THYRISTOR T 378 N Search Results

thyristor t 250 n 1200

Contextual Info: Technische Information / Technical Information Netz-Thyristor Phase Control Thyristor T 378 N 12.16 N Elektrische Eigenschften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung

Contextual Info: Technische Information / Technical Information Netz-Thyristor Phase Control Thyristor T 378 N 12.16 N Elektrische Eigenschften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung

CLA100PD1200NA

Contextual Info: CLA 100 PD 1200 NA advanced V RRM = I T AV M = I T(RMS) = High Efficiency Thyristor Phase leg Part number 4 3 1 1200 V 100 A 157 A 2 Backside: isolated Applications: Features / Advantages: Thyristor for line frequency Planar passivated chip Long-term stability

kb 778

Abstract: T1929N T380N T869N
Contextual Info: W1C - Schaltung ~ Anschlußspannung 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 3600 V ~ Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id [°C] [A] Verlustl. P d Luftmen. v L Schaltung pro KB [W] Diode D Thyristor

thyristor 406

Abstract: diode T 3512 T1929N T380N T869N
Contextual Info: M2C - Schaltung ~ M2K ~ Anschlußspannung 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 440 V 3600 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id [°C] [A] Verlustl. P d Luftmen. v L Schaltung pro KB [W]

12f 575

Abstract: D1049N D428N D660N D798N thyristor 1012 446 DIODE
Contextual Info: M1 - Schaltung ~ Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 400 Veff 500 Veff 550 Veff 180 V 1400 V 220 V 1600 V 240 V 1800 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id [°C] [A] Verlustl. P d Luftmen. v L

ms1j

Abstract: ic sc 4145
Contextual Info: TISP4070M3LP THRU TISP4095M3LP, TISP4125M3LP THRU TISP4180M3LP, TISP4265M3LP THRU TISP440QM3LP BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS _ NOVEMBER 1997 - REVISED DECEMBER 1997 TELECOMMUNICATION SYSTEM MEDIUM CURRENT SECONDARY PROTECTION Ion-Implanted Breakdown Region

Contextual Info: TISP4070H3LP THRU TISP4095H3LP, TISP4125H3LP THRU TISP4180H3LP, TISP4265H3LP THRU TISP4400H3LP BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS NOVEMBER 1997 - REVISED DECEMBER 1997 TELECOMMUNICATION SYSTEM HIGH CURRENT SECONDARY PROTECTION Ion-Implanted Breakdown Region

T1078N

Abstract: T1258N T348N T398N T828N
Contextual Info: W1C - Schaltung ~ Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 60 Veff 125 Veff 180 Veff 200 V 400 V 600 V ~ Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id [°C] [A] Verlustl. P d Luftmen. v L Schaltung

417-865

Abstract: D1049N D428N D660N D798N 16-04 thyristor
Contextual Info: ~ ~ ~ B6 - Schaltung Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 400 Veff 500 Veff 550 Veff 540 V 1400 V 670 V 1600 V 740 V 1800 V Kühlblöcke für Luftselbstkühlung - Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L

12f 575

Abstract: T718N THYRISTOR t508n T1189N T1509N T1989N T298N T358N T508N T588N
Contextual Info: M3C - Schaltung ~ Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 400 Veff 500 Veff 270 V 1400 V 335 V 1600 V ~ ~ + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung

T1189N

Abstract: T1509N T1989N T298N T358N T588N T718N T719N diode 528 6 2
Contextual Info: B6C - Schaltung ~~~ Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 400 Veff 500 Veff 540 V 1400 V 670 V 1600 V Temp. tA Satzstrom Id [°C] [A] [W] 35 175 260 385 439 585 623 759 890 937 1095 164 246 365 419 557

T1059N

Abstract: T1589N T308N T458N T459N T709N
Contextual Info: B6C - Schaltung ~~~ Anschlußspannung 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 930 V 2200 V Temp. tA Satzstrom Id [°C] [A] 35 40 45 50 55 60 141 203 247 310 362 470 562 662 754 910 132 191 235 294 345 448 534 629

T1059N

Abstract: T1589N T308N T458N T459N T709N
Contextual Info: B6C - Schaltung ~~~ Anschlußspannung 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 930 V 2200 V Temp. tA Satzstrom Id [°C] [A] 35 40 45 50 55 60 141 203 247 310 362 470 562 662 754 910 132 191 235 294 345 448 534 629

MOC306X

Abstract: OPTOCOUPLER trigger thyristor scr thyristor firing control circuit with optocoupler moc3061 application note MOC316X MOC3162-M mercury wetted relay MOC3062M
Contextual Info: ZERO-CROSS PHOTOTRIAC OPTOCOUPLER MOC3061-M MOC3062-M MOC3063-M MOC3162-M PACKAGE MOC3163-M SCHEMATIC ANODE 1 6 MAIN TERM. 6 6 5 NC* CATHODE 2 1 N/C 3 1 ZERO CROSSING CIRCUIT 4 MAIN TERM. *DO NOT CONNECT TRIAC SUBSTRATE 6 1 DESCRIPTION The MOC306X and MOC316X devices consist of a AlGaAs infrared emitting diode optically coupled to a monolithic silicon detector

nec 5p4m

Abstract: nec5p4m 5p4m thyristor motor speed control circuit 5P6M Thyristor NEC thyristor 5P4M nec 5p6m 5p6m 5P6M NEC 5p5m
Contextual Info: NEC TH YRISTO RS BfCTRON DEVICE 5P4M, 5P5M, 5P6M 5 A 8 Ar.m .s. THYRISTOR The 5P4M to 5P6M are a P gate all diffused mold type T h yristo r granted PACKAGE D IM ENSIONS 5A m p On-state Average Current (Tc=103 °C) in m illim eters 4.8 MAX. 3.6 FEATURES

MOC3063

Abstract: moc3063 application note PW Series MOC3063 801Q E113898 MOC3063M MOC3063S MOC3063S-TA1 ZERO-CROSS OPTOISOLATORS TRIAC DRIVER OUTPUT
Contextual Info: L IT E - O N T E C HN OLOGY C OR P OR A TI ON Property of Lite-on Only FEATURES * Isolation voltage between input and output Viso : 5,000Vrms * 6pin DIP zero-cross optoisolators triac driver output * High repetitive peak off-state voltage VDRM : Min. 600V

MOC3063

Abstract: E113898 moc3063 application note MOC3063M MOC3063S MOC3063S-TA1
Contextual Info: L IT E - O N T E C HN OLOGY C OR P OR A TI ON Property of Lite-on Only FEATURES * Isolation voltage between input and output Viso : 5,000Vrms * 6pin DIP zero-cross optoisolators triac driver output * High repetitive peak off-state voltage VDRM : Min. 600V

MOC3083

Abstract: MOC3083 and applications E113898 MOC3083S-TA1 MOC3083S MOC3083M MOC3083-M
Contextual Info: L IT E - O N T E C HN OLOGY C OR P OR A TI ON Property of Lite-on Only FEATURES * Isolation voltage between input and output Viso : 5,000Vrms * 6pin DIP zero-cross optoisolators triac driver output * High repetitive peak off-state voltage VDRM : Min. 800V

w41 transistor

Abstract: transistor mj 1504
Contextual Info: ADVANCED POWER TECHNOLOGY b3E D • 0257^1 A OGÜllflO 2D1 « A V P d v a n c e d P ow er T e c h n o lo g y 9 APT90GF100JN 1000V 90A SINGLE DIE ISOTOP PACKAGE ISOTOP POWER MOS IV®IGBT ^ \ " U L Recognized" File No. E145592 S N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE

Contextual Info: TISP3070H3SL THRU TISP3115H3SL, TISP3125H3SL THRU TISP3210H3SL TISP3250H3SL THRU TISP3350H3SL DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS Copyright 2000, Power Innovations Limited, UK JANUARY 1999 - REVISED OCTOBER 2000 TELECOMMUNICATION SYSTEM 2x100 A 10/1000 OVERVOLTAGE PROTECTORS

SP3070H3

Abstract: SP3250H3 sp3070h Pi 3115 SP3350H3 SP3080H3 TISP3250H3SL THRU TISP3350H3SL SP-3350 SP3125 SP3135
Contextual Info: TISP3070H3SL THRU TISP3115H3SL, TISP3125H3SL THRU TISP3210H3SL TISP3250H3SL THRU TISP3350H3SL DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS Copyright 2000, Power Innovations Limited, UK JANUARY 1999 - REVISED OCTOBER 2000 TELECOMMUNICATION SYSTEM 2x100 A 10/1000 OVERVOLTAGE PROTECTORS

MOC3063

Abstract: MOC3063M IEC68 MOC3063S MOC3063S-TA1 VDE0110 TB 1275 an
Contextual Info: LITE-ON TECHNOLOGY CORPORATION Property of Lite-on Only FEATURES 1. This specification shall be applied to photocoupler. Model No. MOC3063 as an option. 2. Applicable Models Business dealing name * Dual-in-line package : MOC3063-V : 1-channel type * Wide lead spacing package :

VEB mikroelektronik

Abstract: Mikroelektronik Information Applikation mikroelektronik Heft 12 Radio Fernsehen Elektronik 1977 Heft 9 information applikation information applikation mikroelektronik mikroelektronik DDR Halbleiterbauelemente DDR aktive elektronische bauelemente ddr mikroelektronik Heft
Contextual Info: m B Ik i^ ts je le l-c te n o r iil-c information Applikation m l^ o e le l-c fe n a riil-c Information Applikation H EFT 17 LEISTUNGSELEKTRONIK 4 Die sicheren A rbeitsbereiche Leistungsschalttransistoren VEB MIKROELEKTRONIK „VARLIIE8KNECHT“57AHNSDORP