THYRISTOR 3A 600V Search Results

Contextual Info: MITSUBISHI SEMICONDUCTOR THYRISTOR CR3PM LOW POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE It ( V d r m . 400V/600V

Contextual Info: SEMICONDUCTOR TECHNICAL DATA T3A6CI I'.; -D irectional Triode Thyristor 3A Mold TRIAC FEATURES • • • • Repetitive Peak O ff-state Voltage : V drm=600V. R.M.S O n-S tate Current : I t rms =3A. High Commutation (dv/dt) Isolation Voltage : V isol=1500V AC

Contextual Info: T3A6CI SEMICONDUCTOR Bi-Directional Triode Thyristor 3A Mold TRIAC TECHNICAL DATA FEATURES ᴌRepetitive Peak Off-state Voltage : VDRM=600V. A ᴌR.M.S On-State Current : IT RMS =3A. C DIM A B C D E F P F U ᴌHigh Commutation (dv/dt) E S B ᴌIsolation Voltage : VISOL=1500V AC

TF321S

Abstract: TF341S TF361S
Contextual Info: TO-220F 3A Thyristor TF321S, TF341S, TF361S • Features External Dimensions φ 3.3±0.2 ●Gate trigger current: IGT=15mA max 13.0 min ●Isolation voltage: VISO=1500V 50Hz Sine wave, RMS 3.9±0.2 0.8±0.2 16.9± 0.3 ●Average on-state current: IT(AV)=3A

TF361M

Abstract: TF341M TF321M
Contextual Info: TO-220 3A Thyristor TF321M / TF341M / TF361M • Features External Dimensions Unit: mm 12.0 min ●Gate trigger current: IGT=10mA max 2.1max φ 3.75±0.1 a b ±0.15 1.35 4.0 max ●Average on-state current: IT(AV)=3A 5.0max 10.4max 16.7max 3.0±0.2 8.8±0.2

Contextual Info: TO-220 3A Thyristor TF321M / TF341M / TF361M • Features External Dimensions Unit: mm 12.0 min ●Gate trigger current: IGT=10mA max 2.1max φ 3.75±0.1 a b ±0.15 1.35 4.0 max ●Average on-state current: IT(AV)=3A 5.0max 10.4max 16.7max 0.2 0.2 3.0±

TF321S

Abstract: TF341S TF361S 842 402
Contextual Info: TO-220F 3A Thyristor TF321S, TF341S, TF361S • Features External Dimensions φ 3.3±0.2 ●Gate trigger current: IGT=15mA max 13.0 min ●Isolation voltage: VISO=1500V 50Hz Sine wave, RMS 3.9±0.2 0.8±0.2 16.9± 0.3 ●Average on-state current: IT(AV)=3A

ZO 103 TRIAC

Abstract: Triac 3a 600v
Contextual Info: SEMICONDUCTOR TECHNICAL DA TA T3A6CIA Bi-Directional Triode Thyristor Silicon Planar Type 3A Mold TRIAC FEATURES • • • • Repetitive Peak Off-state Voltage : V drm=600V. R.M.S On-State Current : I t rm s = 3A . High Commutation (dv/dt) Isolation Voltage : V iso l = 1 5 0 0 V AC

Contextual Info: TO-220 3A High sensitive Thyristor TF321M-A, TF341M-A, TF361M-A • Features External Dimensions Unit: mm 12.0 min ●High sensitive Gate trigger Current: IGT=0.1mA max 2.1max φ 3.75±0.1 a b ±0.15 1.35 4.0 max ●Average on-state current: IT(AV)=3A 5.0max

TF321M-A

Abstract: TF341M-A TF361M-A TF361MA
Contextual Info: TO-220 3A High sensitive Thyristor TF321M-A, TF341M-A, TF361M-A • Features External Dimensions Unit: mm 12.0 min ●High sensitive Gate trigger Current: IGT=0.1mA max 2.1max φ 3.75±0.1 a b ± 1.35 0.15 4.0 max ●Average on-state current: IT(AV)=3A 5.0max

Contextual Info: TO-220F 3A Thyristor TF321S, TF341S, TF361S • Features External Dimensions φ 3.3±0.2 ●Gate trigger current: IGT=15mA max 13.0 min ●Isolation voltage: VISO=1500V 50Hz Sine wave, RMS 0.2 0.2 3.9± 0.8± 16.9± 0.3 ●Average on-state current: IT(AV)=3A

Contextual Info: SF3GZ47,SF3JZ47 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF3GZ47, SF3JZ47 MEDIUM POWER CONTROL APPLICATIONS Unit: mm Repetitive Peak Off−State Voltage: VDRM = 400V, 600V Repetitive Peak Reverse Voltage: VRRM = 400V, 600V Average On−State Current: IT AV = 3A

M3JZ47

Abstract: SM3JZ47 m3gz47 13-10H1A SM3GZ47 M3JZ
Contextual Info: SM3GZ47,SM3JZ47 TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM3GZ47,SM3JZ47 AC POWER CONTROL APPLICATIONS Unit: mm Repetitive Peak Off−State Voltage : VDRM = 400, 600V R.M.S ON−State Current : IT RMS = 3A High Commutating (dv / dt)

M3JZ47

Abstract: m3gz47 SM3JZ47 SM3GZ47 TOSHIBA c TOSHIBA THYRISTOR
Contextual Info: SM3GZ47, SM3JZ47 TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM3GZ47, SM3JZ47 AC POWER CONTROL APPLICATIONS Unit: mm Repetitive Peak Off−State Voltage: VDRM = 400V, 600V R.M.S On−State Current: IT RMS = 3A High Commutating (dv / dt)

F3JZ47

Abstract: f3GZ47 SF3JZ47 TOSHIBA Thyristor SF3GZ47
Contextual Info: SF3GZ47,SF3JZ47 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF3GZ47, SF3JZ47 MEDIUM POWER CONTROL APPLICATIONS Unit: mm Repetitive Peak Off−State Voltage: VDRM = 400V, 600V Repetitive Peak Reverse Voltage: VRRM = 400V, 600V Average On−State Current: IT AV = 3A

Contextual Info: Ordering number : EN1873A _ D R D 3 N0.1873A Silicon Diffused Junction Type 3.0A Reverse Blocking Thyristor Fe atu re s •Glass passivation for high reliability ■Peak OFF-state reverse voltage : -100 to -600V * Average ON-state current : 3A

m3j48

Abstract: TOSHIBA TRIODE SM3G48 SM3J48 USM3G48 USM3J48 TOSHIBA THYRISTOR
Contextual Info: SM3G48,USM3G48,SM3J48,USM3J48 TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM3G48,USM3G48,SM3J48,USM3J48 AC POWER CONTROL APPLICATIONS Repetitive Peak Off-State Voltage : VDRM=400, 600V R.M.S On-State Current : IT RMS =3A Gate Trigger Current

M3G45

Abstract: M3J45 SM3J45 SM3G45 m3g4
Contextual Info: SM3G45, SM3J45 TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM3G45, SM3J45 AC POWER CONTROL APPLICATIONS Unit: mm Repetitive Peak Off−State Voltage: VDRM = 400V, 600V R.M.S On−State Current: IT RMS = 3A High Commutating (dv / dt) MAXIMUM RATINGS

F3J48

Abstract: F3G48 SF3G48 SF3J48 USF3G48 USF3J48 TOSHIBA Thyristor
Contextual Info: SF3G48, SF3J48, USF3G48, USF3J48 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF3G48, SF3J48, USF3G48, USF3J48 MEDIUM POWER CONTROL APPLICATIONS Repetitive Peak Off−State Voltage: VDRM = 400V,600V Repetitive Peak Reverse Voltage: VRRM = 400V,600V Average On−State Current: IT AV = 3A

Thyristor t0202

Abstract: VGT200
Contextual Info: Ordering number : EN1876C _ D T B 3 N0.1876C F Silicon Diffused Junction Type 3.0A Bidirectional Thyristor Features •Glass passivation for high reliability •Peak OFF-state voltage : 100 to 600V •R M S ON-state current: 3A ■TO-202 package

SF3JZ47

Abstract: SF3GZ47 SF3JZ47
Contextual Info: SF3GZ47,SF3JZ47 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF3GZ47,SF3JZ47 Unit: mm MEDIUM POWER CONTROL APPLICATIONS l Repetitive Peak Off−State Voltage : VDRM = 400, 600V Repetitive Peak Reverse Voltage : VRRM = 400, 600V l Average On−State Current : IT AV = 3A

thyristor guide

Abstract: M3G45 M3J45 SM3G45 SM3J45 m3j4
Contextual Info: SM3G45,SM3J45 TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM3G45,SM3J45 AC POWER CONTROL APPLICATIONS Unit: mm Repetitive Peak Off−State Voltage : VDRM = 400, 600V R.M.S ON−State Current : IT RMS = 3A High Commutating (dv / dt) MAXIMUM RATINGS

m3gz47

Abstract: M3JZ47
Contextual Info: SM3GZ47, SM3JZ47 TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM3GZ47, SM3JZ47 AC POWER CONTROL APPLICATIONS Unit: mm z Repetitive Peak Off−State Voltage: VDRM = 400V, 600V z R.M.S On−State Current: IT RMS = 3A z High Commutating (dv / dt)

M3G45

Abstract: m3j4 M3J45 TOSHIBA TRIODE TOSHIBA THYRISTOR SM3J45 thyristor handbook design
Contextual Info: SM3G45, SM3J45 TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM3G45, SM3J45 AC POWER CONTROL APPLICATIONS Unit: mm z Repetitive Peak Off−State Voltage: VDRM = 400V, 600V z R.M.S On−State Current: IT RMS = 3A z High Commutating (dv / dt)