THREE PHASE FULL BRIDGE 100 A Search Results

10 DC IR Bridge

Abstract: 10 amp 3 phase rectifier piv bridge rectifier
Contextual Info: Single Phase Full Wave Bridge Rectifier Assemblies Web Site Template Page 1 of 2 3 Phase Bridge, Three Phase Bridge PART NUMBER:S10A310FR PACKAGE STYLE:410 CONFIGURATION:3 Phase Bridge, Three Phase Bridge DESCRIPTION:100 VOLT, 10 AMP, 250 NANOSECOND 3 Phase Bridge, Three Phase Bridge RECTIFIER

bridge Rectifier piv rating

Abstract: three phase bridge 300 volts bridge rectifier three phase bridge rectifier SINGLE PHASE TO THREE PHASE "three phase bridge rectifier" full wave bridge rectifier dc full three phase bridge s50a310fr
Contextual Info: Single Phase Full Wave Bridge Rectifier Assemblies Web Site Template Page 1 of 2 3 Phase Bridge, Three Phase Bridge PART NUMBER:S50A310FR PACKAGE STYLE:412 CONFIGURATION:3 Phase Bridge, Three Phase Bridge DESCRIPTION:100 VOLT, 50 AMP, 250 NANOSECOND 3 Phase Bridge, Three Phase Bridge RECTIFIER

1.5 AMP BRIDGE RECTIFIER

Abstract: bridge rectifier 15 amp full wave bridge rectifier
Contextual Info: Single Phase Full Wave Bridge Rectifier Assemblies Web Site Template Page 1 of 2 3 Phase Bridge, Three Phase Bridge PART NUMBER:S25A310FR PACKAGE STYLE:404 CONFIGURATION:3 Phase Bridge, Three Phase Bridge DESCRIPTION:100 VOLT, 20 AMP, 250 NANOSECOND 3 Phase Bridge, Three Phase Bridge RECTIFIER

Contextual Info: SBR1004 SBR1004A SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5380, REV. B THREE PHASE FULL WAVE BRIDGE RECTIFIER ASSEMBLY WITH AlSiC TECHNOLOGY. DESCRIPTION: 1000 V, 100 A THREE PHASE BRIDGE RECTIFIER ASSEMBLY. o MAX. RATINGS / ELECTRICAL CHARACTERISTICS

three phase full wave uncontrolled rectifier

Abstract: S10A305HE S10A310HE S10A315HE
Contextual Info: SENSITRON SEMICONDUCTOR S10A305HE S10A310HE S10A315HE TECHNICAL DATA DATA SHEET 1177, REV. - THREE PHASE FULL WAVE BRIDGE RECTIFIER ASSEMBLY DESCRIPTION: A 50/100/150 VOLT, 15 AMP, 30 NANOSECOND THREE PHASE BRIDGE RECTIFIER ASSEMBLY. MAX. RATINGS / ELECTRICAL CHARACTERISTICS

S6A305HE

Abstract: S6A310HE S6A315HE
Contextual Info: S6A305HE S6A310HE S6A315HE SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 1178, REV - THREE PHASE FULL WAVE BRIDGE RECTIFIER ASSEMBLY DESCRIPTION: A 50/100/150 VOLT, 9.0 AMP, 30 NANOSECOND THREE PHASE BRIDGE RECTIFIER ASSEMBLY. MAX. RATINGS / ELECTRICAL CHARACTERISTICS

Contextual Info: SENSITRON SEMICONDUCTOR S10A305HE S10A310HE S10A315HE TECHNICAL DATA DATA SHEET 1177, REV. A THREE PHASE FULL WAVE BRIDGE RECTIFIER ASSEMBLY DESCRIPTION: A 50/100/150 VOLT, 15 AMP, 40 NANOSECOND THREE PHASE BRIDGE RECTIFIER ASSEMBLY. MAX. RATINGS / ELECTRICAL CHARACTERISTICS

S6A305FR

Abstract: S6A310FR S6A320FR S6A340FR S6A360FR
Contextual Info: S6A305FR S6A310FR S6A320FR S6A340FR S6A360FR SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 2010, REV. A THREE PHASE FULL WAVE BRIDGE RECTIFIER ASSEMBLY DESCRIPTION: A 50/100/200/400/600 VOLT, 5.0 AMP, 150 NANOSECOND THREE PHASE BRIDGE RECTIFIER ASSEMBLY.

Contextual Info: S10A305HE S10A310HE S10A315HE SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 1177, REV. C THREE PHASE FULL WAVE BRIDGE RECTIFIER ASSEMBLY DESCRIPTION: A 50/100/150 VOLT, 15 AMP, 40 NANOSECOND THREE PHASE BRIDGE RECTIFIER ASSEMBLY. MAX. RATINGS / ELECTRICAL CHARACTERISTICS

Contextual Info: SENSITRON _ SEMICONDUCTOR SL6360FRL TECHNICAL DATA DATA SHEET 5338, REV - THREE PHASE FULL WAVE ULTRAFAST BRIDGE RECTIFIER ASSEMBLY DESCRIPTION: 600 VOLT, 6 AMP, 180 NANOSECOND THREE PHASE BRIDGE RECTIFIER ASSEMBLY. Note: Add ‘S’ at the end for S-100 Screening

SL6360FRL

Contextual Info: SENSITRON _ SEMICONDUCTOR SL6360FRL TECHNICAL DATA DATA SHEET 5338, REV A THREE PHASE FULL WAVE ULTRAFAST BRIDGE RECTIFIER ASSEMBLY DESCRIPTION: 600 VOLT, 6 AMP, 180 NANOSECOND THREE PHASE BRIDGE RECTIFIER ASSEMBLY. Note: Add ‘S’ at the end for S-100 Screening

Contextual Info: SENSITRON _ SEMICONDUCTOR S25A305HE S25A310HE S25A315HE TECHNICAL DATA DATA SHEET 2012, REV - THREE PHASE FULL WAVE BRIDGE RECTIFIER ASSEMBLY DESCRIPTION: A 50/100/150 VOLT, 25 AMP, 30 NANOSECOND THREE PHASE BRIDGE RECTIFIER ASSEMBLY. o All ratings are at TA = 25 C unless otherwise specified.

R624

Abstract: R632X R628 R618 R604 silicon avalanche integrated bridge rectifiers R631 R602 R622 silicon avalanche integrated bridge rectifiers 15
Contextual Info: IB R SILICON AVALANCHE ^ac|ac]ac INTEGRATED BRIDGE RECTIFIERS • 15 AMP & 36 AMP THREE PHASE, FULL WAVE CASE NEGATIVE ■ Operation to full rated load at 100°C, Tc ■ Controlled Avalanche series with 250V, 450V, 650V & 850V minimum avalanche voltages VBR

100L6P41

Abstract: 100Q6P43 100L6P43 100U6P43 100G6P43 TOSHIBA RECTIFIER 100u6p bth 100 ipm100a 100G6P
Contextual Info: SILICON DIFFUSED TYPE RECTIFIER MODULE 100 G, L,Q,U 6P43 THREE PHASE FULL WAVE BRIDGE APPLICATIONS. Unit in mm FEATURES: . Repetitive Peak Reverse Voltage VRRM=400-1600V . Average Output Rectified Current IO=100A . Isolation Voltage : 100G6P43, 100L6P43 - 2000V AC

Contextual Info: GWM 100-01X1 Three phase full Bridge VDSS = 100 V ID25 = 90 A RDSon typ. = 7.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C Maximum Ratings VGS 100

smd diode g6

Abstract: 160-0055X1 SMD mosfet MARKING code TC smd diode S2 smd diode s1 smd g1 smd diode code SL
Contextual Info: GWM 100-01X1 Three phase full Bridge VDSS = 100 V = 90 A ID25 RDSon typ. = 7.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Symbol Conditions

smd diode code mj

Abstract: SMD marking code 542 smd diode code g6 9 GWM 100-01X1 smd diode code g4 smd marking BL smd diode code s6 welding mosfet smd diode g6 DIODE S4 39 smd diode TR 505 diode
Contextual Info: Advanced Technical Information Three phase full Bridge GWM 100-01X1 VDSS = 100 V ID25 = 90 A RDSon typ. = 7.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C

Contextual Info: GWM 70-01P2 Advanced Technical Information VDSS = 100 V ID25 = 70 A Ω RDSon typ. = 11 mΩ Three phase full bridge with Trench MOSFETs in DCB isolated high current package L+ G3 G5 S3 S5 G1 S1 L1 L2 L3 G4 G6 S4 S6 G2 S2 L- Applications MOSFETs Conditions

Contextual Info: MTI 145WX100GD Three phase full Bridge VDSS = 100 V = 190 A ID25 RDSon typ. = 1.7 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 S2 S4 S6 L1- L2- L3- iv Applications MOSFETs Symbol Conditions Maximum Ratings

DIODE S6 marking code

Abstract: smd diode g6 Diode smd s6 95 marking G3 3x100-01X1 smd diode code S5
Contextual Info: GMM 3x100-01X1 Three phase full Bridge VDSS = 100 V = 90 A ID25 RDSon typ. = 7.5 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings

75WX100GD

Contextual Info: GMM 3x100-01X1 Three phase full Bridge VDSS = 100 V = 90 A ID25 RDSon typ. = 7.5 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings

Contextual Info: VWM 200-01P Advanced Technical Information VDSS = 100 V RDSon = 3.6 m Ω ID25 = 210 A Three phase full bridge with Trench MOSFETs L+ G3 G5 S3 S5 G1 S1 G4 G6 S4 S6 L1 L2 L3 G2 S2 L- MOSFETs Applications Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings

DIODE S4 52

Abstract: IXYS DIODE S4 52 DIODE
Contextual Info: VWM 200-01P Advanced Technical Information VDSS = 100 V Ω RDSon = 3.6 mΩ ID25 = 210 A Three phase full bridge with Trench MOSFETs L+ G3 G5 S3 S5 G1 S1 G4 G6 S4 S6 L1 L2 L3 G2 S2 L- MOSFETs Applications Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings

Diode smd s6 95

Contextual Info: GMM 3x100-01X1 Three phase full Bridge VDSS = 100 V = 90 A ID25 RDSon typ. = 7.5 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings