -4 Q T L P 6 7 0 C -7 D ESC R IPTIO N The QT Optoelectronics surface mount lamps are

TIC 160

Abstract: TIC 160 D tic 260 SII200N12
Contextual Info: SII200N12 NPT IGBT Modules Dimensions in mm 1mm = 0.0394" TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol VCES IC ICRM VGES Ptot TVj,(Tstg) Visol Conditions o TC= 25(80) C TC= 25(80)oC, tP =1ms _ Tstg TOPERATION < AC, 1min Values Units

Contextual Info: EO SM T LED LAMP PLC C -2 PACKAGE Om ELEUROm CS H IG H E F F IC IE N C Y RED YELLO W Q T L P 6 7 0 C -2 Q T L P 6 7 0 C -3 GREEN A IG aA s RED Q T L P 6 7 0 C -4 Q T L P 6 7 0 C -7 D E SC R IPTIO N The QT Optoelectronics surface mount lamps are designed with a flat top and sides for automatic

Contextual Info: 2SC1212, 2SC1212A Silicon NPN Epitaxial HITACHI Application Low frequency power amplifier Outline T O -126 MOD 1 IP 1 1. Em itter 2. Collector 3. Base 1 3 Absolute Maximum Ratings Ta 25°C = Ratings Item Symbol 2SC1212 2SC1212A Unit Collector to base voltage

92CS-43394

Abstract: FRK6766D FRK6766H FRK6766M FRK6766R uls12
Contextual Info: Radiation-Hardened M FRK6766M, FRK6766D FRK6766R, FRK6766H File N um b er 2172 Radiation-Hardened N-Channel Power MOSFETs Radiation-Hardened to: 1 Megarad Si 2 x 1012 Neutrons N -C H A N N EL E N H A N C E M E N T M ODE

s41* hall sensor

Abstract: SS400 SS400-3 SS411A S8400 SS4003
Contextual Info: S S 4 0 0 Series Solid State Sensors Digital Position S e n so rs FEATURES• S.8-30 VDC supply voltage • Digital curient sinking output • 3 pin in-line PCEJ tsi minals ■ Quad -H all design vi r tual ly gl im ¡nates mechanical stress effects ■ Temperat-ire com pensated

1N4933

Abstract: 1N4934 1N4935 1N4936 1N4937 1N4942
Contextual Info: 1N 4933 TH R U 1N 4937 FAST SWITCHING VOLTAGE - 50 to 600 Volts PLASTIC RECTIFIER CURRENT - 1.0 Ampere FEATURES DO-41 • H ig h s u rg e c u r re n t c a p a b ility . • P la s tic p a c k a g e h a s U n d e rw rite rs L a b o ra to ry F ia m m a b ility C la s s ific a tio n 9 4 V - 0 u tiliz in g

TIC 160

Abstract: tic 120 SII75N12 TIC 160 D
Contextual Info: SII75N12 NPT IGBT Modules Dimensions in mm 1mm = 0.0394" TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol VCES IC ICRM VGES Ptot TVj,(Tstg) Visol Conditions o TC= 25(80) C TC= 25(80)oC, tP =1ms _ Tstg TOPERATION < AC, 1min Values Units

Contextual Info: 4582B CARRY LOOKAHEAD GENERATOR D E S C R IP T IO N — The 458 2B is a Carry Lookahead G enerator w h ic h p r o v i d e s s p e e d lookahead over w o rd lengths o f m ore than fo u r bits. The device has a C arry In p u t Cn , fo u r active LO W C arry

43403

Abstract: FRK6766D FRK6766H FRK6766M FRK6766R 10-35* DIODE uls12 92CS-43398 1E1A
Contextual Info: Radiation-Hardened M FRK6766M, FRK6766D FRK6766R, FRK6766H File N um b er 2172 Radiation-Hardened N-Channel Power MOSFETs Radiation-Hardened to: 1 Megarad Si 2 x 1012 Neutrons N -C H A N N EL E N H A N C E M E N T M ODE