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    TGC1430GEPU Search Results

    TGC1430GEPU Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TGC1430G-EPU
    TriQuint Semiconductor 20 - 40 GHz X3 Frequency Multiplier Original PDF

    TGC1430GEPU Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Advance Product Information June 29, 2004 20 - 40 GHz X3 Frequency Multiplier TGC1430G-EPU Key Features and Performance • • • • • • • 0.25um pHEMT Technology 20 - 40 GHz Output Frequencies 8.5 - 13.5 GHz Fundamental Frequencies -15 +/- 2dB Conversion Gain


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    TGC1430G-EPU 18dBm 18dBm 18dBm) PDF

    TGC1430G

    Abstract: TGC1430G-EPU
    Contextual Info: Advance Product Information March 2, 2001 20 - 40 GHz X3 Frequency Multiplier TGC1430G-EPU Key Features and Performance • • • • • • • 0.25um pHEMT Technology 20 - 40 GHz Output Frequencies 8.5 - 13.5 GHz Fundamental Frequencies -15 +/- 2dB Conversion Gain


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    TGC1430G-EPU 18dBm 0007-inch TGC1430G TGC1430G-EPU PDF

    TGA2519-SG

    Abstract: HPA Ku TGF4350-EPU HPA41 ic 7435 TGC4401-EPU ku vsat amplifier TGA2512 price tga8658 TGA2519
    Contextual Info: Microwave / Millimeter Wave Products GaAs MMICs and Discretes for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: i n f o - s a l e s @ t q s . c o m


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    AsareavailableforkeybandsacrossDCto100GHz Alldevicesare100% 11GHzCut-OffFreq TGC1430F-EPU TGC1430G-EPU TGC4401-EPU TriQuintSemiconductor5/06 S11/S22 DC-20 DC-18 TGA2519-SG HPA Ku TGF4350-EPU HPA41 ic 7435 TGC4401-EPU ku vsat amplifier TGA2512 price tga8658 TGA2519 PDF

    ka band lna

    Abstract: TGA4820-EPU ka band Limiter HPA Ku diode 142 19C ka Band LNA, mixer TGB2001-EPU HPA-40 ka band power fet ka band space lna
    Contextual Info: Microwave / Millimeter Wave Products GaAs MMICs for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: info-mmw@tqs.com Web: www.triquint.com TriQuint uses proven 0.25µm power pHEMT and 0.15µm LN processes to design MMICs for


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