THERMISTOR SG 4 Search Results

M1120

Abstract: weinschel thermistor F1119 bolometer f1120
Contextual Info: Wcinschel Models 1119, 1119H & 1120 100 kHz to 4.2 GHz COAXIAL POWER STANDARDS THERMISTOR MOUNTS MODEL 1119 (FEEDTHROUGH MOUNT) MODEL 1119H (100 mW FEEDTHROUGH MOUNT) NIST Calibrated or Traceable Weinschel Models 1119,1119H, and 1120 Temperature Stabilized Coaxial Power Standards enable precise

1807a

Abstract: bolometer F1119C
Contextual Info: _ We|nsch£l Model Fl 119C lOO kHz to 4.2 GHz Model 1807A o.oi to 18 GHz RF TRANSFER STANDARD Feed-through Models F1119C and 1807A are Thermistor Mount/Power S plitte r com binations (with test port) used as a feedthrough standard for the calibration of terminating

Contextual Info: Datasheet R2A20056BM Lithium-Ion Battery Charger IC with Auto Load Current Distribution R03DS0075EJ0100 Rev. 1.23 Apr 15,2013 Description R2A20056BM is a semiconductor integrated circuit designed for Lithium-ion battery charger control IC. Built-in Input current limitation circuit compliant with USB requirements and dual output system and battery

Contextual Info: Datasheet R2A20057BM Lithium-Ion Battery Switching Charger IC with Auto Load Current Distribution R03DS0069EJ0100 Rev.1.00 Mar 1, 2013 This is a target specification. Some specs are subject to change. Description R2A20057BM is a semiconductor integrated circuit designed for Lithium-ion battery charger control IC.

TH05-3H103F

Abstract: OF IC 7812 cv R2A20057BM R2A200 R03DS0069EJ0050 TH053H103F ADR05H
Contextual Info: Preliminary Datasheet R2A20057BM Lithium-Ion Battery Switching Charger IC with Auto Load Current Distribution R03DS0069EJ0050 Rev.0.50 Dec 10, 2012 This is a target specification. Some specs are subject to change. Description R2A20057BM is a semiconductor integrated circuit designed for Lithium-ion battery charger control IC.

Contextual Info: IMAGE SENSOR CCD area image sensor S7960/S7961-1008 Back-thinned FFT-CCD for high-speed application S7960/S7961-1008 are FFT-CCD area image sensors specifically designed for high speed operation. A high frame rate is attained by employing a wide band width on-chip amplifier. In binning operation, S7960/S7961-1008 can be used as a linear image sensor having a long aperture in the

S7960-1008

Abstract: S7961-1008
Contextual Info: IMAGE SENSOR CCD area image sensor S7960/S7961-1008 Back-thinned FFT-CCD for high-speed application S7960/S7961-1008 are FFT-CCD area image sensors specifically designed for high speed operation. A high frame rate is attained by employing a wide band width on-chip amplifier. In binning operation, S7960/S7961-1008 can be used as a linear image sensor having a long aperture in the

Contextual Info: IMAGE SENSOR CCD area image sensor S7960/S7961-1008 Back-thinned FFT-CCD for high-speed application S7960/S7961-1008 are FFT-CCD area image sensors specifically designed for high speed operation. A high frame rate is attained by employing a wide band width on-chip amplifier. In binning operation, S7960/S7961-1008 can be used as a linear image sensor having a long aperture in the

1008 transistor

Contextual Info: IMAGE SENSOR CCD area image sensor S7960/S7961-1008 Back-thinned FFT-CCD for high-speed application S7960/S7961-1008 are FFT-CCD area image sensors specifically designed for high speed operation. A high frame rate is attained by employing a wide band width on-chip amplifier. In binning operation, S7960/S7961-1008 can be used as a linear image sensor having a long aperture in the

S7171-0909

Abstract: S8844-0909
Contextual Info: IMAGE SENSOR CCD area image sensor S8844-0909 512 x 512 pixels, Back-thinned FFT-CCD S8844-0909 is an FFT-CCD area image sensor developed for measurement of low-light-level. S8844-0909 has a back-thinned structure for detecting light from the backside that allows high sensitivity from UV to near infrared region. S8844-0909 also delivers a wide dynamic range and

Contextual Info: IMAGE SENSOR CCD area image sensor S8844-0909 512 x 512 pixels, Back-thinned FFT-CCD S8844-0909 is an FFT-CCD area image sensor developed for measurement of low-light-level. S8844-0909 has a back-thinned structure for detecting light from the backside that allows high sensitivity from UV to near infrared region. S8844-0909 also delivers a wide dynamic range and

Contextual Info: IMAGE SENSOR CCD area image sensor S8844-0909 512 x 512 pixels, Back-thinned FFT-CCD S8844-0909 is an FFT-CCD area image sensor developed for measurement of low-light-level. S8844-0909 has a back-thinned structure for detecting light from the backside that allows high sensitivity from UV to near infrared region. S8844-0909 also delivers a wide dynamic range and

S7961-1008

Abstract: thermoelectric peltier S7960-1008 cp1h
Contextual Info: IMAGE SENSOR CCD area image sensor S7960/S7961 -1008Z; •■ -.'■ .•“ i Back-thinned FFT-CCDs for high-speed applicatjpS S 7 9 6 0 /S 7 9 6 1 -1 0 0 8 a re F F T -C C D im a ge s e n so rs s p e c ific a lly d e s ig n e d fo r high sp e e d o p e ra tio n . By e m p lo yin g a w id e b and w id th o n -ch ip

Contextual Info: TSF70 Series Compact External Mount with Temperature Sensing Compact design with temperature sensing Available in Nylon, Polypropylene or PPS 25VA & 100VA versions Many variants are UL recognised components File No. E171218 WRAS Approved versions Technical Specification

Contextual Info: IMAGE SENSOR CCD area image sensor S8844-0909 512 x 512 pixels, Back-thinned FFT-CCD S8844-0909 is an FFT-CCD area image sensor developed for measurement of low-light-level. S8844-0909 has a back-thinned structure for detecting light from the backside that allows high sensitivity from UV to near infrared region. S8844-0909 also delivers a wide dynamic range and

Contextual Info: IMAGE SENSOR CCD area image sensor S8844-0909 512 x 512 pixels, Back-thinned FFT-CCD S8844-0909 is an FFT-CCD area image sensor developed for measurement of low-light-level. S8844-0909 has a back-thinned structure for detecting light from the backside that allows high sensitivity from UV to near infrared region. S8844-0909 also delivers a wide dynamic range and

Contextual Info: TSF80 Series 1/2”NPT External Mount with Temperature Sensing Compact design with temperature sensing 1/2”NPT thread for external mount 25VA & 100VA versions Many variants are UL recognised components File No. E171218 WRAS Approved versions Technical Specification

s7172

Contextual Info: IMAGE SENSOR CCD area image sensor S7170-0909, S7171-0909 512 x 512 pixels, Back-thinned FFT-CCD Hamamatsu developed Multi Pin-Phase MPP mode back-thinned FFT- CCDs S7170-0909, S7171-0909 specifically designed for low-light-level detection in scientific applications. S7170-0909, S7171-0909 have sensitivity from the UV to near-IR as well as having low dark current and wide

Contextual Info: TSF40 Series Compact Internal Mount with Temperature Sensing Compact design with temperature sensing Available in Nylon, Polypropylene or PPS 25VA & 100VA versions Many variants are UL recognised components File No. E171218 WRAS Approved versions Technical Specification

Contextual Info: IMAGE SENSOR CCD area image sensor S9972/S9973 series Front-illuminated FFT-CCD, high IR sensitivity S9972/S9973 series are families of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S9972/S9973 series can be used as a linear image sensor having a long aperture in the direction of the device length. This

S9972

Abstract: S9972-1007 S9972-1008 S9973-1007 DNA 1005
Contextual Info: IMAGE SENSOR CCD area image sensor S9972/S9973 series Front-illuminated FFT-CCD, high IR sensitivity S9972/S9973 series are families of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S9972/S9973 series can be used as a linear image sensor having a long aperture in the direction of the device length. This

Contextual Info: IMAGE SENSOR CCD area image sensor S7170-0909, S7171-0909 512 x 512 pixels, Back-thinned FFT-CCD Hamamatsu developed Multi Pin-Phase MPP mode back-thinned FFT- CCDs S7170-0909, S7171-0909 specifically designed for low-light-level detection in scientific applications. S7170-0909, S7171-0909 have sensitivity from the UV to near-IR as well as having low dark current and wide

S7170-0909

Abstract: S7171-0909
Contextual Info: IMAGE SENSOR CCD area image sensor S7170-0909, S7171-0909 512 x 512 pixels, Back-thinned FFT-CCD Hamamatsu developed Multi Pin-Phase MPP mode back-thinned FFT- CCDs S7170-0909, S7171-0909 specifically designed for low-light-level detection in scientific applications. S7170-0909, S7171-0909 have sensitivity from the UV to near-IR as well as having low dark current and wide

Contextual Info: IMAGE SENSOR CCD area image sensor S9970/S9971 series Front-illuminated FFT-CCD S9970/S9971 series are families of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S9970/S9971 series can be used as a linear image sensor having a long aperture in the direction of the device length. This