TIC 136 D Search Results

transistor BD 141

Contextual Info: 25C D • aaasbos 0 0 0 4 3 3 7 3 ISIEG r TW 3-/7 ÖA337 PIMP Silicon Transistors D SIEMENS AKTIENGESELLSCHAF — BD 136 BD 138 BD 140 For AF d river and o u tp u t stages of m e d iu m p erform ance BD 136, BD 138, and BD 1 4 0 are epitaxial PNP silicon planar transistors in TO 126

FST19035

Abstract: FST19040 FST19045 FST19050
Contextual Info: Low Vf S c h o tt k y Powermod FST19035 - FST19050 Dim. Inches Max. Min. 1 2 3 Common Cathode m 1 2 3 A=Common Anode 0 6 0 1 2 3 D=Doubler Notes: Baseplate: Nickel plated copper; electrically isolated Pins: Nickel plated copper Microsemi Catalog Number Working Peak

CPT60050

Abstract: CPT60060
Contextual Info: Schottky PowerMod CPT60050 - ¥ Baseplate A=Common Anode V 1 -1 1 H U 1 “ I- h r Baseplate Common Cathode 1 i i F u M f- i , — r n -|A [- ° N | W ° Baseplate D=Doubler CPT60060 Dim . In ch es Min. A B C E F G H N Q R U V W Max. -3.630 0.700

R3003

Abstract: FST30035 FST30040 FST30045 FST30050
Contextual Info: S c h o tt k y Pow erMcx FS1f30035 FS1r30050 Dim. Inches V Baseplate A=Common Anode V Baseplate Common Cathode 1/4-20UNC with Captive Lockwasher °N | W ° Max. -1.350 0.700 -3.140 -0.280 2.450 1.400 0.800 0.625 3.160 3.650 0.300 Min. _ 34.29

Contextual Info: & 9-BIT MAGNITUDE COMPARATOR SYNERGY SEMICONDUCTOR DESCRIPTION FEATURES • 1400 ps Max. Propagation Delay. The SY10E/100E/101E166 is a 9-bit magnitude comparator designed for use in new, high performance ECL systems. The E166 compares the binary value of two 9-bit words and indicates

FPT131

Abstract: FPT100A FPT100 FPT100B FPT101 FPT110 FPT110A FPT110B FPT120 FPT120A
Contextual Info: 1-13 Phototransistors 1 Min T yp <CE it VCE = 5 .0 V mA M in T yp M ax 30 50 H = 5.0 m W /cm 2 0.2 1.4 VCEO I q = 1.0 mA V D e v ic e No. FPT100 FPT100A FPT100B FPT101 FPT110 D e s c rip tio n Plastic, Dome Lens General Purpose VCE(sat) H = 2 0 m W /c m 2 t f / t ,

TIC 138

Abstract: anzac termination insensitive mixer ts.228 tic 208 tic 136 tic 122 tic 234
Contextual Info: TABLE OF CONTENTS Cantenis G e n e ra l page Product Section F in d e r. 1 Company In tro d u c tio n . 4

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC39V37 4 2 A 3 .7 —4.2G H z BAND 8 W INTERNALLY MATCHED GaAs FET DESCRIPTION T h e M G F C 3 9 V 3 7 4 2 A is a n in te m a lly im p e d a n c e -m a tc h e d G aA s p o w e r F E T especially designed fo r use in 3 .7 ~ 4 .2

Contextual Info: SANKEN ELECTRIC CO LTD 55E D 7^^0741 GÜDIBIM TT5 « S A K J vj LA4070 Silicon PNP Epitaxial Planar Darlington •Maximum Ratings Hem T a = 25°C Symbol Ratings Unit C o lle c to r-to -B a s e V o lta g e VCBO -1 0 0 V C o lle c to r-to -E m itte r V o lta g e

Contextual Info: O K I Semiconductor MSM38S0000/MSM98S000 0.8|im Mixed 3-V/5-V Sea of Gates and Customer Structured Arrays DESCRIPTION OKI's 0.8 tm ASIC products, specially designed for mixed 3-V /5-V applications, are now available in both Sea Of Gates (SOG and Customer Structured Array (CSA) architectures. Both the SOG-based MSM38S

SBR50100PF

Abstract: SBR5090PF
Contextual Info: 50 Am o Schottky Rectifier SBR5090P - SBR501OOPF Dim. Inches Minimum A B C D E F G Microsemi Catalog Number Working Peak Reverse Voltage SBR5090PF* SBR50100PF* 90V 100V Millimeter Maximum Minimum .590 .499 1.15 .320 .090 .047 .020 .630 .510 1.40 .350 .096

AFY42

Abstract: U120 103MHZ 400M GR22B Germanium Transistor Germanium mesa SZ2B
Contextual Info: AFY42 PNP Mesa transistor for pre-stages, mixer and oscillator stages up to 900 MHz AFY 42 is a germanium PNP mesa transistor in a case 18 A 4 DIN 41 876 TO —72 . The leads are electrically insulated from the case. It is particularly suitable for use in

S30760

Abstract: R30720 R30740 R30760 S30720 S30740
Contextual Info: Silicon Power Rectifier S /R 3 0 7 Series Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes Notes: 1. 1 / 4 - 2 8 2. Full threads within 2 1 /2 threads 3. Standard polarity: Stud is cathode Reverse polarity. Stud is anode P A B C D E F G H J K M

5817SMG

Abstract: 5818SMG 5819SMG D0215AA
Contextual Info: 1 Amp Schottky Rectifier 5817SMG - 5819SMG CATHODE BAR Dim. Inches Minimum M illim e te r Maximum Minimum Maximum Notes □ > -o - 1 1 .081 .160 .130 .077 .234 A B C D E 1 » m -O h .087 .180 .155 .104 .256 2.06 4.06 3.30 1.95 5.95 2.21 4.57 3.94 2.64 6.50

4720B

Abstract: CMOS 4000B series device 4000B 4720BX
Contextual Info: 4720B/4720BX 256-BIT RANDOM ACCESS MEMORY WITH 3-STATE OUTPUT D E S C R IP T IO N — The 4 7 2 0 B /4 7 2 0 B X is a 2 5 6-B it Random Access Memory with 3-State O utputs. It has a Data Input D , eight Address inputs (A q -A ^ ), an active H IG H Write Enable Input (W E), an

Contextual Info: y n y jx iy n Low Power, 3Va Digit A /D Converter With Display Hold _ General Description _ Features The M axim MAX136 is a m o n o lith ic analog to digital converter w ith very high input impedance. It differs from the M axim ICL7136 in th a t the MAX136 provides a

74ALS136

Abstract: 74as136
Contextual Info: SN 54A LS136, S N 54A S136, SN 74 A LS1 36, S N 74 A S136 QUADRUPLE 2-INPUT EXCLUSIVE-OR GATES WITH OPEN-COLLECTOR OUTPUTS D 2 8 3 7 , M A R C H 1 9 8 4 - R E V IS E D M A Y 1 9 8 6 P ackage O ption s Include P lastic "S m a ll O u tlin e " Packages, C eram ic Chip Carriers, and S tandard

Contextual Info: H D 100136 4 -s ta g e C o u n te r /S h if t R e g is te r The HD100136 operates as either a modulo-16 up/down counter or as a 4-bit bidirectional shift register. Three Select Sn inputs determine the mode of operation, as shown in the mode select table. Two Count Enable (CEP, C ET) inputs are

Contextual Info: HIGH "Q " TOROIDAL INDUCTORS QE Series U ltra m in iatu riz e d w ith lo w height design. E x c e p tio n a lly h ig h "Q " and w id e freq u e n cy range. Freq u e n cy range o f Q E L Series I to 3l\t kH z: Q E V i, 3 to 50U kH z. A ccuracy, ^ 2 ' . M o ld e d in e p o w resin w ith

Norgren

Contextual Info: SP HJ NORGREN M/58102 Vacuum Pumps - 0,87 bar • Small, compact units • Compressed air driven • Simple to install Technical Data Ordering Information Medium: Compressed air, filtered and non-lubricated To order a vacuum pump with 80 Nl/min induced air at 6 bar operating pressure

BD 139 N

Abstract: transistor BD 141 bd139
Contextual Info: 2SC D • 023Sfc.GS 0QQ4332 4 c NPN Silicon Transistors SIEG D: BD 135 BD 137 BD 139 SIEMENS AKTIEN6ESELLSCHAF For AF driver and output stages o f m edium performance BD 135, BD 137, and BD 139 are epitaxial NPN silicon planar transistors in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . The collector is electrically connected to

Contextual Info: H D 100126 9-b it Backplane Driver fu l in bus-oriented systems where m inim al o u tp ut The H D 1 0 0 1 2 6 contains nine independent, high speed, bu ffer gates each w ith a single input and a loading or bus isolation is desired. The o u tp ut single o u tp ut.

MGFC44V

Abstract: MGFC44V6472
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC44V6472 6 . 4 — 7.2G H Z BAND 2 4 W INTERNA LLY M ATCHED GaAs FE T DESCRIPTION T h e M G F C 4 4 V 6 4 7 2 is an in te rn a lly OUTLINE DRAWING im p e d a n c e -m a tc h e d G aA s p o w e r F E T especially designed fo r use in 6 .4 ~

znr 14 k 361 varistor

Abstract: 4D821 panasonic ZNR znr k 391 varistor znr 10 k 621 varistor znr 14 k 221 varistor znr 14 k 201 varistor ERZV10V511CS znr k 621 znr 20 k 391 varistor
Contextual Info: “ZN F l ” Transient/Surge Absorbers, “Series V ” Type D Panasonic “ZNR ” Transient/Surge Absorbers (Medium and High Voltage Rating) S e rie s: Type: V D . ¿ ft A fV tSSÜ ^ “ ZN R ” T ra n s ie n t/S u rg e A b s o rb e r, S e rie s V is n e w ly