TH 9428 Search Results

Contextual Info: surface mount t 2l CO M PATIBLE Wee DIP LOCIC DELAY LINE # T 2 L FA ST input and output T h e S M F L D L -T T L is o ffe re d in 76 d e la y s fro m 5 to 50 0n s. D elay to le ra n c e s a re m a in ta in e d a s s h o w n in th e a c c o m p a n y in g part

BU9428KV

Abstract: BU9428KV-1 BU9428KV-1-2 TSZ22111-04
Contextual Info: TYPE PRODUCTS SEMICONDUCTOR LSI PAGE B U 9428K V 1/4 Silicon Monolithic integrated circuit USB host MP3 Decoder LSI B U 9428K V Audio products, etc. BU9428KV is MP3 decoder 1C which contains USB host l/F, audio DAC, system controller. •USB2.0 Full Speed host l/F function contained.

betty

Contextual Info: DRAWING NO. 40-9428F-C U S T REVISIONS O FFIC IAL RELEASE Tr 01 Description: H.D. C rim p Pin .Female, 100/Bag Part No: 40-9428F Application: D -Sub Pin& S ockets C rim p Tool: N/A Im pedance: N/A F requency Range: N/A Material: Pin 11-27-09 P hosphor Bronze, Gold plated

IRF19

Abstract: F7101 IRF1902 IRF7101 MS-012AA
Contextual Info: PD - 94282 IRF1902 HEXFET Power MOSFET l l l l Ultra Low On-Resistance N-Channel MOSFET Surface Mount Available in Tape & Reel VDSS ID 85@VGS = 4.5V 170@VGS = 2.7V 4.0A 3.2A 20V Description These N-Channel HEXFET power MOSFETs from International Rectifier utilize advanced processing

Contextual Info: PD - 94282A IRF1902 HEXFET Power MOSFET l l l l Ultra Low On-Resistance N-Channel MOSFET Surface Mount Available in Tape & Reel VDSS ID 85@VGS = 4.5V 170@VGS = 2.7V 4.0A 3.2A 20V Description These N-Channel HEXFET power MOSFETs from International Rectifier utilize advanced processing

IRF1902

Abstract: F7101 IRF7101 MS-012AA 94282A
Contextual Info: PD - 94282A IRF1902 HEXFET Power MOSFET l l l l Ultra Low On-Resistance N-Channel MOSFET Surface Mount Available in Tape & Reel VDSS ID 85@VGS = 4.5V 170@VGS = 2.7V 4.0A 3.2A 20V Description These N-Channel HEXFET power MOSFETs from International Rectifier utilize advanced processing

Contextual Info: m " v " i k u ,:! Dîa light .* i;: 4 used • ■ v: * NOT A VALID PART NUM BER. THIS SHEET IS FOR R EFER E N C E ONLY. A B SO LUTE M A X IM U M RA TING S TA=25“C 3ID*xxxx ' TYPE* LED COLOR 3ID-9408 3ID-9427 3ID-9428 3ID-9498 Green Red Yellow Orange G reen

IRHM597160

Abstract: JANSR2N7550T1 IRHMS593160 IRHMS597160 JANSF2N7550T1
Contextual Info: PD-94283D RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHM597160 JANSR2N7550T1 100V, P-CHANNEL REF: MIL-PRF-19500/713 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) IRHMS597160 100K Rads (Si) 0.05Ω IRHMS593160 300K Rads (Si)

MOSFET IRF 713

Abstract: IRHMS597160 365A pin JANSR2N7550T1 IRHMS593160 JANSF2N7550T1 300Krads
Contextual Info: PD-94283E RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS597160 JANSR2N7550T1 100V, P-CHANNEL REF: MIL-PRF-19500/713 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) IRHMS597160 100K Rads (Si) 0.05Ω IRHMS593160 300K Rads (Si)

Contextual Info: PD-94283C RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS597160 JANSR2N7550T1 100V, P-CHANNEL REF: MIL-PRF-19500/713 R5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHMS597160 100K Rads (Si) 0.05Ω IRHMS593160 300K Rads (Si)

IRHMS593160

Abstract: IRHMS597160 12V 30A voltage regulator
Contextual Info: PD - 94283A RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS597160 100V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHMS597160 100K Rads (Si) RDS(on) 0.05Ω ID -45A* IRHMS593160 300K Rads (Si) 0.05Ω -45A*

Contextual Info: PD-94283E RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS597160 JANSR2N7550T1 100V, P-CHANNEL REF: MIL-PRF-19500/713 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) IRHMS597160 100K Rads (Si) 0.05Ω IRHMS593160 300K Rads (Si)

IRHMS593160

Abstract: IRHMS597160
Contextual Info: PD - 94283B RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS597160 100V, P-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) IRHMS597160 100K Rads (Si) 0.05Ω IRHMS593160 300K Rads (Si) 0.05Ω ID -45A* -45A*

IRHMS597160

Abstract: IRHMS593160
Contextual Info: PD - 94283 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS597160 100V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHMS597160 100K Rads (Si) RDS(on) 0.049Ω ID -45A* IRHMS593160 300K Rads (Si) 0.049Ω -45A*

IRF5NJ6215

Contextual Info: PD - 94284A HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ6215 150V, P-CHANNEL Product Summary Part Number BVDSS IRF5NJ6215 -150V RDS(on) 0.29Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing

IRF5NJ3315

Contextual Info: PD - 94287 HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ3315 150V, N-CHANNEL Product Summary Part Number BVDSS IRF5NJ3315 150V RDS(on) 0.08Ω ID 20A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

IRF5NJ3315

Contextual Info: PD - 94287A HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ3315 150V, N-CHANNEL Product Summary Part Number BVDSS IRF5NJ3315 150V RDS(on) 0.08Ω ID 20A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

Contextual Info: PD - 94284A HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ6215 150V, P-CHANNEL Product Summary Part Number BVDSS IRF5NJ6215 -150V RDS(on) 0.29Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing

IRF5NJ6215

Abstract: 75vds p mosfet
Contextual Info: PD - 94284 HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ6215 150V, P-CHANNEL Product Summary Part Number BVDSS IRF5NJ6215 -150V RDS(on) 0.29Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing

Contextual Info: PD-94287B HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ3315 150V, N-CHANNEL Product Summary Part Number BVDSS IRF5NJ3315 150V RDS(on) 0.08Ω ID 20A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

Contextual Info: PD - 94286A HEXFET POWER MOSFET THRU-HOLE TO-254AA IRF5M3415 150V, N-CHANNEL Product Summary Part Number BVDSS IRF5M3415 150V RDS(on) 0.049Ω ID 35A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

IRF5M3415

Contextual Info: PD - 94286 HEXFET POWER MOSFET THRU-HOLE TO-254AA IRF5M3415 150V, N-CHANNEL Product Summary Part Number BVDSS IRF5M3415 150V RDS(on) 0.049Ω ID 35A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

IRF5M3415

Contextual Info: PD - 94286A HEXFET POWER MOSFET THRU-HOLE TO-254AA IRF5M3415 150V, N-CHANNEL Product Summary Part Number BVDSS IRF5M3415 150V RDS(on) 0.049Ω ID 35A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

IN942

Abstract: IN945 IN945B 1N941 1N945 1N941B temperature-compensated zener 3b zener diode 1N943B MOTOROLA 1N942A
Contextual Info: 6 3 6 7 2 5 5 M O T O R O L A SC D I O D E S /OPTO ïF|b3t,7ESS 007Û0D1 b | ~ .— T V / -/ / 1N941,A,B MOTOROLA thru SEM ICONDUCTOR TECHNICAL DATA 1N945,A,B esig is k M u u M ii TEMPERATURE-COMPENSATED ZENER REFERENCE DIODES TEMPERATURECOMPENSATED SILICON ZENER