THYRISTOR YS 150 105 Search Results

Thyristor ys 150 105

Abstract: M5 DIODE Thyristor ys 150
Contextual Info: 5 ; » • 9f T ‘ ?k SCR Inverters International I%2R Rectifier Thyristor/Diode, Fast Doubler Circuii Positive Control INT-A-Pak 1RKH FI02-12 1200 105 105 90 2400 :5oo 20 and 25 0.085 2 14 I 7 87097 IRKH F102-06 600 105 105 90 2400 2500 20 and 25 0 085

Contextual Info: PIXYS Phase Control Thyristor CS 630 ITRM Ss =1400A I' = 630 A VRRM = 1200-1600 V tavm Type 3 4 1200 1400 1600 1200 1400 1600 Symbol CS 630-12io1 CS 630-14io1 CS 630-16io1 Maximum Ratings Test Conditions 1400 630 A A 10 ms 50 Hz , sine 8.3 ms (60 Hz), sine

Contextual Info: •Avalanche Diodes T a = 2 5 'C Absolute M axim um Ratings Vnt IZSM Type No. H ‘ IV ) instantaneous 40 IR IH1H 1 F lft is iA ( >* A) t^ A ) No. 130 RY 23 ^00 RY 24 400 " Instantaneous max max 1 Ps 5 60 to 70 135 to 180 4u to+ i 50 (V) 227 300 10 50

ac08m

Contextual Info: MOTOROLA Order this document by MAC08MT1/D SEMICONDUCTOR TECHNICAL DATA MAC08MT1 S O T -223 Triac Motorola preferred device Silicon Bidirectional Thyristors Designed for use in solid state relays, MPU interface, TTL logic and other light industrial or consumer applications. Supplied in surface mount package for use in

triode rn 1016

Abstract: 2N1778A thyristor st 103
Contextual Info: Discrete Semiconductors C10 Series: 2N1770A-2N2619A Semitronics Phase Control SCR 4.7 Amps 125-600 Volts Description Silicon Controlled Rectifiers SCR are reverse blocking triode thyristor semiconductor devices designed for power switching and phase control

R0633YS

Abstract: r0633ys12d R0633 j750a r0633ys10x12x Thyristor 12kV 10 kA
Contextual Info: WESTCODE Date:- 25 Jun, 2001 Data Sheet Issue:- 2 Distributed Gate Thyristor Types R0633YS10x to R0633YS12x Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS 1000-1200 V VDRM Repetitive peak off-state voltage, note 1 VDSM Non-repetitive peak off-state voltage, (note 1)

v105

Abstract: 16S90 tsr 002
Contextual Info: Bulletin 127136 rev. B 09/97 International Rectifier I S R i THYRISTOR/THYRISTOR r k u / Features Electrically Isolated: DBC base plate • ■ ■ ■ 350 0 V RMS Isolating voltage Standard JED E C package Simplified mechanical designs, rapid assembly Auxiliary cathode terminals or wiring convenience

Contextual Info: T ra n s ie n t V o lta ge S u p p re s s io n TV S D io d e s + 1N5629 + Series 1N5865A C 3 Y 3 0 M Control overpower ri k 1T 31.8 min. ¡1{5 .33 max. -» 7.5 9.0 25.4 min. l _I Smisibla PnxtèectSon MAXIMUM RATINGS When no problems exist, Oydom TVS • Peak pulse power (Ppk): 1500 watts

2082f3

Abstract: Thyristor ys 150 105 Thyristor ys 130
Contextual Info: TISP2072F3, TISP2082F3 DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS 3JSE03 • MARCH IW4 •REVISED SETOMBER 1994 TELECOMMUNICATION SYSTEM SECONDARY PROTECTION Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge DEVICE

skpt* 38

Abstract: 3082f3
Contextual Info: TISP3072F3, TISP3082F3 DUAL. SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS SUSEOg - MARCH 1994 •REVISED SKPTCMBER 199* TELECOMMUNICATION SYSTEM SECONDARY PROTECTION • Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge

3320F

Abstract: LTSP
Contextual Info: TISP3240F3, TISP3260F3, TISP3290F3, TISP3320F3, TISP3380F3 DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS _ SIWtlQ • MARCH I9»l REVISED SEPTEMBER |WJ TELECOMMUNICATION SYSTEM SECONDARY PROTECTION • Ion-Implanted Breakdown Region

function Wave Generator sawtooth

Abstract: skpt* 38
Contextual Info: TISP1072F3, TISP1082F3 DUAL ASYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS HU-SHH - SKPTgMSHi m i - REVISED SEPTEMBER 1W4 TELECOMMUNICATION SYSTEM SECONDARY PROTECTION Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge

HSP1072F3

Abstract: dual Symmetrical Transient Voltage Suppressors
Contextual Info: HSP1072F3, HSP1Q82F3 DUAL ASYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS C o p y rtjftt0 1997. Powgr Innovation» Limited. UK SEPTEMBER 1993 - REVISED SEPTEMBER 1987 TELECOMMUNICATION SYSTEM SECONDARY PROTECTION • ton-4mptonted Breakdown Region D PACKAQE TOP View

T1SP4180f3

Abstract: T1SP4180 4150F3
Contextual Info: TISP4125F3, TI8P4150F3, TISP4180F3 SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS _ SLPSE13 - MARCH 1994 - REVISED SEPTEMBER I W TELECOMMUNICATION SYSTEM SECONDARY PROTECTION • Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge

IPM module lg

Abstract: diode gi 9300 irf 5110 ScansUX7 D183 D184 D185 HALF WAVE 45 E 57 20-C1V D187 D188
Contextual Info: International m§Rectifier s e r ie s irk.L 56 , .L7i, .l9i FAST RECOVERY DIODES ADD-A-pak Power Modules 55A 70A 90A Features • F a s t re c o v e ry tim e c h a ra c te ris tic s ■ E le c tric a lly iso lated b a s e p la te ■ S ta n d a rd J E D E C p a c k a g e

thyristor YS 160 004

Abstract: HIGH VOLTAGE THYRISTOR D183 D184 D185 D186 D187 D188 irf 940 lem current lt 100
Contextual Info: International m§Rectifier s e r ie s irk.L 56 , .L7i, .l9i FAST RECOVERY DIODES ADD-A-pak Power Modules 55A 70A 90A Features • F a s t re c o v e ry tim e c h a ra c te ris tic s ■ E le c tric a lly iso lated b a s e p la te ■ S ta n d a rd J E D E C p a c k a g e

Contextual Info: T1SP2240F3, TISP2260F3, T1SP2290F3, TISP2320F3, TISP23S0F3 DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS C opyn ÿil 0 1997, Power Innovatori» Limited, UK_ M ARC H 1994 - R E V IS E D SE P T E M B E R 1897 TELECO M M U N IC ATIO N SY ST E M SEC O N O A R Y PRO TEC TIO N

electromatic s system sv 115 230

Abstract: mgdm 6 A ELECTROMATIC mgdm 6 A ELECTROMATIC MGDM 6a electromatic s system st 125 115 electromatic s system sv 110 electromatic RELAY SM 115 220 electromatic denmark electromatic s system electromatic s system sm 105 220
Contextual Info: SENSORS INDUCTIVE - CAPACITIVE - LEVEL - PHOTO - TEMPERATURE ETC. Inductive iösclncrmolk Proximity sensors Capacitive This new catalogue on accessories together with a new Ssystem catalogue replace our eight previous S-system catalo­ gues. This innovation should facilitate your survey of our entire

Contextual Info: TISP224QF3, TISP2260F3, TISP2290F3, TISP2320F3, TK DUAL SYMMETRICAL TR VOLTAGE SUPPR MARCH 1994 - REVISED SSI TELECOMMUNICATION SYSTEM SECONDARY PROTECTION • Ion-Implanted Breakdown Region Precise and Stable Voltage

APY12

Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP

ZNR14K201U

Abstract: znr14k201 ZNR14K star delta auto trans wiring diagram ERZ-C14DK201V thyristor 6-pulse full wave firing circuit znr14 ERZC14DK201 TB118 AC drives regenerative braking circuits diagram
Contextual Info: ALLEN-BRADLEY Instruction Manual Bulletin 1370 DC Drive Module Series B Price: S25.00 Because of the variety o f uses for this equipm ent ana because o f the differen ces b etw een this solid state equipm ent and electrom echanical equipm ent, th e user of

ATS 2501

Abstract: zener diode reference guide sanken UX-F5B MICROWAVE OVEN HIGH VOLTAGE RECTIFIER DIODE - HVR FML-32S-T B 2306 BARRIER RECTIFIER fmgg2c diode RBV-406M FMUG2F RU3C
Contextual Info: Bulletin No. D01EE0 Sep., 2002 SILICON DIODES SILICON VARISTORS CAUTION / WARNING The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Sanken reserves the right to make changes without further notice to any products herein in

FMPG2F

Abstract: zener diode reference guide diode MARKING 30J MICROWAVE OVEN HIGH VOLTAGE RECTIFIER DIODE - HVR diode hvr 1x FMB-34M sot23 3F mark fmlg12 RBV SOT23 marking code RBV SOT23
Contextual Info: Bulletin No. D01ED0 Oct., 2000 SI LICON DIODES SILICON VARISTORS CAUTION / WARNING The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Sanken reserves the right to make changes without further notice to any products herein in

HVR-1X 7 diode

Abstract: hvr 1X 3 diode HVR-1X 7 FMPG2F HVR-1X diode HVR-1X 6 diode HVR-1X -7 HVR-1X 6 fmp2fu RBA-404B
Contextual Info: CAUTION / WARNING The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Sanken reserves the right to make changes without further notice to any products herein in