THOMSON GPS Search Results

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

AM1517-012

Abstract: AM1517-025 SD1888-03 SD1891-03 SD1893-03 SD1894 SD1895-03 SD1897 SD1898 SD1899
Contextual Info: SILICON POWER TRANSISTORS 1.6 GHz SATCOM TRANSISTORS SGS-THOMSON offers a complete product line of high power devices specifically characterized for SATCOM usage in the 1600 - 1700 MHz frequency range for INMARSAT, GPS and other L-Band Satellite applications.

st20 Application CPU

Abstract: ST20
Contextual Info: /= T SCS -THOMSON ^7# M M i n n r a m « ST20-GP1 GPS PROCESSOR ENGI NEERI NG DATA FEATURES • Application specitic features • 12 channel GPS correlation DSP hardware and ST20 CPU tor control and position caluculations on one chip • no TCXO required

MSC1002

Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
Contextual Info: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition

BA 553

Abstract: 41t smd TSH321 smd 41t TSH321I
Contextual Info: SGS-THOMSON TSH321 WIDE BANDWIDTH AND MOS INPUTS SINGLE OPERATIONAL AMPLIFIER • LOW DISTORTION ■ GAIN BANDWIDTH PRODUCT : 300MHz ■ . . ■ GAIN O F 2 STABILITY SLEW RATE : 400V4xs VERY FAST SETTLING TIME : 60ns 0.1 A VER Y HIGH INPUT IMPEDANCE DESCRIPTION:

Contextual Info: rz T SGS-THOMSON SD2920-02 RF MOS FIELD EFFECT TR AN SISTO RS HF/VHF APPLICATIONS • . ■ . . . . . . - 2 - 200 MHz 50 VOLTS IMD - 30dB CLASS AB GOLD METALLIZATION FOR HIGH RELIABILITY DESIGNED FOR LINEAR OPERATION WIDEBAND TUNING SIMPLE BIAS CIRCUITRY COMMON SOURCE CONFIGURATION

Contextual Info: TSD2922 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to

Contextual Info: TSD2900 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to

TSD2903

Contextual Info: TSD2903 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to

Contextual Info: TSD2902 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to

TSD2921

Abstract: SGS-THOMSON SGS-Thomson Transistors
Contextual Info: TSD2921 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to

TSD2921

Contextual Info: TSD2921 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to

TSD2904

Contextual Info: TSD2904 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to

SGS-THOMSON

Abstract: TSD2922 M176
Contextual Info: TSD2922 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to

marine gps antenna

Abstract: Matsua Electric Works electric components aromat matsua
Contextual Info: Marine II GPS Antenna Technical Specification of Standard Type: Total Gain Noise Figure L1 1575.42 ± 1.023 MHz typ 50 Ohm 2.5 (max.) Right hand circular 360 degrees 0 degree to 90 degrees Gain: 3.0 dBi (typ.) -10 dBi min. at 0 degrees elevation Axial ratio: 3 dB (typ.)

Contextual Info: th June 07 2001 page 1/3 rev.1 TMX R651 SAW Bandpass Filter GPS – IF PRELIMINARY SPECIFICATION All performances include Temperature Variations Minimum Typical Maximum Source Impedance balanced Ω - 1000 - Load Impedance (balanced) Ω - 1000 - Operating Temperature Range

rtd pt100 interface to 8051

Abstract: 24V 20A SIEMENS battery charger LM2560 smd 58a transistor 6-pin pic 16f84 PWM circuit scr control light intensity using 8051 8051 microwave oven design of FM transmitter final year project project pic 16f84 pwm "white led" 5mm
Contextual Info: INDEX Order Code Description _ 102-271 794-740 102-246 794-752 101-930 102-283 101-886 101-953 _ _ 688-137 688-149 _ _ 597-387 705-536 473-728 473-753 473-730 473-741 473-881 _ _ _ 690-648 690-703 690-636 791-180 _ 791-805 _ 101-564 101-540 101-552 101-515

TFK diodes BYW 76

Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Contextual Info: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35

Fairchild presentation

Abstract: 80c196 BU 3150 thomson gps 683XX
Contextual Info:  Presentation #1 Brief Overview of Company and Products

 Presentation #1, 9902Awebwsiintro Return to Main Menu    1 

 • Founded in 1983 • Headquarters in Fremont, California Silicon Valley – Sales/Support Offices

T1200B-RC-110

Abstract: T1205A T1203 T1200 JcAir Data 400 arinc 429 T-1202 application notes on ARINC-429 receiver t1201 T1202
Contextual Info: Avionics T1200B ARINC 429 CONTROL DISPLAY UNIT The one test set that covers the entire spectrum of the avionics industry • External 12 inch touch screen display allows main unit to be located away from operation • PS-2 style mouse may be used with or without touch screen

NEC 10F

Abstract: low-noise L-band tuner nec mmic Monolithic Amplifier NEC JAPAN TRANSISTORS 1981 nec book
Contextual Info: just imagine NEC MUL TI MEDI A NESAT PROCESS nan By utilizing the NESAT NEC Silicon Advanced Technology process, NEC realizes low-noise silicon transistors, high-perform ance silicon m onolithic integrated circuits, as well as in the super high-frequency range high reliability.

class d power amplifier schematic

Abstract: home theatre amplifier circuit diagram class d amplifier schematic diagram china mobile phone circuit diagram class d amplifier schematic power amplifier car circuit diagram class d schematics for a PA amplifier class d AUDIO CROSSOVER schematic Wolfson Stereo Class-D Speaker Amplifier 2 speakers 1 crossover amplifier pcb
Contextual Info: Class D Basics What is a Class D Amplifier? A class D amplifier is an efficient form of switching amplifier. It can be up to 90% power efficient, however, it generates more electrical interference than other configurations of amplifier. This kind of amplifier is widely used in all kinds of electronics, including hi-fi and PA

Great Mixed-signal Technologies

Abstract: EH11
Contextual Info: Mixed-signal and power: the next step forward Julian Hayes, VP of Marketing and Applications, Wolfson Microelectronics Introduction The pressure continues for designers of portable appliances to incorporate more high performance multimedia experiences into ever smaller products with longer battery life, and

power amplifier ic ta2040

Abstract: Nokia 6100 LCD TA2040 Transceiver Broadcom 3G RF interfacing 8051 with bluetooth modem Tripath TA2040 AMPLIFIER pixelworks L7205 tft interface with 8051 trw radar ac
Contextual Info: SEMICONDUCTOR TIMES JULY 2000 / 1 JULY 2000 FOCUSED ON EMERGING SEMICONDUCTOR COMPANIES Radar Scope Bay Microsystems Bay Microsystems was recently founded to develop chips. What kind? The company wouldn’t disclose any details to us. One rumor is “high-speed interfaces” whatever