TIC 160 D Search Results

74163 four bit binary counter

Abstract: LS162A 74163 pin configuration counter diagram 74161 162 bcd 74160 function table pin diagram of 74163 pin diagram of 74160 74LS163A equivalent LS160A
Contextual Info: 74160, 74161, 74163, LS160A, LS161A, LS162A, LS163A S ig n e tic s Counters '160, '162 BCD Decade Counter '161, '163 4-Bit Binary Counter Logic Products Product Specification FEATURES • Synchronous counting and loading • Two Count Enable Inputs for nbit cascading

Contextual Info: LARGE ALUMINUM ELECTROLYTIC CAPACITORS NEW U I 1 IW Snap-in Terminal Type, Miniaturized Series • Smaller case sizes than HC series • High CV series • Load life fo 3000 hours at 85°C • Voltage range of 160 ~ 450V H C c^ Smaller Item C h a ra c te ris tic s

Contextual Info: Power Transistore File Number 528 HARRIS S E M I C O N D 2N3442, 2N4347, 2N6262 S E CT OR 27E D • 4 3 0 5 5 7 1 Oül^flüT 7 H I H A S ‘T - 3 3 - 1 3 ' High-Voltage Silicon N-P-N Transistors TERMINAL DESIGNATIONS High-Power Devices for Applications in

Contextual Info: Slgnetlc* Document No. 853-1410 ECNNo. 96465 Date of issue January 6,1000 Status Product Specification FAST 74F5302 Fiber Optic Dual LED /Clock Driver FAST Products TYPICAL PROPAGATION DELAY TYPE FEATURES • TTL inputs • Output enable control • High currant source and sink

TIC 160 D

Abstract: TIC 160 600v 100a tic 260 SII100N12
Contextual Info: SII100N12 NPT IGBT Modules Dimensions in mm 1mm = 0.0394" TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol VCES IC ICRM VGES Ptot TVj,(Tstg) Visol Conditions o TC= 25(80) C TC= 25(80)oC, tP =1ms _ Tstg TOPERATION < AC, 1min Values Units

AN1121

Contextual Info: Slgnetlcs Document No. 853-1409 ECN No. 08304 Date of issue December 13.1989 Status Product Specification FAST 74F5300 Fiber O p tic LED Driver FAST Products TYPE FEATU RES 74F5300 • TTL in put* TYPICAL PROPAGATION DELAY TYPICAL SUPPLY CURRENT TOTAL 8.0mA

13FLP

Abstract: sj22 serie 2sk
Contextual Info: • LD Series -TC = 25CC, A b s o lu te M a x im u m R a tin g s T yp e No Package D im en s io n s PCP 2 S J3 1 6 2 S J2 5 4 T a = 25aC V GS ÍV ) Id (A i (W i 12 ±15 1 3 5* 2 S J2 5 7 SM P 2 S J2 5 9 NMP •2SJ225 30 2 S J 37 ± 15 PC P 2 S J2 S 7 2 S J2 2 6

ELJPA100K

Abstract: IC ti 072 330KF panasonic Choke Coils CTV 3225 Panasonic Choke Coil
Contextual Info: Panasonic Chip Inductors Chip Inductors Mg & S e r ie s : C h ip Type: RF, RE, ND, NC, NA, FC, FA, SA, FB, PC, PA, RF RE ND me QA FB Size 1005 (Size 1608) (Size 2012) (Size 2520) (Size 3225) (Size 4532) Non w in d in g (RF, RE) and w ire w o u n d ty p e c h ip in ­

epm9320

Contextual Info: æqoi^ Introduction " Data Sheet This selection guide lists the available system -level features and devices from Altera: • ■ ■ ■ ■ ■ System -level features FL E X 10K devices FL E X 8000 devices Configuration EPROM devices M A X 9000 devices M A X 7000 devices

TIC 160 D

Abstract: tic 260 TIC 160 TIC 220 SII150N12 igbt 1500A
Contextual Info: SII150N12 NPT IGBT Modules Dimensions in mm 1mm = 0.0394" TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol VCES IC ICRM VGES Ptot TVj,(Tstg) Visol Conditions o TC= 25(80) C TC= 25(80)oC, tP =1ms _ Tstg TOPERATION < AC, 1min Values Units

1000V P-channel MOSFET

Abstract: MOSFET 1000v 30a OM6219SP1 OM6220SP1 OM6221SP1 OM6222SP1 1MI100 p-channel 250V 30A power mosfet
Contextual Info: OM6219SP1 OM6221SP1 OM622QSP1 OM6222SP1 DUAL UNCOMMITTED POWER MOSFETS IN LOW PROFILE PLASTIC POWER PACKAGE 100V Thru 1000V, Up To 30 Amp, N-Channel MOSFETs With Low R ds oii Characteristics FEATURES Isolated High Density Package High Current Dual MOSFETs

Contextual Info: CCT i f '9& fiPD 424102 4,194,304 x 1-Bit jW /X V * F ImJ W NEC Electronics Inc. Dynamic CMOS RAM Preliminary September Description Pin Identification The /L7PD424102 is a static-column dynamic RAM orga­

SII50N12

Contextual Info: SII50N12 NPT IGBT Modules Dimensions in mm 1mm = 0.0394" TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol VCES IC ICRM VGES Ptot TVj,(Tstg) Visol Conditions o TC= 25(80) C TC= 25(80)oC, tP =1ms _ Tstg TOPERATION < AC, 1min Values Units

TIC 160

Abstract: TIC 160 D tic 260 SII200N12
Contextual Info: SII200N12 NPT IGBT Modules Dimensions in mm 1mm = 0.0394" TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol VCES IC ICRM VGES Ptot TVj,(Tstg) Visol Conditions o TC= 25(80) C TC= 25(80)oC, tP =1ms _ Tstg TOPERATION < AC, 1min Values Units

s41* hall sensor

Abstract: SS400 SS400-3 SS411A S8400 SS4003
Contextual Info: S S 4 0 0 Series Solid State Sensors Digital Position S e n so rs FEATURES• S.8-30 VDC supply voltage • Digital curient sinking output • 3 pin in-line PCEJ tsi minals ■ Quad -H all design vi r tual ly gl im ¡nates mechanical stress effects ■ Temperat-ire com pensated

1N4933

Abstract: 1N4934 1N4935 1N4936 1N4937 1N4942
Contextual Info: 1N 4933 TH R U 1N 4937 FAST SWITCHING VOLTAGE - 50 to 600 Volts PLASTIC RECTIFIER CURRENT - 1.0 Ampere FEATURES DO-41 • H ig h s u rg e c u r re n t c a p a b ility . • P la s tic p a c k a g e h a s U n d e rw rite rs L a b o ra to ry F ia m m a b ility C la s s ific a tio n 9 4 V - 0 u tiliz in g

TIC 160

Abstract: tic 120 SII75N12 TIC 160 D
Contextual Info: SII75N12 NPT IGBT Modules Dimensions in mm 1mm = 0.0394" TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol VCES IC ICRM VGES Ptot TVj,(Tstg) Visol Conditions o TC= 25(80) C TC= 25(80)oC, tP =1ms _ Tstg TOPERATION < AC, 1min Values Units

Contextual Info: 4582B CARRY LOOKAHEAD GENERATOR D E S C R IP T IO N — The 458 2B is a Carry Lookahead G enerator w h ic h p r o v i d e s s p e e d lookahead over w o rd lengths o f m ore than fo u r bits. The device has a C arry In p u t Cn , fo u r active LO W C arry

PD424402

Abstract: D424* NEC
Contextual Info: pPD424402 1,048,576 X 4-Bit Dynamic CMOS RAM IH H i W NEC Electronics Inc. Description Pin Configurations ThejuPD424402 is a static-column dynamic RAM organ­ ized as 1,048,576 by 4 bits and designed to operate from a single + 5-volt power supply. Advanced polycide

BC307-40

Abstract: BC807-40 TRANSISTOR BC 119 fl 807 BC807-25 SAI SOT23 BC 807-25
Contextual Info: B< 807-16/ BC 807-25 BC 807-40 m \ kkin <; di u ; r \ m G en eral P u rp o se t ransistor P N P Silicon SOI 23 M a x im u m K a tin g s Ta=25 C unless otherw.se noted Symbol Value Unit Collector-Emitter Voltage VCEO •45 V Collector-Base Voltage VCBO •50

6310A

Abstract: B316J
Contextual Info: SN74ALS6310A, SN74ALS6311A STATIC COLUMN AND PAGE MODE ACCESS DETECTORS D 3 0 2 0 . JUN E 1 9 8 7 Detects Present Row Equal to Last Row Address R E V IS E D D E C E M B E R 1 9 8 9 D W OR N PACKAGE ITO P VIE W ! High-Performance Compare: 'A L S 6 3 1 0 A CLK to HSA - 18 ns

diode ba110

Abstract: BA142 BA110 BA 141 diode BB142 BB141 ba112 BA 30 C Diode BAY 45 S3 marking DIODE
Contextual Info: Silicon Capacitance Diodes Variable Capacitance Silcon Diodes for automatic frequency control Type BA 110 BA 110 G 1 C h a ra c te ris tic s @ T am b = 2 5 °C @ VR = 2 V f = 30 M Hz @ Ip = 60 m A @ VR = 10V r¡ Q Q l/f V I r nA 1 540 < 0,95 < 50 V BR}R V

Contextual Info: SANK EN E L E C T R I C CO LTD 55E » 7^0741 D O D I G ^ G Ö4Q « S A K J 'J TA302A Silicon PNP Epitaxial Planar Darlington •M axim um Ratings Ta = 25°C ÉïSilïK Collector-to-Base Voltage vm m VCBO -5 0 V C ollector-to-Em itter Voltage VCEO -5 0 V

Contextual Info: Preliminary Data Sheet 12126 01/98 International IÖR Rectifier QUIETlR Series 8EWF.S SURFACE MOUNTABLE FAST SOFT RECOVERY DIODE vF < 1.3V@ 8A trr = 80ns V RRM 1000 to 1200V Description/Features The 8EWF.S fast soft recovery Q U IE T lR rectifier series has been optimized for combined short