TH 9437 Search Results

Contextual Info: 10 3.0- — í \ /h — - m jJ u i| vt Ò LTÌ F ON u — - jJ u Ni - jj u 1 F T| 194371B !j| - J — - ii U 11 i S| u i-n Li 3 r 0.5 to h e lp th e fe e d in g o f th e p a r t in th e a s s e m b ly m a c h in e [f\ = 3 - R E F E R E N C E DIMENSIONS:

gi 9436 diode

Abstract: Thyratron dc to ac inverter gi 9436 gi 9438 diode Thyratron x-ray tube operation CHOKE COMMON rca company RECTIFIER GI DC to AC 3 phase Inverter Circuits
Contextual Info: 7086 XENON THYRATRON F o r c e d - A i r Co oled Hi gh Peak Cu rrent RCA-7086 cooled is TENTATI VE DATA Design a th re e - e Ie ctro d e r fo rced -air xenon t h y r a t r o n ch ara cte ristic, 11-3/4" Overall Length 4-1/2" Diameter Bulb Ne gative-Control Tr io de Type

Contextual Info: MITSUBISHI LSIs MH26636BJ-7, -8, -10 9437184-BIT 262144-WORD BY 36-BIT DYNAMIC RAM DESCRIPTION The M H 2 6 6 3 6 B J is a 2 6 2 1 4 4 -w o rd x 36 b it d y n a m ic R A M . T his is consists o f nine in d u s try standard 2 5 6 K x 4 b it d y n a m ic R A M s in SOJ and one d riv e r in SOP.

Contextual Info: M ITSUBISHI LSIs MH1 M09B0AJ-7,-8/ MH1 M09B0AJA-7,-8 FAST PAGE MODE 9437184-BIT 1048576-WORD BY 9-BIT DYNAMIC RAM DESCRIPTION The MH1 M 0 9 B 0 A J /J A is 1 0 4 8 5 7 6 -w ord x 9 - bit dynamic PIN CONFIGURATION (TOP VIEW) (Single side] RAM. This consists o f tw o industry standard 1M x 4 dynamic

m5m51008afp

Contextual Info: M H1M09AN-85L,-10L,-12L,-15L,-85H,-10H,-12H,-15H / MH1 M09ANZ-85L.-10L,-12L,-15L,-85H,-10H,-12H,-15H 9437184-BIT 1Q48576-WORD BY 9-BIT CMOS STATIC RAM DESCRIPTION The M H1M 09AN/ANZ is 9437184-bit CMOS static • Single 5V power supply RAM organized as 1048576-word by 9-bit. It consists of eight

Contextual Info: MH1 M09B0CJ-7.-8 FAST PAGE MODE 9437184-BIT 1048576-WORD BY 9-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) [Single side] The M H 1M 09B0C J is 1 0 4 8 5 7 6 -w o rd x 9 - b it dynamic RAM and consists o f tw o industry standard 1M x 4 dynamic RAMS

Contextual Info: * ^ - : >o " .o MH25636XJ-8/ MH25636SXJ-8 FAST PAGE MODE 9437184-BIT 262144-WORD BY 36-BIT DYNAMIC RAM DESCRIPTION M H 2 5 6 3 6 X J /S X J is 26 2 1 4 4 -w o rd by 3 6 -b it dynamic RAM PIN CONFIGURATION (TOP VIEW ) [Single side] o module. This consists of two industry standard 256K x 18bit

Contextual Info: blE » I MITSUBISHI MITSUBISHI LSIs b24TflE5 G D 2 0 3 b 3 S7Ô • M I T I H E H O R Y / A S I C MH25636X J,SX J-8,-10 FAST PAGE MODE 9437184-BIT(262144-WORD BY 36-BIT)DYNAMIC RAM DESCRIPTION MH25636XJ, SXJ is 262144-w ord by 3 6 -b it dynamic RAM module. This consists of tw o industry standard 256K x 18bit

IRGC20B60KB

Contextual Info: PD - 94375 IRGC20B60KB Die in Wafer Form Features • • • • • G Benefits • • • • 600V IC nom = 20A VCE(on) typ.=1.82V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on)

1kA IGBT

Abstract: IRGC30B60KB
Contextual Info: PD - 94376 IRGC30B60KB Die in Wafer Form Features • • • • • G Benefits • • • • 600V IC nom = 30A VCE(on) typ.=1.95V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on)

IRGC50B60KB

Abstract: 4kA IGBT
Contextual Info: PD - 94377 IRGC50B60KB Die in Wafer Form Features • • • • • G Benefits • • • • 600V IC nom =50A VCE(on) typ.=2.0V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability

Stanson Technology

Abstract: TH 9437 P channel MOSFET 1A MOSFET 30v sop-8
Contextual Info: P943 7 ST STP 9437 P Channel Enhancement Mode MOSFET - 5.7A DESCRIPTION STP9437 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

Contextual Info: MITSUBISHI LSIs MH25636XJ,SXJ-8,-10 FAST PAGE MODE 9437184-BIT 262144-WORD BY 36-BIT DYNAMIC RAM DESCRIPTION MH25636XJ, SXJ is 2 6 2 1 4 4 -word by 3 6 - bit dynamic RAM module. This consists of two industry standard 256K x 18bit dynamic RAMs in SOJ. The mounting of SOJ on a single in-line package. This

Contextual Info: MITSUBISHI LS Is SRAM MODULE MH1 M09SSP-25,-35,-45 -ÍW S«", a 9437184-BIT (1048576-WORD BY 9-BIT) CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) [Single side] This is consists nine industry 1M x 1bit static RAMs in TSOP. A6 1 2 3 4 A7 5 A8 6

AN-994

Abstract: IRFR120 IRFR3412 IRFU3412 U120 power MOSFET IRF data
Contextual Info: PD - 94373 IRFR3412 IRFU3412 SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Motor Drive l Bridge Converters l All Zero Voltage Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic

Contextual Info: MITSUBISHI LS Is SRAM MODULE M H 1 M 0 9 A N - 8 5 L ,- 1 0 L ,- 1 2 L ,- 1 5 L ,- 8 5 H ,- 1 0 H ,- 1 2 H ,- 1 5 H M H 1 M 0 9 A N Z - 8 5 L ,- 1 0 L r / 1 2 L ,- 1 5 L ,- 8 5 H ,- 1 0 H ,- 1 2 H ,- 1 5 H 9437184-BIT (1048576-WORD BY 9-BIT) CMOS STATIC RAM

F7101

Abstract: IRF7101 IRF7338
Contextual Info: PD - 94372C IRF7338 HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS N-Ch P-Ch 12V -12V RDS on 0.034Ω 0.150Ω P-CHANNEL MOSFET

IRF7338

Abstract: MOSFET N-CHANNEL 60v 60A
Contextual Info: PD - 94372B IRF7338 HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS N-Ch P-Ch 12V -12V RDS on 0.034Ω 0.150Ω P-CHANNEL MOSFET

F7101

Abstract: IRF7101 IRF7338
Contextual Info: PD - 94372A IRF7338 HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 P-CHANNEL MOSFET VDSS N-Ch P-Ch 12V -12V RDS on 0.034Ω 0.150Ω

9437 transistor

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner's Data Sheet MMSF4P01 HD Medium Power Surface Mount Products M otorola Preferred Device TMOS P-Channel Field Effect Transistors S IN G L E T M O S P O W E R FE T M in iM O S ’M d e vice s are an a dva n ce d se rie s o f p o w e r M O S F E Ts

Contextual Info: MITSUBISHI LS Is DRAM MODULE: FAST PAGE MODE DYNAMIC RAM 256K X 36 9 i BIT Max. Type name Access Load memory time Outward dimensions Data sheet W X H X D (mm) page (ns) MH25636XJ-8 M5M44280AJ x 2 80 107.95 X 17.5 X 5 3/14 MH25636SXJ-8 COMMON DATA 4/14 -

Contextual Info: LMH6642EP,LMH6643EP,LMH6644EP LMH6642EP/LMH6643EP/LMH6644EP Enhanced Plastic Low Power, 130MHz, 75mA Rail-to-Rail Output Amplifiers T ex a s In s t r u m e n t s Literature Number: SNOSAA7B t t i o n OBSOLETE LMH6642EP/LMH6643EP/ LMH6644EP a l Sem iconductor

Contextual Info: MITSUBISHI LSIs {DRAM MODULE MH25636XJ-8/ MH25636SXJ-8 FAST PAGE MODE 9437184-BIT 262144-WORD BY 36-BIT)DYNAMIC RAM DESCRIPTION M H 2 5 6 3 6 X J /S X J is 2 6 2 1 4 4 -w o rd by 3 6 -b it dynamic RAM PIN CONFIGURATION (TOP VIEW) [Single side] o module. This consists o f tw o industry standard 256K x 18b it

EZ 0710

Abstract: 4lu4e 234T0 J137 L437 lcd Inverter Delta 13 pin 20PM sharp lcd tv ics sharp lcd panel 20 pin
Contextual Info: 00/06/90 ie:2&;24 SHABP FastFax-> S H A R P 9493612121 1-000-033-9437 C O R P O R A T I O N O S A K A , SPECIFICATION M O D E L NO. : B R A N D N A M E : J A P A N FOR LCD D I S P L A Y 4 L-U 4 E S HARP C U S T O M E R : S. S. C C O U N T R Y ; J. S. A m . , 20,1994