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    TH58NVG3S0HBAI4 Search Results

    TH58NVG3S0HBAI4 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    TH58NVG3S0HBAI4
    		Toshiba Memory America Integrated Circuits (ICs) - Memory - 8GB SLC NAND 24NM BGA 9X11 3.3V Original PDF 734.67KB
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    TH58NVG3S0HBAI4 Price and Stock

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    KIOXIA TH58NVG3S0HBAI4

    IC FLASH 8GBIT PARALLEL 63TFBGA
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    DigiKey TH58NVG3S0HBAI4 Tray 67 1
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    Avnet Americas TH58NVG3S0HBAI4 Tray 24 Weeks 210
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    Toshiba America Electronic Components TH58NVG3S0HBAI4

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    Bristol Electronics TH58NVG3S0HBAI4 184
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    Quest Components TH58NVG3S0HBAI4 147
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    TH58NVG3S0HBAI4 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    th58nv

    Abstract: TH58N
    Contextual Info: TH58NVG3S0HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 8 GBIT 1G  8 BIT CMOS NAND E PROM DESCRIPTION The TH58NVG3S0HBAI4 is a single 3.3V 8 Gbit (9,126,805,504 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096  256) bytes  64 pages  4096blocks.


    Original     		TH58NVG3S0HBAI4 TH58NVG3S0HBAI4 4096blocks. 4352-byte 2013-09-20C th58nv TH58N PDF