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    TH58BYG3S0HBAI6 Search Results

    TH58BYG3S0HBAI6 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    TH58BYG3S0HBAI6
    		Toshiba Memory America Integrated Circuits (ICs) - Memory - 8GB SLC NAND 24NM BGA 6.5X8 1.8V Original PDF 2.56MB
    SF Impression Pixel

    TH58BYG3S0HBAI6 Price and Stock

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    KIOXIA TH58BYG3S0HBAI6

    IC FLASH 8GBIT 67VFBGA
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    DigiKey TH58BYG3S0HBAI6 Tray
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    Avnet Americas TH58BYG3S0HBAI6 Tray 14 Weeks 338
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    Mouser Electronics TH58BYG3S0HBAI6 120
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    Toshiba America Electronic Components TH58BYG3S0HBAI6

    Memory ICs
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    Vyrian TH58BYG3S0HBAI6 132
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    TH58BYG3S0HBAI6 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: TH58BYG3S0HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 8 GBIT 1G x 8 BIT CMOS NAND E PROM DESCRIPTION The TH58BYG3S0HBAI6 is a single 1.8V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 4096blocks.


    Original     		TH58BYG3S0HBAI6 TH58BYG3S0HBAI6 4096blocks. 4224-byte 4224-bytes 2013-09-20C PDF