TIC 115 D Search Results

TIC 115

Abstract: BD117 to-53 HSE2000 ss2017 2N396 tic 115 d bd112
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO Of) Max (W) hFE Min *T (Hz) Max k>N Max (A) (8) ICBO r (CE)sa« 'Oper Max (Ohms) Max <°C) Package Style D vices 20 Watts or Mor . . . .5 . . . -10 . . .15 20 -25 -30

A751

Abstract: DIN 41872 BU205
Contextual Info: 5SC D • fl23SbOS Q004Ô3Ô 3 ■ SIE6 r - 3 3- o 7 NPN Silicon Power Transistor BU 205 O' SIEMENS A K T I E N G E S E L L S C H A F 34838 BU 205 is a triple diffused silicon NPN power switching transistor in a TO 3 case 3 B 2 DIN 41872 . It is outstanding for short switching times and high dielectric strength. It is

MC10800

Abstract: MC10802 MC10803 M10800 MECL/LSI processor MC10801 MC10808 f 104 z mcm6616 scats M10800
Contextual Info: MOTOROLA A d v a n c e In fo r m a tio n MECL — LSI PROGRAMMABLE 16-BIT SHIFTER FUNCTION IN TR O D U C TIO N The M C 1 0 8 0 8 P rogram m a ble M u lti- B it S h ifte r is an LS I b u ild in g b lo c k fo r s h iftin g data in a high-speed processor system . The c ir c u it

2X40

Abstract: 82CNQ030 FST8230
Contextual Info: Schottky MiniMod FST8230 F- H>A<h A Dim. Inches N, 2-PLCS.- Minimum Maximum Minimum Maximum Notes 2 3 Common Cathode p A C E F G H J K L M N P h< A > h 1 2 3 A=Common Anode o M— 3 PINS eq sp at .200 — K, ô ô ô 1 2 3 D=Doubler cl dL J= l Millimeter 1.180

10TQ035

Contextual Info: 10 Amp Schottky Rectifier S1045 —c Dim. Inches Minimum — B A B C D E F G H J K L M N P Base C athode _L_ M illim e te r Maximum Minimum .3 9 0 .0 4 5 .180 .2 4 5 .5 5 0 .139 .100 - .5 0 0 .190 .014 .0 8 0 .0 2 8 .0 4 5 .415 .0 5 5 .190 .2 6 0 .6 5 0

SSUR71

Abstract: SSUR7140 SSUR7160 400v 70a
Contextual Info: SuperSoft Recovery Rectifiers SSUR71 Dim Inches M illim eter Minimum Maximum Minimum Maximum Notes Notes: 1. Full threads within 2 1 /2 threads lT III JU F t 2. Standard Polarity; Stud is Cathode Reverse Polarity: Stud is Anode A B C D E F G H J K M N P

SSUR71

Abstract: SSUR7140 SSUR7160
Contextual Info: SuperSoft Recovery Rectifiers SSUR71 Dim. Inches M illim eter Minimum Maximum Minimum Maximum Notes Notes: 1. Full threads within 2 1 /2 threads J-L-L LÉ 2. Standard Polarity: Stud is Cathode Reverse Polarity: Stud is Anode A B C D E F G H J K M N P .667

UF1610

Abstract: UF1615 UF1620
Contextual Info: Ultra Fast Recovery Rectifiers UF1610 —C UF1620 Dim. Inches Minimum —B A B C D E F G H J K L M N P Base Cathode J . dt .3 90 .045 .180 .245 .550 .139 .100 - .500 .190 .014 .0 80 .028 .0 45 M illim eter Maximum Minimum .415 .0 55 .190 .2 60 .650 .155

Contextual Info: HIGH "Q " TOROIDAL INDUCTORS QE Series U ltra m in iatu riz e d w ith lo w height design. E x c e p tio n a lly h ig h "Q " and w id e freq u e n cy range. Freq u e n cy range o f Q E L Series I to 3l\t kH z: Q E V i, 3 to 50U kH z. A ccuracy, ^ 2 ' . M o ld e d in e p o w resin w ith

05102GOF

Abstract: 05104GOF 05106GOF 05108GOF COM05
Contextual Info: Silicon Controlled Rectifier Series 05' Dim. In c h e s Minimum Cathode A B C D E F G H J K M N P R S Gate Anode Note 1: 1 / 4 -2 8 U N F-3A Note 2: Full thread within 2 1/2 threads Microsemi Catalog Number M axim um Minimum M axim um N ote s 1 .677 -1.200

TZ 1167

Abstract: bu208D U/25/20/TN26/15/850/TZ 1167
Contextual Info: MOTOROL A SC XSTRS/R 15E F D I b3b75SM □0ÜM7Tfl 3 | T -3 3 ^ MOTOROLA SEMICONDUCTOR TECHNICAL DATA 5 AM PERES NPN SILICON HORIZONTAL DEFLECTION TRANSISTOR WITH INTEGRATED DAM PER DIO DE NPN SILICON POWER TRANSISTORS . . . specifically designed fo r use in large scree n color d eflection

Contextual Info: I CM O S STATIC RAMS 6 4 K 1 6 K X 4-BIT ID T71981S /L ID T71982S /L S eparate Data Inputs and Outputs FEATURES: DESCRIPTION: • S eparate d a ta inp u ts a n d o u tp u ts • IDT71981S/L: o u tp u ts tra ck inp u ts d u rin g w rite m ode • IDT71982S/L: h ig h im p e d a n c e o utp u ts d u rin g w rite m ode

Contextual Info: Ultra Fast Recovery Rectifiers ES1J r - ES1K CATHODE BAR Dim. Inches M illim e te r I ] Minimum i j Maximum Minimum Maximum Notes I I- H - - I j I ' J e _t ? .078 .068 A B C D E F G H J Î -.030 .065 .194 .157 .100 .115 .087

UFT120

Abstract: UFT12010 UFT12015 UFT12020 UFT121 UFT12130 UFT12140 UFT12150 UFT12260 UFT12270
Contextual Info: rOhrKh ô o o 1 2 3 Common Cathode rKhrOH ô ô ô 1 2 3 A=Common Anode m H 1 2 !• ■ ■ I H > h r> h Ib m i ■ ■ i| Microsemi Catalog Number 1 ♦ J 2 3 D=Doubler Notes: Baseplate: Nickel plated copper Pins: Nickel plated copper Working Peak Reverse Voltage

D0214AC

Abstract: 569H
Contextual Info: Cathode Band Dim. Inches Minimum A B C D E F G H J n M illim eter Maximum Minimum .078 .067 .002 .115 .089 .008 0.02 .055 .096 .224 .180 .112 - .035 .065 .205 .160 .100 Maximum Notes 1.98 1.70 0.05 2.95 2.25 0.20 0.51 1.40 2.45 5.69 4.57 2.84 - 0.89

D0-214AA

Abstract: SK310B SK32B SK33B SK34B SK36B SK38B D0214AA
Contextual Info: 3 Amp Schottky Rectifiers SK32B - SK310B CATHODE BAR Dim. Inches 1 Minimum A C T| A B C D E F 1- B - 1 — O h M illim eter Maximum Minimum .068 .157 .130 .194 .078 .030 .087 .177 .155 .228 .115 .060 Maximum Notes 1.73 3.99 3.30 4.93

APT806R5KN

Contextual Info: A d v a n ced po w er Te c h n o l o g y APT806R5KN 800V 2.0A 6.50Q POWER MOS IV® N -C H AN N EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS S ym b o l VDSS All Ratings: Tc = 25°C unless otherwise specified. P aram eter Drain-Source Voltage

UF330

Abstract: D0201AD UF340 UF350
Contextual Info: Ultra Fast Recovery Rectifiers UF330 : UF350 X Dim . Inches Minimum A B C D .188 1.00 .285 .046 M illim e te r M axim um Minimum .260 - .375 .056 4.78 25.4 7.24 1.17 M axim um Notes 6.50 Dia. 9.52 1.42 Dia. - PLASTIC D0201AD -II-: Microsemi Catalog Number

8TQ080

Abstract: MBR1080 MBR1090 MBR780 MS1008 MS1009
Contextual Info: 10 Amp Schottky Barrier Rectifiers S1008, MS1009 —C Dim. Inches Minimum —B A B C D E F G H J K L M N P Base Cathode M illim eter Maximum Minimum .390 .045 .180 .245 .550 .139 .100 -.500 .190 .014 .080 .028 .045 .415 .055 .190 .260 .650 .155 .120

STPS20

Abstract: 19TQ015 20L15T MS2015 STPS20L15D
Contextual Info: 20 Amp Schottky OR’ing Rectifier MS2015 —C Dim. Inches Minimum —B A B C D E F G H J K L M N P Base Cathode M illim eter Maximum Minimum .390 .045 .180 .245 .550 .139 .100 .415 .055 .190 .260 .650 .155 .120 .250 .580 .210 .025 .115 .038 .055 -.500

OCM104

Abstract: OCM105 OCM114 OCM115 OCM125 OCM144
Contextual Info: OKI electronic components OCM 1 X4 , 1 X5 SERIES Unidirectional Optical MOS Relay GENERAL DESCRIPTION The OCM1X4 and OCM1X5 Series are unidirectional DC optical MOS relays that provide high­ speed response and are capable of handling high-frequency signals. The input portion is a GaAs

UFR10130

Abstract: UFR10140 UFR10150
Contextual Info: Ultra Fast Recovery Rectifiers UFR10130 - UFR10150 Dim Inches Millimeter Minimum Maximum Minimum Maximum Notes Notes: 1. Full threads within 2 1 /2 threads - 'S 1 F I 2. Standard Polarity: Stud is Cathode Reverse Polarity: Stud is Anode A B C D E F G H J K

Contextual Info: Ultra Fast Recovery Rectifiers UFR8510 - UFR8520 Dim Inches M illim eter Minimum Maximum Minimum Maximum Notes Notes: 1. Full threads within 2 1 /2 threads 2. Standard Polarity: Stud is Cathode Reverse Polarity: Stud is Anode A B C D E F G H J K M N P .667

UF1640

Abstract: UF1630 UF1650
Contextual Info: Ultra Fast Recovery Rectifiers UF1630 —C UF1650 Dim. Inches Minimum —B A B C D E F G H J K L M N P Base Cathode J. dt .3 90 .045 .180 .245 .550 .139 .100 -.500 .190 .014 .0 80 .028 .0 45 M illim eter Maximum Minimum .415 .0 55 .190 .2 60 .650 .155