|
TG-100
|
|
Clare
|
HIGH ENERGY SPARK GAP DEVICES |
Original |
PDF
|
198.41KB |
7 |
|
TG100
|
|
High Energy Devices
|
TG Two Electrode Legacy Series - Spark Gaps |
Original |
PDF
|
244.63KB |
6 |
|
TG100
|
|
Unknown
|
Sine Wave Generator |
Scan |
PDF
|
171.66KB |
2 |
|
TG-1000
|
|
Greenlee Textron
|
Thermometers, Test and Measurement, THERMOMETER INFRARED |
Original |
PDF
|
|
1 |
|
TG.10.0113
|
|
Taoglas
|
RF Antennas, RF/IF and RFID, RF ANTENNA |
Original |
PDF
|
|
13 |
|
TG100160B000G
|
|
Amphenol Anytek
|
Connectors, Interconnects - Terminal Blocks - Wire to Board - TERM BLOCK 10POS 45DEG 5MM PCB |
Original |
PDF
|
90.03KB |
|
|
TG100160C000G
|
|
Amphenol Anytek
|
Connectors, Interconnects - Terminal Blocks - Wire to Board - TERM BLOCK 10POS 45DEG 5MM PCB |
Original |
PDF
|
105.35KB |
|
JMTG100P03A
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
P-channel enhancement mode power MOSFET with -30V drain-source voltage, -45A continuous drain current, and RDS(on) less than 9.5mΩ at VGS=-10V, housed in a PDFN5x6-8L package. |
Original |
PDF
|
|
|
|
JMTG100N06D
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
60V, 50A dual N-channel enhancement mode power MOSFET in PDFN5x6-8L-D package with RDS(ON) less than 12.9mΩ at VGS=10V, featuring advanced trench technology, low gate charge, and 100% UIS tested. |
Original |
PDF
|
|
|
|
JMTG100N04A
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
40V, 40A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 10.9m ohm at VGS=10V, available in PDFN5x6-8L package, suitable for load switching, PWM, and power management applications. |
Original |
PDF
|
|
|
|
JMTG100N03A
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
30V, 30A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 9.8m ohm at VGS = 10V, available in PDFN5x6-8L package, suitable for power management and load switching applications. |
Original |
PDF
|
|
|
|
JMTG100N06A
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
60V, 55A, 8.9mΩ N-channel Power Trench MOSFET in PDFN5x6-8L package with low gate charge, 100% UIS tested, suitable for load switch and power management applications. |
Original |
PDF
|
|
|
|
JMTG100C03D
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
N-Channel and P-Channel enhancement mode MOSFET with 30 V drain-source voltage, 12 A continuous drain current for N-Channel, -10 A for P-Channel, low on-resistance, and PDFN5x6-8L-D package. |
Original |
PDF
|
|
|
JMTG100P03A
