THE 2002 IS A COMMON BASE TRANSISTOR Search Results

2sc1923

Abstract: 10ID
Contextual Info: ST 2SC1923 NPN Silicon Epitaxial Planar Transistor for high frequency amplifier applications FM, RF, MIX, IF amplifier applications. The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. On special request, these transistors can be

2sC1923 transistor

Abstract: 2sc1923 common base amplifier circuit common emitter amplifier IY TRANSISTOR The 2002 is a COMMON BASE transistor 10ID FEI 30
Contextual Info: ST 2SC1923 NPN Silicon Epitaxial Planar Transistor for high frequency amplifier applications FM, RF, MIX, IF amplifier applications. The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. On special request, these transistors can be

IY TRANSISTOR

Abstract: 2sc1923 2sC1923 transistor 10ID
Contextual Info: ST 2SC1923 NPN Silicon Epitaxial Planar Transistor for high frequency amplifier applications FM, RF, MIX, IF amplifier applications. The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. On special request, these transistors can be

2sC1923 transistor

Abstract: 2sc1923 10ID IY TRANSISTOR
Contextual Info: ST 2SC1923 NPN Silicon Epitaxial Planar Transistor for high frequency amplifier applications FM, RF, MIX, IF amplifier applications. The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. On special request, these transistors can be

UN5213

Abstract: UNR5210 UNR5211 UNR5212 UNR5213 UNR5214 UNR5215 UNR5216 UNR5217 UNR5218
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR521x Series (UN521x Series) Silicon NPN epitaxial planar type (0.425) Unit: mm For digital circuits 0.3+0.1 –0.0 0.15+0.10 –0.05 1.25±0.10 M Di ain sc te

UNR9211G

Abstract: UNR9212G UNR9214G UNR921FG UNR9210G UNR9213G UNR9215G UNR9216G UNR9217G UNR9218G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR921xG Series Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For digital circuits • Package • Costs can be reduced through downsizing of the equipment and

UNR5211G

Abstract: UNR521LG UNR5216G UNR5210G UNR5212G UNR5213G UNR5214G UNR5215G UNR5217G UNR5218G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR521xG Series Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For digital circuits • Package • Costs can be reduced through downsizing of the equipment and

KSC2383

Abstract: tv vertical ic circuit list
Contextual Info: KSC2383 KSC2383 Color TV Audio Output & Color TV Vertical Deflection Output TO-92L 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Small Signal Transistor Arrays UNA0222 (UN222) Silicon PNP epitaxial planar type (3 elements) Silicon NPN epitaxial planar type (3 elements) Unit: mm For motor drives 12° • Absolute Maximum Ratings Ta = 25°C

UNR5210

Abstract: UNR5211 UNR5212 UNR5213 UNR5214 UNR5215 UNR5216 UNR5217 UNR5218 UNR5219
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR521x Series (UN521x Series) Silicon NPN epitaxial planar type (0.425) Unit: mm For digital circuits 0.3+0.1 –0.0 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 0.9+0.2

UNR2210

Abstract: UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR221x Series (UN221x Series) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 5˚ ue pl d in an c se ed lud

UNR2210

Abstract: UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR221x Series (UN221x Series) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Costs can be reduced through downsizing of the equipment and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR921xG Series Silicon NPN epitaxial planar type For digital circuits • Features ■ Package • Costs can be reduced through downsizing of the equipment and

MBL105

Abstract: 7808 voltage regulator 7808 U2
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D379 M3D461 BLF0810-180; BLF0810S-180 Base station LDMOS transistors Preliminary specification 2002 Mar 01 Philips Semiconductors Preliminary specification BLF0810-180; BLF0810S-180 Base station LDMOS transistors FEATURES

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR521xG Series Silicon NPN epitaxial planar type For digital circuits • Features ■ Package • Costs can be reduced through downsizing of the equipment and

UNR9211G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR921xG Series Silicon NPN epitaxial planar type For digital circuits • Features ■ Package • Costs can be reduced through downsizing of the equipment and

top 8901

Abstract: BLF0810-180 BLF0810S-180 7808 voltage regulator MBL10
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET e M3D379 M3D461 BLF0810-180; BLF0810S-180 Base station LDMOS transistors Preliminary specification 2002 Mar 05 Philips Semiconductors Preliminary specification Base station LDMOS transistors BLF0810-180; BLF0810S-180 FEATURES

7808 voltage regulator

Abstract: BLF0810-90 BLF0810S-90 MBL105
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET e M3D379 M3D461 BLF0810-90; BLF0810S-90 Base station LDMOS transistors Preliminary specification 2002 Mar 18 Philips Semiconductors Preliminary specification Base station LDMOS transistors BLF0810-90; BLF0810S-90 FEATURES

UNR2210

Abstract: UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR221x Series (UN221x Series) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Costs can be reduced through downsizing of the equipment and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR511x Series (UN511x Series) Silicon PNP epitaxial planar type (0.425) Unit: mm For digital circuits 0.3+0.1 –0.0 0.15+0.10 –0.05 1.25±0.10 M Di ain sc te

UNR911NG

Abstract: UNR9110G UNR9111G UNR9112G UNR9113G UNR9114G UNR9115G UNR9116G UNR9117G UNR9118G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR911xG Series Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For digital circuits • Package ■ Features ■ Resistance by Part Number

2SC3311A

Abstract: 2SC3354 UP04599
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04599 Silicon NPN epitaxial planar type 0.20+0.05 –0.02 (0.30) 4 5˚ Display at No.1 lead 5˚ 0.10 max. • Basic Part Number 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 (0.20)

NPN SMALL SIGNAL TRANSISTOR

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Small Signal Transistor Arrays UNA0235 Silicon PNP epitaxial planar type (3 elements) Silicon NPN epitaxial planar type (3 elements) Unit: mm For motor drives For small motor drive circuits in general

pt 4115

Abstract: UN4110 UN4111 UN4112 UN4113 UN4114 UNR4110 UNR4111 UNR4112 UNR4113
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR411x Series (UN411x Series) Silicon PNP epitaxial planar type Unit: mm 4.0±0.2 2.0±0.2 • Features 15.6±0.5 ue pl d in an c se ed lud pl vi an m m es si