TIC 146 D Search Results

Contextual Info: LC2M0S 22-Bit Data Acquisition System AD7716 ANALOG DEVICES □ FEATURES 22-Bit Sigm a-Delta ADC Dynamic Range of 105 dB 146 Hz Input ±0.003% Integral Nonlinearity On-Chip Low-Pass Digital Filter Cutoff Program m able from 584 Hz to 36.5 Hz Linear Phase Response

Contextual Info: SANKEN E L E C T R I C CO LTD SSE D SLA4340 • 7 cn ü 7 4 1 0001254 =134 « S A K J Silicon NPN Triple Diffused Planar Darlington Silicon PNP Epitaxial Planar Darlington ■M axim um Ratings Item rra=2 5 o Symbol PNP SIÄÄf Collector-to-B ase Voltage VCBO

34ba

Contextual Info: D TbE • fc.34bûDE GDOmflB TTH M Series SPECIFICATIONS SUBJECT TO CHANGE WITHOUT NO TICE Standard Size Slide Switches SPECIFICATIONS FEATURES Contact rating: 300 mA at 125 VAC or 30 VDC • Bifurcated wiping contact design. Initial contact resistance: 20 milliohms max.

Contextual Info: A S e le c t io n G u id e t o P a n e l P o t e n t io m e t e r s Meggitt Electronic Components offer a wide range of high quality analogue interface solutions, via spindles with knobs, dials, slide or edgewheel operation. S iz e M a x im u m O p e ra tio n S w itc h e s F e a t u r e s

Contextual Info: APT20M13PVR ADVANCED POW ER Te c h n o l o g y 200V 146A 0.013ft POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also

MAX1467

Contextual Info: ADVANCE INFORMATION All Information in this data sheet is preliminary y v iy jx i> M and subject to chanqe. 6/95 +3V, Low-Power, 8-Channel, S erial 12-Bit DAS G eneral Description _ Features ♦ 8-Channel Single-Ended or 4-Channel Differential

TLP806

Abstract: TLP815 TLP805
Contextual Info: Photo Diode E le c tro -o p tic a l C h a ra c te ris tic s T a -2 5 ° C C la ssific a tio n T y p e No. Package is c (MA) E (m W /em 2) Id M A X (nA) Vr (V) Vn (V) *7 (deg) V isit* » Lig ht Cut-o ff M a tc h e d 1RED TLN101A 05 Package M etal TPS708

R306120

Abstract: R30620 R30640 R30660 R30680 S306100 S30620 S30640 S30660 S30680
Contextual Info: Silicon Power Rectifier S /R 506 Seríes Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes Notes: 1. 1 / 4 - 2 8 2. Full threads within 2 1 /2 threads 3. Standard polarity: Stud is cathode Reverse polarity. Stud is anode p A B C D E F G H J K M

5900AS

Abstract: R306120 R30620 R30640 R30660 R30680 S306100 S30620 S30640 S30660
Contextual Info: Silicon P o w er Rectifier S/R306 Series Dim Inches Millimeter Minimum Maximum Minimum Maximum Notes Notes: 1. 1 /4 - 2 8 2. Full threads within 2 1 /2 threads 3. Standard polarity: Stud is cathode Reverse polarity: Stud is anode A B C D E F G H J K M N P

1N1184A

Abstract: 1N1189 1N1184 1N1183 1N1183A 1N1185 1N1185A 1N1186 1N1190 1N3765-1N3768
Contextual Info: Silicon Power Rectifier 1N1183—1N1190, 1N3765-1N3768 Dim 1 1 1 M illim eter Minimum Maximum Minimum Maximum Notes 1 □ 1 Inches Notes: 1. Full threads within 2 1 /2 threads 2. Standard Polarity: Stud is Cathode Reverse Polarity: Stud is Anode A B C D E

tic 1060

Contextual Info: Silicon Power Rectifier S / R 4 2 Series ~H M h - »I A B C D F G H J K M R T AA -c— - L_ - Ir . t 1 - r r A < 1 ^ A M illim eter Minimum Maximum Minimum Maximum Notes AA B J I Dim. Inches _ _ _ _ 1.050 1.060 1.166 4.70 .640 .233 .745 .373

1N1183

Abstract: 1N1183A 1N1184 1N1184A 1N1185 1N1185A 1N1186 1N1186A N1183-1N1190
Contextual Info: Silicon Power Rectifier N1183—1N1190, 1N 3 7 6 5 -1 N 3 7 6 8 Dim. Inches M illim eter Minimum Maximum Minimum Maximum Notes L U, il J F Notes: 1. Full th re ad s within 2 1 /2 th re ad s 2. Standard Polarity: Stud is Cathode Reverse Polarity: Stud is Anode

121NQ035

Abstract: 121NQ040 121NQ045 HS12135 HS12140 HS12145 EE-16-5 EE-165
Contextual Info: 120 Amp Schottky Rectifier HS12135 - HS12145 Dim. Inches A B C D E F G H J K L Microsemi Catalog Number Industry P a rt Number Working Peak Reverse Voltage R epetitive Peak Reverse Voltage HS12135* HS12140* HS12145* 121NQ035 121NQ040 121NQ045 35V 40V 45V 35V

Contextual Info: MO TOROLA SC XSTRS/R F 12E 0 I t>3b?2SM OGflbSQS T | MAXIM UM RATINGS R atin g U n it Sym bol V alue C ollector-E m itter Voltage VCEO 12 Vdc C ollector-Base Voltage VCBO 12 Vdc Em itter-Base Voltage VEBO 5 Vdc ic 200 Am p Total Device D issipation @ T a - 25°C

N41 1600

Abstract: n41 ol B65803-J-R67 B65813-J-R47 B65807-C1000-K26 B65803JR67 B65816A1011D1 B65805N125G48 B65613 n30 ol
Contextual Info: RM Cores Example of an assem bly set A d ju s tin g s c re w d riv e r fo r a s s e m b ly o n ly A d ju s tin g s c re w C ore C lam p s In s u la tin g w a s h e r 1 C oil fo rm e r C ore T h re a d e d sle e v e (g lu e d -in ) In su la tin g w a s h e r 2

129EC

Abstract: 41KW
Contextual Info: DATA SHEET AT&T 41KW Loop Divider FEATURES • 2-bit and 8-bit counters • Either 1.544 M H z or 3.152 M H z square-wave clock output 32 kHz clock output Standard LSTTL-compatible inputs and outputs DESCRIPTION The 41KW Loop Divider in.egra.ed o r c h i s a

1N1198

Abstract: 1N1191 S30460 1N143 1N2021 1N216 1N1301 S304100 S304120 S30420
Contextual Info: Silicon Power Rectifier S / R 3 0 4 Series Dim Inches M illim eter Minimum Maximum Minimum Maximum Notes 1‘h Notes: 1. Full threads within 2 1 /2 threads 2. Standard Polarity: Stud is Cathode Reverse Polarity: Stud is Anode Microsemi Catalog Number Standard

1N1196/A

Abstract: 1N1198 1N248 1N1191 1N1301 S304100 S304120 S30420 S30440 S30460
Contextual Info: Silicon Power Rectifier S/ R 3 0 4 Seríes Dim Inches M illim eter Minimum Maximum Minimum Maximum Notes i j i~ D q I j" E L Microsem i C atalog N um ber S tandard * * * * * * S 30420 S 30440 S 30460 S 30480 S304100 S304120 Notes: 1. Full th re a d s w ithin 2 1 /2

TIC47

Abstract: TIC44 thyristor tic 126 TIC45 THYRISTOR TIC45 TIC46 TIC41 TIC45 AGK tic 260 TIC44 AGK
Contextual Info: TYPES TIC 44, TIC 45. TIC46, TIC47 P-N-P-N PLANAR SILICON REVERSE-BLOCKING TRIODE THYRISTORS S I L E C T t T H Y R IS T O R S t 600 m A D C • 30 thru 200 V O L T S Rugged, One-Piece Construction with Standard TO -18 100-mil Pin-Circle Configuration mechanical data

TIC 122 Transistor

Abstract: bc 147 B transistor FOR TRANSISTOR BC 149 B BC 148 TRANSISTOR transistor 45 f 122 NPN transistor bc 148 transistor bc 146 BC 148 L transistor bc 148 transistor BC 157
Contextual Info: .2 5 C D • 023SbO S NPN Silicon Transistors GQGMCH? *? MSIEG ■ _ W ~/l SIEMENS A K T IE N G E S E L L S C H A F C 1 2 1 1 ! B C 122 ! - B C 123 Î BC 121, BC 122, and BC 123 are miniature epitaxial NPN silicon planar transistors in U 32

Contextual Info: MOTOROLA MC1436,C MC1536 SEMICONDUCTOR TECHNICAL DATA 2 High Voltage, Internally Compensated Operational Amplifier OPERATIONAL AMPLIFIER SILICON MONOLITHIC INTEGRATED CIRCUIT The MC1436, C was designed for use as a summing amplifier, integrator, or amplifier with operating characteristics as a function of the external feedback

Contextual Info: W hü1 H E W L E T T mLttM P A C K A R D NPN Silicon Bipolar Common Emitter Transistor T f e c h n ic a l D a t a AT-38043 Features • Operates Over a Wide Range of Voltages and Frequencies • +25.0 dBm P| d[5 and 60% Collector Efficiency @ 900 MHz, 4.8 Volts, Typ.

AT-38043

Contextual Info: What HEW LETT* mLliM P A C K A R D NPN Silicon Bipolar Common Emitter Transistor Technical Data AT-38043 Features • Operates Over a Wide Range of Voltages and Frequencies • +25.0 dBm P| d[5 and 60% Collector Efficiency @ 900 MHz, 4.8 Volts, Typ. • 15 dB GldB @ 900 MHz,

2SC4235

Contextual Info: > V J- l - 7 > v X $ Switching Power Transistor HFX series 3a 2SC4235 NPN (T3W 80HFX) I O u t l i n e Dimensions C ase : M T 0 -3 P Absolute Maximum Ratings m Item le n Symbol @ T s tg Storage Tem perature Junction T em perature •3 V 9 9 ■ X -^H i Collector to B ase Voltage