THS 106 Search Results

W3743ZC400-500

Abstract: W6262 westcode diodes sw06 W2958NC280-350 100A249 W6262ZC120-240 SW40-50CXC815 w2052NC300 SW16-24CXC380 SW04-15CXC400
Contextual Info: Old Part Number PDF Data Sheet Available RECTIFIER DEVICE - Rectifier Diodes - Capsule Types VDRM VRRM Range IF AV @ THS IF(RMS) @ IF @ THS 55oC THS 25oC 25oC IFSM(1) 10ms VR ≤ 60% VRRM IFSM(1) 10ms VR ≤ 10V I2t(2) 10ms IRRM @ Tj Max. Vo r @ Tj Max. Vo

Contextual Info: Fast Recovery D iodes ~ Capsule types Type ^F AV Range T ns55°C ^F(RMS) Ths 25°C IF Ths 25°C Typica I Reverse Recovered Charge and Typi :al Reverse Recovery W Tj Max. (50% Chord) I fSM(1) 10ms V r< 6 0 % ^RRM (Note 3) 10 Qra trr ^FM di/dt SMxCXClOO (V)

SD800C24L

Abstract: SD1100C24C br27
Contextual Info: International IM ] Rectifier Diodes Standard Recovery 700-1180 Amps lF A V @ THS (1) Part Number Vr r m (V) SD400C02C SD400C04C SD400C06C SD400C08C SD400C10C SD400C12C SD400C14C SD400C16C SD400C18C SD400C20C SD400C22C SD400C24C 200 400 600 800 1000 1200

vicor module

Contextual Info: VICOR CONFIDENTIAL THS DOCUMENT AND THE DATA DISCLOSED HEREN OR HEREWITH IS NOT TO BE REPRODUCED. USED. OR DISCLOSED N WHOLE OR N PART TO ANYONE WITHOUT PERMISSION OF VICOR CORP. REV. »1 P/N 10692-01 DESCRPTION DATE DRAWN FOR DEVELOPMENT APPROVED CFH L2 .25

Contextual Info: O S M S N IA * » " • * * » This ssrlst of oabls damp attachment oonneotora la ths oommsrolal attsmata to the 8MA type oonneotora to ftaodble oable per MIL-C-3Q012 Category A Field Replaceable units (no speolal toola required). Flexible Cable • Clamp Attachment

DP130

Abstract: ASTEC MVD4014-2 ASTEC DC-DC dp11-030 DP11-030-5 DP12-020-5 DP13-016-5 DP19-020-5 MVD3017-2
Contextual Info: ASTEC MbE D STANDARD POUIER • 1013122 O OOGb lb THS ■ PUR M V Series 2.4 Watts Single/Dual Outputs DC/DC Converters ASTEC T -5 1 -1 V The MV Series is ideally suited for high density PC board applications, where real estate is at a premium. Applications

r1448

Abstract: R216SH10-12 R1863CH R185SH10-12 R0633YS R355SH R270S R500CH20-28 R216SH R600CH18-21
Contextual Info: Old Part Number PDF Data Sheet Available FAST SWITCHING DEVICE -Distributed Gate Thyristors - Capsule Type VDRM VRRM Range New Part Number Tq 200V/µ µs ITav Ths Note 3 Sine Wave Typical (V) (µ µ s) (A) diT/dt Rep/Non-Rep o ITRM (A) 50% Duty Cycle TSINK 55 C

E01D

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER SML-LXR85GC-TR CAUTION: MOISTURE SENSITIVE DEVICE 1 . SHELF U FE IN SEALED BAG: 12 MONTHS AT <4<TC AND <9D% RELATIVE HLMDTTY RH . 2 . AFTER THS BAG IS OPENED, CEVCES HAVE TQ BE MOUNTED WITHN 4B HQUfC OR STORED AT <30S RH.

SML-LXR85SYC-TR

Contextual Info: UNCONTROLLED DOCUMENT 3.20 CO.126] PART REV. 1. SHELF LIFE IN SEALED BAG: 12 MONTHS AT <4<TC AND <90% RELATIVE HLMDITY RH , 2 . AFTER THS BAG IS OPENED, DEVICES HAVE TO BE is MOUNTED WITHN 4B HOURS OR STORED AT < X Z RH. CATHODE MARK E .C .N . NUM BER AND

p029

Abstract: p0273sp12 P440-C P0327WC12 P0330 P202CH12 P1007LS P0515WC P215PH06-08 P202PH12
Contextual Info: Old Part Number PDF Data sheet Available FAST SWITCHING DEVICE - Fast Turn Off Thyristors - Capsule Type New Part Number IT @ 55oC IT RMS @ 25oC (A) (A) VDRM VRRM Range Turn-off Time Tq at 200/Vµ µs ITAV Ths Note 3 Note 4 (V) (µ µ s) NonQra 50% Chord di/dt

OPA104CM

Abstract: opa104 OPA104AM A104
Contextual Info: BURR-BROW N CORP S2E D • 17313bS 001b3T3 3 ■ T-THS BU R R -B R O W N 0 P A 1Q4 c Ultra-Low Bias Current Low Drift FET Input OPERATIONAL AMPLIFIER c FEATURES APPLICATIONS • SPECIFICATIONS GUARANTEED OVER TEM PERATURE • CURRENT TO VOLTAGE CONVERSION

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER SML-LXR8 5 IC-TR CAUTION: MOISTURE SENSITIVE DEVICE 1. SHELF UFE IN SEALED BAG: 12 MONTHS AT <4<TC AND <9D% RELATIVE HLMDTTY RH . 2. AFTER THS BAG IS OPENED, CEVCES HAVE TQ BE REV, A B C □ E F G H MOUNTED WITHN 4B HQUfC OR STORED AT < 3 0 S RH.

P205GH

Abstract: 4H140 p280ch
Contextual Info: Fast T urn-off Thyristors ~ Capsule types Type ^DRM Vv R R M J-TAV Ths 55°C ^ T R M S @ IT @ I t S M ( 1) • ^ TSM (Z) Range Time Tq at 200V/|JS (Note 3) (Tables 3,4) (V) (MS) (A) (A) (A) (A) (A) P080CH 200-1400 25-40 (2) 175 350 290 1500 1650 P086CH

transistor BC 584

Abstract: BC 584 prince 980nm VCSEL princeton AA64-BC-SM-W0975
Contextual Info: Addressable VCSEL Array Part # AA64-BC-SM-W0975 • 8 x 8 individually addressable array 64 channels • Vertical-Cavity Surface-Emitting Laser technology • >3mW single-fundamental-mode power at 980nm • High-power, multimode version also available • Custom wavelengths available (808-1064nm)

mc161

Contextual Info: UNCONTROLLED DOCUMENT PART NUM BER S M L - L X R 8 5 1 G C -T R 0.50 CO.020] <2 P L S. □ REV. E .C .N . N U M BER AND A E .C .N . # 10644. REV ISIO N PARAMETER MIN CO M M ENTS D ATE 7 .1 8 .0 0 TYP PEAK WAVELENGTH 2 ,00 [0 ,0 7 9 ] H 2,00 [ 0 ,0 7 9 ] OÉ

Tektronix* A622 probe

Abstract: Tektronix A622 probe A622 P5102 Tektronix 206006000 PROBE sony kv P6117 ASEA
Contextual Info: High Voltage Passive Probe P5102 Features P5102 • 1000 V Maximum Input Voltage • 100 MHz Bandwidth • 5 MΩ Input Resistance • Stable Adjustments for Accurate and Reliable Measurements • Rugged Probe Head and Accessories for Harsh Environments • UL 3111-1 Certified for 1000 V AC RMS

PHX5N50

Abstract: smps 12 volt 3 amp PHP8N50 PHX4N60
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in an isolated plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast

BU4508AF

Abstract: transistor BU4508AF
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BU4508AF Silicon Diffused Power Transistor Product specification Supersedes data of January 1998 File under Discrete Semiconductors, SC06 June 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor

ABB Semiconductors

Contextual Info: VCE IC = = 1700 V 225 A IGBT Module LoPak5 SPT 5SNS 0225U170100 MARKETING INFORMATION • • • • • Doc. No. 5SYA1534-00 Sep. 01 Low-loss, rugged IGBT SPT chip-set EMC friendly diode with positive temp. coefficient of on-state Low profile compact baseless

IGBT abb datasheets

Abstract: IGBT abb
Contextual Info: VCE IC = = 1700 V 225 A IGBT Module LoPak5 SPT 5SNS 0225U172100 MARKETING INFORMATION • • • • • • Doc. No. 5SYA1537-00 Sep. 01 Low-loss, rugged IGBT SPT chip-set EMC friendly diode with positive temp. coefficient of on-state Low profile compact baseless

Contextual Info: VCE IC = = 1700 V 150 A IGBT Module LoPak4 SPT 5SNS 0150V170100 MARKETING INFORMATION • • • • • Doc. No. 5SYA1532-00 Sep. 01 Low-loss, rugged IGBT SPT chip-set EMC friendly diode with positive temp. coefficient of on-state Low profile compact baseless

Contextual Info: VCE IC = = 1700 V 150 A IGBT Module LoPak4 SPT 5SNS 0150V172100 MARKETING INFORMATION • • • • • • Doc. No. 5SYA1536-00 May. 01 Low-loss, rugged IGBT SPT chip-set EMC friendly diode with positive temp. coefficient of on-state Low profile compact baseless

Contextual Info: VCE IC = = 1700 V 225 A IGBT Module LoPak5 SPT 5SNS 0225U172100 MARKETING INFORMATION • • • • • • Doc. No. 5SYA1537-00 May. 01 Low-loss, rugged IGBT SPT chip-set EMC friendly diode with positive temp. coefficient of on-state Low profile compact baseless

BU1508AX

Abstract: transistor bu1508ax
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1508AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional