TGA4815 Search Results

TGA4815 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
TGA4815		TriQuint Semiconductor	10 GB/s Differential Transimpedance Amplifier	Original	PDF	317.26KB	7
TGA4815-EPU		TriQuint Semiconductor	10Gb/s Differential TIA	Original	PDF	195.34KB	7

TGA4815 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TGA4815-EPU Contextual Info: Advance Product Information January 16, 2004 10Gb/s Differential TIA TGA4815-EPU Key Features and Performance • • • • • • • • • Preliminary Measured Performance Bias Conditions: VPOS=3.3V, IPOS=80mA CPD = 0.2 pF RPD = 15 Ohm 78 -3 Differential TZ	Original	10Gb/s TGA4815-EPU 10GHz TGA4815-EPU	PDF
Contextual Info: Advance Product Information November 16, 2004 10Gb/s Differential TIA TGA4815-EPU Key Features and Performance • • • • • • • • • Preliminary Measured Performance Bias Conditions: VPOS=3.3V, IPOS=80mA CPD = 0.2 pF RPD = 15 Ohm 78 -3 Differential TZ	Original	10Gb/s TGA4815-EPU 10GHz OC-192/STM-64 -15cient	PDF
Contextual Info: Advance Product Information August 27, 2003 10Gb/s Differential TIA TGA4815-EPU Key Features and Performance • • • • • • • • • Preliminary Measured Performance Bias Conditions: VPOS=3.3V, IPOS=60mA CPD = 0.2 pF RPD = 15 Ohm 78 -3 Differential TZ	Original	10Gb/s TGA4815-EPU 10GHz OC-192/STM-64	PDF
Contextual Info: Advance Product Information September 23, 2003 10Gb/s Differential TIA TGA4815-EPU Key Features and Performance • • • • • • • • • Preliminary Measured Performance Bias Conditions: VPOS=3.3V, IPOS=80mA CPD = 0.2 pF RPD = 15 Ohm 78 -3 Differential TZ	Original	10Gb/s TGA4815-EPU 10GHz OC-192/STM-64	PDF
TGA4815 Abstract: TRANSIMPEDANCE mmic Contextual Info: Product Data Sheet August 5, 2008 10Gb/s Differential TIA TGA4815 Key Features and Performance • • • • • • • • • Preliminary Measured Performance Bias Conditions: VPOS=3.3V, IPOS=80mA CPD = 0.2 pF RPD = 15 Ohm 78 -3 Differential TZ Non-Inverting Output	Original	10Gb/s TGA4815 10GHz TGA4815 TRANSIMPEDANCE mmic	PDF
TGA2517 Abstract: TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125 Contextual Info: 02/2010 Triquint SEMICONDUCTOR Product Selection Guide 2010 ABOUT TRIQUINT SEMICONDUCTOR ABOUT TRIQUINT SEMICONDUCTOR Corporate Headquarters – Hillsboro, Oregon Corporate Headquarters – Hillsboro, OR Semiconductor is Digital a leading TriQuint TriQuint	Original	cus937 TGA2517 TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125	PDF
TGA2519-SG Abstract: HPA Ku TGF4350-EPU HPA41 ic 7435 TGC4401-EPU ku vsat amplifier TGA2512 price tga8658 TGA2519 Contextual Info: Microwave / Millimeter Wave Products GaAs MMICs and Discretes for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: i n f o - s a l e s @ t q s . c o m	Original	AsareavailableforkeybandsacrossDCto100GHz Alldevicesare100% 11GHzCut-OffFreq TGC1430F-EPU TGC1430G-EPU TGC4401-EPU TriQuintSemiconductor5/06 S11/S22 DC-20 DC-18 TGA2519-SG HPA Ku TGF4350-EPU HPA41 ic 7435 TGC4401-EPU ku vsat amplifier TGA2512 price tga8658 TGA2519	PDF
TGA2517 Abstract: TQP6M9002 TQM7M5013 TGA4943-SL CGB241 TQM6M4003 bt ag402 TGA4956-SM TQM6M4048 TGA9092-SCC Contextual Info: TABLE OF CONTENTS About TriQuint Semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Guide by Market Automotive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4	Original		PDF
ka band lna Abstract: TGA4820-EPU ka band Limiter HPA Ku diode 142 19C ka Band LNA, mixer TGB2001-EPU HPA-40 ka band power fet ka band space lna Contextual Info: Microwave / Millimeter Wave Products GaAs MMICs for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: info-mmw@tqs.com Web: www.triquint.com TriQuint uses proven 0.25µm power pHEMT and 0.15µm LN processes to design MMICs for	Original		PDF