THYRISTOR T 460 Search Results
THYRISTOR T 460 Datasheets Context Search
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Contextual Info: A S E A BROUN/ABB SEMICON A3 Netz-Thyristor-Diode-M odule d " | □ □ 4 0 3 0 Û O O O D l l ] ^ t~ r-Z 5 -Z 3 Phase control Thyristor-Diode-M odules Daten pro Diode oder Thyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor |
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A 3120
Abstract: A113
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DIN 2510
Abstract: A108 2510 n
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LT 0216 diode
Abstract: 20/LT 0216 diode diode bridge LT 405
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255-12io1 255-14io1 255-16io1 255-18io1 4bflb22h GD03230 LT 0216 diode 20/LT 0216 diode diode bridge LT 405 | |
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Contextual Info: Technische Information / Technical Information Netz Thyristor Phase Control Thyristor T 1851N 60.70TOH N . Features: Volle Sperrfähigkeit bei 125° mit 50 Hz Full blocking capability at 125°C with 50 Hz Hohe Stoßströme und niedriger Wärmewidererstände durch NTV-Verbindung |
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1851N 70TOH | |
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Contextual Info: Technische Information / Technical Information Netz Thyristor Phase Control Thyristor T 1851N 60.70TOH N . Features: Volle Sperrfähigkeit bei 125° mit 50 Hz Full blocking capability at 125°C with 50 Hz Hohe Stoßströme und niedriger Wärmewidererstände durch NTV-Verbindung |
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1851N 70TOH | |
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Contextual Info: Technische Information / Technical Information Netz Thyristor Phase Control Thyristor T 1081N 60.70TOH N . Features: Volle Sperrfähigkeit bei 125° mit 50 Hz Full blocking capability at 125°C with 50 Hz Hohe Stoßströme und niedriger Wärmewidererstände durch NTV-Verbindung |
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1081N 70TOH | |
t 1451 n 52 tohContextual Info: Technische Information / Technical Information Netz Thyristor Phase Control Thyristor T 1451 N 48.52 TOH N Features: Volle Sperrfähigkeit bei 125° mit 50 Hz Full blocking capability at 125°C with 50 Hz Hohe Stoßströme und niedriger Wärmewiderstände durch NTV-Verbindung |
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1601N
Abstract: sm 17 35 tc
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1601N sm 17 35 tc | |
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Contextual Info: Technische Information / Technical Information Netz Thyristor Phase Control Thyristor T 1551 N 48.52 TOH N Features: Volle Sperrfähigkeit bei 125° mit 50 Hz Full blocking capability at 125°C with 50 Hz Hohe Stoßströme und niedriger Wärmewiderstände durch NTV-Verbindung |
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T1258N
Abstract: T348N T398N T828N T1078N
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T398N T828N T1258N T1078N T1258N T348N T398N T828N T1078N | |
T1078N
Abstract: T1258N T348N T398N T828N
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T348N T398N T828N T1078N T1258N T1078N T1258N T348N T398N T828N | |
Diode LT 023Contextual Info: Thyristor Modules Thyristor/Diode Modules MCC 95 iTRMS = 2 x 180 A MCD 95 iTAVM =2x116A V = 800-1800 V RRM T 0 -2 4 0 AA v RSM V V DSM V DRM V V Version 1 B 900 1300 1500 1700 1900 800 1200 1400 1600 1800 MCC MCC MCC MCC MCC T y P e rrm 95-08io1 95-12io1 95-14io1 |
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2x116A 95-08io1 95-12io1 95-14io1 95-16io1 95-18io1 95-08io8 95-12io8 95-16io8 95-18io8 Diode LT 023 | |
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Contextual Info: D &3 A S E A BROWN/ABB SENICON 1 □ □4Û3GÛ 3 I 7/- i s- z ? Phase control Thyristor-Modules Netz-Thyristor-Module Daten pro D io d e o d e r T h y ristor/ data p e r d io d e o r th y risto r/ les c a ra cté ristiq u e s s e ra p porte n t à 1 d io d e ou à 1 th yristor |
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EGR03
Abstract: EGR03-25 T810 X103
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EGR03 50HziEÂ aftl80* t95t/R89 Shl50 EGR03-25 T810 X103 | |
DCR1596SW51Contextual Info: M ITEL DCR1596SW PHase Control Thyristor S E M IC O N D U C T O R DS4249 - 3.3 Supersedes Novem ber 1997 version, DS4249 -3.2 KEY PARAMETERS 5200V DRM 2260A Jt AV 46000A TSM dVdt* 1000V/|iS d l/d t 300A/(iS APPLICATIONS • High Pow er Drives. ■ High V oltage Pow er Supplies. |
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DS4249 DCR1596SW 6000A DCR1596SW52 DCR1596SW51 DCR1596SW50 DCR1596SW49 DCR1596SW48 DCR1596SW47 | |
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Contextual Info: DIXYS MC0 500 ITRMS High Power Thyristor Modules ^T AV M vRRM VRSM V RRM v DSM v DRM V V 1300 1500 1700 1900 1200 1400 1600 1800 MCO MCO MCO MCO Test Conditions ^TRMS T VJ ^T(AV)M Tc = 85°C; 180°!sine t = t = A A 10 ms (50 Hz) 8.3 ms (60 Hz) 15000 16000 |
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500-12io1 500-14io1 500-16io1 500-18io1 813000gate Mbflb25t. | |
DCR1279Contextual Info: @ M ITEL DCR1279SD Phase Control Thyristor SEMICONDUCTOR Supersedes Septem ber 1997 version, DS4643 - 3.1 DS4643 - 3.2 APPLICATIONS • High Power Drives. ■ High Voltage Power Supplies. ■ DC Motor Control. March 1998 KEY PARAMETERS VDRM 4800V 't ,a v , |
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DS4643 DCR1279SD 5000A DCR1279SD48 DCR1279SD47 DCR1279SD46 DCR1279SD45 DCR1279SD44 150mA, DCR1279 | |
GR-974-COREContextual Info: 7EL2 BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTOR 7EL2 Primary Protector Ion-Implanted Breakdown Region - Precise and Stable Voltage - Low Voltage Overshoot under Surge Device 7EL2 Cell Package Side View T( A) V(BR) V(BO) V(BO) Minimum Minimum Maximum V |
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GR-974-CORE 03/04/TSP0341 GR-974-CORE | |
800T-JContextual Info: 5STP 30T1800 5STP 30T1800 Old part no. T 989C-3030-18 Phase Control Thyristor Properties § High operational capability § Possibility of serial and parallel connection Applications § Controlled rectifiers § AC drives Key Parameters V DRM, V RRM = 1 800 |
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30T1800 989C-3030-18 30T1800 30T1600 1768/138a, T/113tate T/113/04 Jul-10 800T-J | |
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Contextual Info: 5STP 30H1801 5STP 30H1801 Old part no. T 989-3030-18 Phase Control Thyristor Properties High operational capability Possibility of serial and parallel connection Applications Controlled rectifiers AC drives Key Parameters V DRM , V RRM = 1 800 I TAVm = 3 108 |
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30H1801 1768/138a, T/086/03a Jul-11 30HOn-state | |
5STP30T1800
Abstract: 3864a
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30T1800 989C-3030-18 1768/138a, T/113/04a Jul-11 30T1000 5STP30T1800 3864a | |
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Contextual Info: □ IXYS MC0450 High Power Single Thyristor Module Symbol Test C onditions Itrms Itav T vj - TVjm Tc = 85°C; 180° sine Itsm TVj — 45°C v R= o l*t di/dt cr 750 A Itav = 464 A VRRM = 2000-2200 V Itr m s Maximum Ratings 750 464 A A t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) |
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1C150 | |
EGP04-25
Abstract: EGP04 T151 T930 pt151 I-G05
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EGP04 EGP04-25 50HzjE& fcifiijfcftl80e 50HzIE& iTO15Â eaTS30 11S1W ffi36-f^ I95t/R89> EGP04-25 T151 T930 pt151 I-G05 | |