TIC 1.0M Search Results

2613-15F

Abstract: 2613-15N 2613-20F 2613-20N 2613-25F 2613-25N 2613-45F 2613-45N
Contextual Info: DESCRIPTION FEATURES T he S ig n e tic s 2 6 1 3 is a h ig h s p e e d , 4 0 9 6 b it s ta tic ra n d o m a c c e s s m em ory. U tiliz in g th e S ig n e tic s n -ch a n n e l, s i-g a te M in i-M O S te c h ­ n o lo g y to a c h ie v e h ig h p e rfo rm a n c e a nd

Contextual Info: gjJÎ'N 256K X 32 BiCMOS/CMOS STATIC RAM MODULE | | dt IDT7MP4045 Integrated Dev ce Technology, Inc. FEATURES: DESCRIPTION: • H igh d e n s ity 1 m e g a b y te s ta tic R A M m o dule T h e ID T 7 M P 4 0 4 5 is a 2 5 6 K x 3 2 s ta tic R A M m o dule

Opto-isolator

Contextual Info: Optoisolator Specifications H74A1 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor TTL Interface T h e H 74A 1 p ro v id e s log ic-to -lo g ic o p tic a l in te rf a c in g o f T T L ga te s w ith g uaranteed lev el c o m p a tib ility in p ra c tic al specified circuits. T h e

K321

Abstract: MS621008-20EC MS621008-20KC MS621008-25EC MS621008-35EC
Contextual Info: MOSEL MS621008 P R E L IM IN A R Y 128K x 8 CMOS Static RAM FEATURES DESCRIPTION F a st A c c e s s T im e s : *2 0 /2 5 /3 5 ns T h e M S 6 2 1 0 0 8 is a high s p e e d 1 M -b it s ta tic R AM o rg a n iz e d a s 12 8 K x 8. F u lly s ta tic in o p e ra tio n , th e C hip

TD5A

Abstract: YH 504
Contextual Info: S c h e m a tic : .J Isolation Voltage: 1500 Vrms INPUT to OUTPUT UTP SIDE OCL: 350uH Min @100KHz 100mV 8mADC Rise Time (1 0 — 90%): 2.5ns Typical Insertion Loss (300KHz— 1.0MHz): — 1.0dB Maximum (1 .0MHz— 15.0MHz): -0 .3 d B Maximum (1 5.0MHz— 60.0MHz): -0 .6 d B Maximum

mar 601

Abstract: MAR 801 TD 5 A
Contextual Info: S c h e m a tic : .J Isolation Voltage: 1500 Vrms INPUT to OUTPUT UTP SIDE OCL: 350uH Min @1OOKHz 100mV 8mADC Rise Time (10— 90%): 2.5ns Typical Insertion Loss (1 OOKHz— 999KHz): — 1.0dB Maximum (1.0M H z-15.0MHz): -0 .3 d B Maximum (15.1MHz— 60.0MHz): -0 .6 d B Maximum

Contextual Info: MOSEL VITELIC ADVANCED INFORMATION V62C51161024 64K x 16 STA TIC RAM Features Description • High-speed: 25, 35, 45, 70 ns ■ Ultra low DC operating current of 4mA max. - TTL Standby: 3 mA (Max.) - CMOS Standby: 20 |iA (Max.) ■ Fully static operation

4264 ram

Contextual Info: PRELIMINARY IDT7MPV4135 IDT7MPV4120 512K x 3 2 ,1M x 32 3.3V CMOS STATIC RAM MODULE Integrated D evice Technology, Tic. FEATURES DESCRIPTION • High-density 2MB and 4MB Static RAM modules • Low profile 72-lead, gold plated SIMM Single In-line Memory Module

SML-LXT0402USBC-TR

Abstract: 92b01
Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. SML-LXT0402USBC-TR CAUTION: STATIC SENSITIVE DEVICE FOLLOW PROPER E.5 .D . HANDLING PROCEDURES WHEN WORKING WITH THIS PART. ELEC TRO -O P TIC AL CHARACTERISTICS T A = 2 5 T PARAMETER MIN TYP PEAK WAVELENGTH 470 FORWARD VOLTAGE

MMBC1623L5

Abstract: 519 SOT23 TRANSISTOR pc 135 MMBC1623L3 519 SOT23 MARKING
Contextual Info: SAMSUNG SEMICONDUCTOR INC MMBC1623L5 IME D 17^4142 000754*1 7 | NPN EPITAXIAL SILICON TRANSISTOR T-A 9- <? AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta=25°C C h a ra c te ris tic Collector-Base Voltage Collector-Emitter Voltage .Emitter-Base Voltage

16RL470ME11

Abstract: 16RL330MD11 60x3 2RL1000 10RL150MC8
Contextual Info: Represented and Distributed by ICD Sales Corp. - www.icd-sales.com | RL series • Larger capacitance or Lower ESR than RS series ■ Super low ESR at a high frequency ■ High ripple current Specifications C h a ra c te ris tic s Temperature range Rated voltage range

Contextual Info: ^ c te l -m Package Characteristics and Mechanical Drawings P a c k a g e T h e rm a l C h a ra c te ris tic s Package Type Plastic Leaded Chip Carrier PLCC Plastic Quad Flatpack (PQFP) Plastic Quad Flatpack (PQFP)

Contextual Info: SAMSUNG ELECTRONICS INC MMBT3906 m 7 T h m M 2 ODQ^OMl 4 E3SM6K MEE D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta= 25 °C C h a ra cte ris tic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

RU2B

Contextual Info: RU2YX-RU2C High Efficiency Rectifiers VOLTAGE RANGE: 100- 1000 V CURRENT: 1.5 - 0.8 A DO - 15L Features Low cos t Diffus ed junction Low leakage Low forward voltage drop Eas ily cleaned with freon, alcohol, ls opropand The plas tic m aterial carries U/L recognition 94V-0

80c451

Abstract: Edd 44 809X AD11 53AD7 CM712 16-bit pata controller P4161 S31A9
Contextual Info: S ig n e tic s SC96AH Series Single-Chip 16-Bit Microcontrollers Prelim inary Specification Microprocessor Products DESCRIPTION The SC96AH Series microcontrollers consist of a powerful 16-bit CPU tightly coupled with 8K bytes of program mem­ ory, 232 bytes of data memory and I/O

Contextual Info: ERA34-10 Fast Recovery Rectifier VOLTAGE RANGE: 1000 V CURRENT: 0.1 A DO - 41 Features Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with Freon,Alcohol,Isopropanol and similar s olvents The plas tic m aterial carries U/L recognition 94V-0

Contextual Info: KM23C32005G CMOS MASK ROM 32M-Bit 4M x 8 /2 M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304 x 8 (byte mode) The KM23C32005G is a fu lly s ta tic m ask program ­ mable ROM fabricated using s ilicon gate CMOS process

UF5408 BL

Abstract: UF5400 UF5408
Contextual Info: BL GALAXY ELECTRICAL ULTRA FAST RECTIFIER UF5400 - - - UF5408 VOLTAGE RANGE: 50 - 1000 V CURRENT: 3.0 A FEATURES DO - 27 Low cos t Low leakage Low forward voltage drop High current capability Easily cleaned with alcohol,Isopropanol and similar solvents The plas tic material carries U/L recognition 94V-0

APT40GF100BN

Abstract: TO 48 THYRISTOR FAST SWITCHING TRANSISTOR 400 VOLTS
Contextual Info: A D VA NC ED POUER TECHNOLOGY b lE D • D E S TIC I □ OOOfl'iG b3T *A V P A dvanced po w er TECHNOLOGY APT40GF100BN 1000V 40A N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR All Ratings: Tc = 25°C unless otherwise specified.

d449c

Abstract: PD449 pd4493 449C
Contextual Info: mPD449 2 ,0 48 X 8-BIT STATIC CMOS RAM NEC NEC Electronics Inc. Revision 4 Description Pin Configuration The ^PD449 is a high-speed, tow-power, 2048-word by 8b it s ta tic CMOS RAM fabricated w ith advanced silicongate CMOS technology. A unique c ircu itry technique

SMD M0

Contextual Info: 2432 S e r i e s □upnn FFC/FPC Connector 1.0mm 0.039” Non ZIF M aterial: Housing: High te m p e ra tu re housing U L 9 4 V -0 w ith sta n ds IR and VPR soldering m ethods. Contacts: P hosphor Bronze. Leg: Brass. Plating: Tin plated. E lectrical C h a ra c te r is tic s:

Contextual Info: KBJ8A-KBJ8M Silicon Bridge Rectifiers VOLTAGE RANGE: 50 - 1000 V CURRENT: 8.0 A KBJ Features 4.7± 0.25 Rating to 1000V PRV 30± 0.3 3.7± 0.2 φ3 . Reliable low cos t cons truction utilizing m olded plas tic technique res ults in inexpens ive product 5.5± 0.2

Contextual Info: MOSEL VITELIC PRELIMINARY INFORMATION V62C31161024 64K x 16 STA TIC RAM Features Description • High-speed: 35, 70 ns ■ Ultra low DC operating current of 4mA max. - TTL Standby: 0.5 mA (Max.) - CMOS Standby: 10 [xA (Max.) ■ Fully static operation ■ All inputs and outputs directly TTL compatible

Contextual Info: KBJ6AA-KBJ6MA Silicon Bridge Rectifiers VOLTAGE RANGE: 50 - 1000 V CURRENT: 6.0 A KBJ4 Features 4.7± 0.2 Rating to 1000V PRV 25± 0.3 φ 3.2± 0.15 Reliable low cos t cons truction utilizing m olded plas tic technique res ults in inexpens ive product 9.5± 0.2