TH 1000 Search Results

TH-Q1210-B

Abstract: THOMSON-CSF Power Laser diode power amp 1000w
Contextual Info: TH-Q1210-B / TH-Q1310-B / TH-Q1410-B 600W / 800W / 1000W QUASI-CW STACKED ARRAYS DESCRIPTION TH-Q1X10-B are high optical power laser diode sources. These Products are based upon 10 highly efficient 1cm linear bar arrays which are piled up to form a stack operating in Quasi-CW

Contextual Info: TH THS4521 THS4522 THS4524 S4 521 TH TH S4 S4 524 522 www.ti.com. SBOS458B – DECEMBER 2008 – REVISED MAY 2009

transformer 1MHz 100W

Abstract: QFN-24 THS6214 THS6214IPWP THS6214IPWPR THS6214IRHFR THS6214IRHFT G993 4-16ma ADC INPUT TRANSISTORS 132 GD
Contextual Info: THS6214 TH S6 214 TH S6 21 4 www.ti.com . SBOS431 – MAY 2009

Contextual Info: Thl» docum ent I« th e property of Amphenol Corporation and I« delivered on th e expreej condition th a t R to n o t to be dtodoM d, reproduced o r u n d . In «hol« or In part, for th e m anufacture or sale by anyone o th er than Amphenol Corporation

la 4620

Abstract: la 4440
Contextual Info: Thl» docum ent 1« th e pro pe rty o f Amphenol Corporation and la delivered on th e exproro condition th a t It la n o t to be dladoeed, reproduced o r uaed. In «hole o r ki p a rt, fo r th e m anufactura o r i d * b y onyone o th e r than Amphenol Corporation

2SK43 transistor

Abstract: smd transistor m29 sot343 UXA23465 Motorola transistor smd marking codes walkie-talkie transceiver diagram UXA23476 diode SMD WL sot23 BF862 AM LNA uaf3000 2SK163
Contextual Info: th 1 ed ition 10 th editio n t h 1 e d th i t i o n RF manual 10 edition 10 Application and design manual for RF products TH September 2007 www.nxp.com 2007 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written

pmi op400

Abstract: PMI OP 400 B24DA 86D9-264-6114-7550E1 1N3062 THC1202 THC1202E1C THC1202S6V 40-pin right-angle male connector ttl oscillator
Contextual Info: TH C 1202 Complete High-Speed A/D Converter Features Conversion Rate DC To 10M sps 12-Bit, 10Msps Large-Signal B a n d w id th > 7 0 M H z N o M issing Codes, G uaranteed The TH C 1202 is a com plete 1 2 -b it 10M sps a n a lo g -to digital converter th a t includes all th e c irc u itry required to

th4521

Abstract: SBOS458F VOUTR19
Contextual Info: TH S THS4521 THS4522 THS4524 452 1 TH TH S4 S4 524 522 SBOS458F – DECEMBER 2008 – REVISED SEPTEMBER 2011 www.ti.com VERY LOW POWER, NEGATIVE RAIL INPUT, RAIL-TO-RAIL OUTPUT, FULLY DIFFERENTIAL AMPLIFIER Check for Samples: THS4521, THS4522, THS4524 FEATURES

THS4521

Abstract: THS4524IDBT texas TSSOP-38 TSSOP38 6.2 TH4521
Contextual Info: TH S THS4521 THS4522 THS4524 452 1 TH TH S4 S4 524 522 SBOS458F – DECEMBER 2008 – REVISED SEPTEMBER 2011 www.ti.com VERY LOW POWER, NEGATIVE RAIL INPUT, RAIL-TO-RAIL OUTPUT, FULLY DIFFERENTIAL AMPLIFIER Check for Samples: THS4521, THS4522, THS4524 FEATURES

35T1417-00H

Contextual Info: * UNCONTROLLED DOCUMENT * FOR REFERENCE ONLY STEWARD CORE DIMENSIONS OD ID A A TH 35T1417-000 UNCOATED CORE MM OD 36.00 ID 23.00 TH 10.00 INCHES 1.417 (.906) (.394) ± ± ± MM .51 .51 .25 EPOXY COATING OD 37.27 ID 21.73 TH 11.02 (1.467) (.856) (.434) ±

G993

Abstract: 12v 100w amplifier QFN-24 THS6204 THS6204IPWP THS6204IRHFR THS6204IRHFT
Contextual Info: THS6204 TH S6 204 TH S6 ® 20 4 www.ti.com . SBOS416C – OCTOBER 2007 – REVISED APRIL 2009 Dual-Port, Differential VDSL2 Line Driver Amplifiers

Contextual Info: THS6204 TH S6 204 TH S6 ® 20 4 www.ti.com . SBOS416C – OCTOBER 2007 – REVISED APRIL 2009 Dual-Port, Differential VDSL2 Line Driver Amplifiers

Contextual Info: THS6204 TH S6 204 TH S6 ® 20 4 www.ti.com . SBOS416C – OCTOBER 2007 – REVISED APRIL 2009 Dual-Port, Differential VDSL2 Line Driver Amplifiers

Contextual Info: DS1202, DS1202S DALLAS SEMICONDUCTOR FEATURES DS1202, DS1202S Serial Tim ekeeping Chip PIN ASSIGNMENT • R e a l tim e c lo c k c oun ts s e c o n d s , m in u tes , ho urs, d a te o f th e m o n th , m o n th , d a y o f th e w e e k , a n d y e a r with

MARKING YA SOT-23

Abstract: w56 transistor MARKING YA J3 SOT-23 ZC831 sot-23 marking YA Diode Marking z3 SOT-23 DIODE W7 BZX84C12 BAR99 BAS16
Contextual Info: I FERRANTI T IIsemiconductorsL BAW56 High Speed S w itc h in g D iode Pair C om m on A node DESCRIPTION These devices are intended fo r high speed switching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in th in and th ick fiiim

Contextual Info: Glossary of Terms Ampere E Series of Preferred Values A m e a s u re m e n t unit expressing th e rate o f flo w of electricity. 1 a m p e re is th e a m o u n t o f current th a t w ill flo w th ro u gh 1 o h m o f resistance w h e n C alculated fro m ro u nd ed valu es o f theoretical

superheterodyne

Abstract: TRIODE itl Scans-0017955 potential divider resistor
Contextual Info: KCH 1 KCH 1 T r io J e h e x o d e The K CH 1 is a freqnency-changer for b a tte ry superheterodyne max 48 receivers. I t consists of a com bination of hexode for mixing the input signal w ith th e signal generated b y th e oscillator, an d a triodo for use as th e latter.

CIRCUITS-13

Contextual Info: 9. PRECAUTIONS IN DESIGNING CIRCUITS 9-1 Input Processing 1 Processing of unused gate Inputs of CMOS IC have such a high im pedance th at th e logic level becom es undefined under open conditions. If th e input is a t an interm ediate level, the P-channel and N-channel transistors both tu rn on, and excessive supply cu rren t flows.

S3460

Abstract: S3410 S34100 S34120 S34140 S34160 S3420 S3440 S3480 fm 115
Contextual Info: Silicon Power Rectifier S / R 3 4 Series •. -Æ J_ 3 J J_F_L N o te s: 1. Full th re a d s w ith in 2 1 / 2 th re a d s 2. S ta n d a rd P o la rity : S tu d is C a th o d e R everse P o la rity : S tu d is Anode Microsemi Catalog Number Standard A B

kyx 28

Abstract: 74148 9900A 9900 Panel SBP9900A-1 DEC memory catalogue IC2 Bus Addresses 007C ic 74148 INJECTOR
Contextual Info: SBP 9900A-1 1. INTRODUCTION 1.1 D E S C R IP T IO N Th e SBP 9 9 0 0 A microprocessor is a ruggedized m ono lith ic C entral Processing U n it <CPU fabricated w ith Integrated In jection Logic |2|_ ) technology. Th e SBP 9 9 0 0 A combines th e properties o f l 2 L technology w ith a 16-b it word

aml 10 series

Abstract: Scans-001779
Contextual Info: DAF 40 DAF 4 0 Diode-R.F. pentode battery valve The D A F 40 is a diode-pentode for b a tte ry operation; th e p entode section is designed for R .F . an d I.F . am plification, th e diode section for d etectio n a n d A.G.C. A b a tte ry w ith a nom inal voltage of 1.4 V can be used for th e

Thyratron 2D21

Abstract: 2D21 Thyratron Thyratron 2021 VL958-2 RG2 -relay valve 2D-21 Thyratron+2D21+xenon
Contextual Info: Ref.: 4G/280K Hot-Cathode Gas-Filled Miniature Thyratron Code: 2D2I CV797 Th e 2D21 is a m iniature tetrode-type, inert-gas-filled th yratro n . It is d irectly equivalent to the U .S .A . 2D21 type. CATHODE Indirectly-heated, oxide-coated H eater voltage

SCHEMA DC INVERTER 12 VOLT TO 220

Abstract: 40A Adjustable Power Supply Schematic Diagram lambda LMS 6018 FLUKE 87 iii manual lg tv electronic board schematic lms 6018 20 led VU meter Regulated Power Supply Schematic Diagram Lambda Electronics lms 6008 lambda LMS
Contextual Info: INSTRUCTION MANUAL FOR REGULATED POWER SUPPLIES LLS-6000 SERIES This m anual provides instructions intended fo r th e operation of Lambda pow er supplies, and is n o t to be reproduced w ithout th e w ritten consent of Lam bda Electronics. All inform ation

3G1c

Abstract: CODE 3G
Contextual Info: Ref.: G75/3G Cold-Cathode Voltage-Stabiliser Code: G75/3G CV4030 Th e G75/3G is a gas-filled voltage-stabiliser which has been developed fo r applications w here conditions of vibration and mechanical shock are encountered. Th e valve has tw o anodes which